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US5783253A
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Method for forming a dielectric film and method for fabricating a capacitor using the same
Assignee: SK Hynix Inc
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Filing: 1997-03-05
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Granted: 1998-07-21
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Expires: 2017-03-05
Abstract
Abstract The present invention provides a method of forming a high strength dielectric film which provides a high dielectric constant for a high density device, and a method of fabricating a capacitor using such a method. The method includes a two step process where one of the steps provides a composition BST layer serving as a nucleation layer. For example, a BST layer having a composition of Ba x Sr 1-x TiO 3 , where X has a range of about 0 to 0.4. Another BST layer having a composition of Ba x Sr 1-x TiO 3 is provided, where X is about 0.5. Such a method provides a high dielectric film with a very smooth surface, compared to conventional methods.
Inventors
- 👤 Jae Sung Roh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:46
CPC Classifications
H; H10; H10D; H10D99/00; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684; C; C23; C23C; C23C16/00; C23C16/02; C23C16/0272; C23C16/029; C23C16/22; C23C16/30; C23C16/40; C23C16/409
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
67 words
A method of forming a dielectric film comprising the steps of: (a) providing a substrate; (b) forming a first barium strontium titanate (BST) dielectric layer on the substrate, the first BST dielectric layer having a first composition; and (c) forming a second BST dielectric layer on the first BST dielectric layer, the second BST dielectric layer having a second composition that is different than the first composition.
Claim 2
Independent Claim
67 words
A method of forming a dielectric film comprising the steps of: (a) providing a substrate; (b) forming a first barium strontium titanate (BST) dielectric layer on the substrate, the first BST dielectric layer having a first composition; and (c) forming a second BST dielectric layer on the first BST dielectric layer, the second BST dielectric layer having a second composition that is different than the first composition.
Claim 3
Dependent Claim
25 words
The method of claim 1, wherein the first composition is Ba x Sr 1-x TiO 3 , where X has a range of about 0˜0.4.
Claim 4
Dependent Claim
25 words
The method of claim 1, wherein the first BST dielectric layer and the second BST dielectric layer are directly deposited using a common MOCVD system.
Claim 5
Dependent Claim
36 words
The method of claim 1, wherein the first BST dielectric layer is formed under a pressure of about 0.1˜10 Torr at a temperature range of about 400˜650 deg. C. to a thickness of about 20˜200 Å.
Claim 6
Dependent Claim
34 words
The method of claim 1, wherein the second BST dielectric layer is formed under a pressure of about 0.1˜10 Torr at a temperature below 650 deg. C. to a thickness of about 300˜1500 Å.
Claim 7
Dependent Claim
22 words
The method of claim 1, wherein the second composition is Ba x Sr 1-x TiO 3 , where X is about 0.5.
Claim 8
Dependent Claim
22 words
The method of claim 1, wherein the first BST dielectric layer and the second BST dielectric layer are continuously deposited in situ.
Claim 9
Independent Claim
111 words
A method of fabricating a capacitor comprising the steps of: (a) forming an insulating film on a substrate; (b) selectively etching the insulating film to expose the substrate to form a contact hole; (c) forming an underside electrode to the exposed contact hole; (d) forming a first barium strontium titanate (BST) dielectric layer on the insulating film and the underside electrode, the first BST dielectric layer having a first composition; (e) forming a second BST dielectric layer on the first BST dielectric layer, the second BST dielectric layer having a second composition that is different than the first composition; and (f) forming an upperside electrode on the second BST dielectric layer.
Claim 10
Independent Claim
111 words
A method of fabricating a capacitor comprising the steps of: (a) forming an insulating film on a substrate; (b) selectively etching the insulating film to expose the substrate to form a contact hole; (c) forming an underside electrode to the exposed contact hole; (d) forming a first barium strontium titanate (BST) dielectric layer on the insulating film and the underside electrode, the first BST dielectric layer having a first composition; (e) forming a second BST dielectric layer on the first BST dielectric layer, the second BST dielectric layer having a second composition that is different than the first composition; and (f) forming an upperside electrode on the second BST dielectric layer.
Claim 11
Dependent Claim
25 words
The method of claim 8, wherein the first composition is Ba x Sr 1-x TiO 3 , where X has a range of about 0˜0.4.
Claim 12
Dependent Claim
22 words
The method of claim 8, wherein the second composition is Ba x Sr 1-x TiO 3 , where X is about 0.5.
Claim 13
Dependent Claim
25 words
The method of claim 8, wherein the first BST dielectric layer and the second BST dielectric layer are directly deposited using a common MOCVD system.
Claim 14
Dependent Claim
22 words
The method of claim 8, wherein the first BST dielectric layer and the second BST dielectric layer are continuously deposited in situ.
Claim 15
Independent Claim
75 words
A method of forming a dielectric film for a capacitor having first and second electrodes, comprising the steps of: forming a nucleation dielectric layer of Ba x Sr 1-X TiO 3 , where X is less than 0.5, on the first electrode; and forming a composition barium strontium titanate (BST) dielectric layer between said nucleation layer and the second electrode, wherein the composition BST dielectric layer has a different composition than the nucleation dielectric layer.
Claim 16
Independent Claim
75 words
A method of forming a dielectric film for a capacitor having first and second electrodes, comprising the steps of: forming a nucleation dielectric layer of Ba x Sr 1-X TiO 3 , where X is less than 0.5, on the first electrode; and forming a composition barium strontium titanate (BST) dielectric layer between said nucleation layer and the second electrode, wherein the composition BST dielectric layer has a different composition than the nucleation dielectric layer.
Claim 17
Dependent Claim
21 words
The method of claim 13, wherein said nucleation dielectric layer is formed under of pressure of about 0.1 to 10 Torr.
Claim 18
Dependent Claim
23 words
The method of claim 14, wherein said nucleation dielectric layer is formed at a temperature range of about 400 to 650 degree Celsius.
Claim 19
Dependent Claim
20 words
The method of claim 13, wherein said nucleation dielectric layer has a thickness of about 20 Å to 200 Å.
Claim 20
Dependent Claim
31 words
The method of claim 13, wherein said composition BST dielectric layer is formed under a pressure of about 0.1 Torr to 10 Torr below a temperature of about 650 degree Celsius.
Claim 21
Dependent Claim
22 words
The method of claim 13, wherein said composition BST dielectric layer has a thickness range of about 300 Å to 1500 Å.
Claim 22
Dependent Claim
27 words
The method of claim 13, wherein said composition BST dielectric layer has a composition of Ba X Sr 1-X TiO 3 , where X is about 0.5.
References Cited (Backward Citations)
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