US5776254A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus for forming thin film by chemical vapor deposition
Assignee: Mitsubishi Electric Corp
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Filing: 1995-12-27
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Granted: 1998-07-07
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Expires: 2015-12-27
Abstract
Abstract A chemical vapor deposition (CVD) apparatus for depositing a thin film on a substrate by CVD has a material container for containing a liquid CVD source material, a material feeder for feeding the liquid CVD source material to a vaporizer for vaporizing the liquid CVD source material, and a reaction chamber for forming the thin film on the substrate using the CVD source material gas. Both the vaporizer and piping between the vaporizer and the reaction chamber are located in a thermostatic box surrounding the reaction chamber. Thus, the structure of the apparatus is simplified and also the heat efficiency of the apparatus is improved.
Inventors
- 👤 Akimasa Yuuki
- 👤 Takaaki Kawahara
- 👤 Tetsuro Makita
- 👤 Mikio Yamamuka
- 👤 Koichi Ono
- 👤 Tomonori Okudaira
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:25
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/409; C23C16/44; C23C16/448; C23C16/4481; C23C16/52; C23C16/54
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
166 words
An apparatus for depositing a thin film on a substrate by chemical vapor deposition (CVD) comprising: material containing means for containing a liquid CVD source material; material feeding means for feeding the liquid CVD source material from said material containing means to a vaporizer while keeping the CVD source material liquid, a vaporizer for vaporizing the liquid CVD source material fed from said material feeding means by heating the liquid CVD source material to a high temperature to form a CVD source material gas; and a reaction chamber connected to said vaporizer bv a pipe for forming a thin film on a substrate using the CVD source material gas, wherein said reaction chamber includes means for moving the substrate, a plurality of gas heads, and a plurality of lamp heaters for heating substrate to form a thin film on the substrate, said gas heads being arranged in a line and connected for controlling material ejecting rate independently, and said lamp heaters being arranged in a line.
Claim 2
Independent Claim
166 words
An apparatus for depositing a thin film on a substrate by chemical vapor deposition (CVD) comprising: material containing means for containing a liquid CVD source material; material feeding means for feeding the liquid CVD source material from said material containing means to a vaporizer while keeping the CVD source material liquid, a vaporizer for vaporizing the liquid CVD source material fed from said material feeding means by heating the liquid CVD source material to a high temperature to form a CVD source material gas; and a reaction chamber connected to said vaporizer bv a pipe for forming a thin film on a substrate using the CVD source material gas, wherein said reaction chamber includes means for moving the substrate, a plurality of gas heads, and a plurality of lamp heaters for heating substrate to form a thin film on the substrate, said gas heads being arranged in a line and connected for controlling material ejecting rate independently, and said lamp heaters being arranged in a line.
Claim 3
Independent Claim
233 words
An apparatus for depositing a thin film on a substrate by chemical vapor deposition (CVD) comprising: material containing means for containing a liquid CVD source material; material feeding means for feeding the liquid CVD source material from said material containing means to a vaporizer while keeping the CVD source material liquid, a vaporizer for vaporizing the liquid CVD source material fed from said material feeding means by heating the liquid CVD source material to a high temperature to form a CVD source material gas; a reaction chamber connected to said vaporizer by a pipe for forming a thin film on a substrate using the CVD source material gas, wherein said source material containing means contains a liquid CVD source material in a volume of 100 to 3000 cc including a solution selected from the group of titanyl bis (dipivaloylmethanato) (TiO(DPM) 2 ), bis (dipivaloylmethanato) barium (BA(DPM) 2 ), bis (dipivaloylmethanato) strontium (Sr(DPM) 2 ), and titanium tetraisopropoxide (TTIP) dissolved in tetrahydrofuran (THF) in a concentration of 0.01 to 1.0 mol/liter; and said reaction chamber includes means for moving the substrate. a plurality of gas nozzles, and a plurality of lamp heaters for heating the substrate to form a thin film of barium strontium titanate (BST) on the substrate, said gas nozzles being arranged in a line and connected for controlling material ejecting rate independently, and said lamp heaters being arranged in a line.
Claim 4
Independent Claim
233 words
An apparatus for depositing a thin film on a substrate by chemical vapor deposition (CVD) comprising: material containing means for containing a liquid CVD source material; material feeding means for feeding the liquid CVD source material from said material containing means to a vaporizer while keeping the CVD source material liquid, a vaporizer for vaporizing the liquid CVD source material fed from said material feeding means by heating the liquid CVD source material to a high temperature to form a CVD source material gas; a reaction chamber connected to said vaporizer by a pipe for forming a thin film on a substrate using the CVD source material gas, wherein said source material containing means contains a liquid CVD source material in a volume of 100 to 3000 cc including a solution selected from the group of titanyl bis (dipivaloylmethanato) (TiO(DPM) 2 ), bis (dipivaloylmethanato) barium (BA(DPM) 2 ), bis (dipivaloylmethanato) strontium (Sr(DPM) 2 ), and titanium tetraisopropoxide (TTIP) dissolved in tetrahydrofuran (THF) in a concentration of 0.01 to 1.0 mol/liter; and said reaction chamber includes means for moving the substrate. a plurality of gas nozzles, and a plurality of lamp heaters for heating the substrate to form a thin film of barium strontium titanate (BST) on the substrate, said gas nozzles being arranged in a line and connected for controlling material ejecting rate independently, and said lamp heaters being arranged in a line.
References Cited (Backward Citations)
US5204314A
Cited
US5372850A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-07-06 | 2002-01-05 | 2002-07-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-07-06 | 2006-01-05 | 2006-07-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-07-06 | 2010-01-05 | 2010-07-07 | $7700.00 | Window Closed / Lapsed |