Method of forming capacitor for semiconductor device using N2 O gas

Claim 1

A method of forming a capacitor for a semiconductor device on a semiconductor substrate, the method comprising the steps of: forming an oxidized nitride layer on the semiconductor substrate, wherein the oxidized nitride layer includes a first layer and a second layer on the first layer, the second layer having a nitrogen concentration higher than the first layer; forming a first Ta 2 O 5 layer on the oxidized nitride layer: forming a gate electrode on the first Ta 2 O 5 layer; forming an impurity diffused region on portions of the semiconductor substrate at sides of the gate electrode; forming a storage node electrode layer contacting one side of the impurity diffused region; forming a thermal nitride film on the storage node electrode layer; forming a second Ta 2 O 5 layer on the thermal nitride film; and annealing the second Ta 2 O 5 layer using an N 2 O gas.

Claim 2

A method of forming a capacitor for a semiconductor device on a semiconductor substrate, the method comprising the steps of: forming an oxidized nitride layer on the semiconductor substrate, wherein the oxidized nitride layer includes a first layer and a second layer on the first layer, the second layer having a nitrogen concentration higher than the first layer; forming a first Ta 2 O 5 layer on the oxidized nitride layer: forming a gate electrode on the first Ta 2 O 5 layer; forming an impurity diffused region on portions of the semiconductor substrate at sides of the gate electrode; forming a storage node electrode layer contacting one side of the impurity diffused region; forming a thermal nitride film on the storage node electrode layer; forming a second Ta 2 O 5 layer on the thermal nitride film; and annealing the second Ta 2 O 5 layer using an N 2 O gas.

Claim 6

A method of forming a capacitor for a semiconductor device on a semiconductor substrate, the method comprising the steps of: forming an oxidized nitride layer on the semiconductor substrate, wherein the oxidized nitride layer includes a first layer and a second layer on the first layer, the second layer having a nitrogen concentration higher than the first layer; forming a first Ta 2 O 5 layer on the oxidized nitride layer: forming a gate electrode on the first Ta 2 O 5 layer; forming a field oxide film on a first portion of the semiconductor substrate; forming impurity diffused regions on portions other than the first portion of the semiconductor substrate at sides of the gate electrode; forming an insulation film having a hole over one of the impurity diffused regions; forming a storage node electrode layer contacting the one of the impurity diffused regions through the hole; forming a thermal nitride film on the storage node electrode layer; forming a second Ta 2 O 5 layer on the thermal nitride film; and annealing the second Ta 2 O 5 layer using an N 2 O gas.

Claim 7

A method of forming a capacitor for a semiconductor device on a semiconductor substrate, the method comprising the steps of: forming an oxidized nitride layer on the semiconductor substrate, wherein the oxidized nitride layer includes a first layer and a second layer on the first layer, the second layer having a nitrogen concentration higher than the first layer; forming a first Ta 2 O 5 layer on the oxidized nitride layer: forming a gate electrode on the first Ta 2 O 5 layer; forming a field oxide film on a first portion of the semiconductor substrate; forming impurity diffused regions on portions other than the first portion of the semiconductor substrate at sides of the gate electrode; forming an insulation film having a hole over one of the impurity diffused regions; forming a storage node electrode layer contacting the one of the impurity diffused regions through the hole; forming a thermal nitride film on the storage node electrode layer; forming a second Ta 2 O 5 layer on the thermal nitride film; and annealing the second Ta 2 O 5 layer using an N 2 O gas.

Claim 11

A method of forming a capacitor for a semiconductor device on a semiconductor substrate, the method comprising the steps of: forming an oxidized nitride layer on the semiconductor substrate, wherein the oxidized nitride layer includes a first layer and a second layer on the first layer, the second layer having a nitrogen concentration higher than the first layer; forming a first Ta 2 O 5 layer on the oxidized nitride layer: forming a gate electrode on the first Ta 2 O 5 layer; forming an impurity diffused region on portions of the semiconductor substrate at sides of the gate electrode; forming first, second, third insulating layers on the gate electrode including the semiconductor substrate; forming a storage node electrode layer contacting one side of the impurity diffused region; forming a thermal nitride film on the storage node electrode layer; forming a second Ta 2 O 5 layer on the thermal nitride film; and annealing the second Ta 2 O 5 layer using an N 2 O gas.

Claim 12

A method of forming a capacitor for a semiconductor device on a semiconductor substrate, the method comprising the steps of: forming an oxidized nitride layer on the semiconductor substrate, wherein the oxidized nitride layer includes a first layer and a second layer on the first layer, the second layer having a nitrogen concentration higher than the first layer; forming a first Ta 2 O 5 layer on the oxidized nitride layer: forming a gate electrode on the first Ta 2 O 5 layer; forming an impurity diffused region on portions of the semiconductor substrate at sides of the gate electrode; forming first, second, third insulating layers on the gate electrode including the semiconductor substrate; forming a storage node electrode layer contacting one side of the impurity diffused region; forming a thermal nitride film on the storage node electrode layer; forming a second Ta 2 O 5 layer on the thermal nitride film; and annealing the second Ta 2 O 5 layer using an N 2 O gas.

Claim 16

A method of forming a capacitor for a semiconductor device on a semiconductor substrate, the method comprising the steps of: forming an oxidized nitride layer on the semiconductor substrate, wherein the oxidized nitride layer includes a first layer and a second layer on the first layer, the second layer having a nitrogen concentration higher than the first layer; forming a first Ta 2 O 5 layer on the oxidized nitride layer, forming a gate electrode on the first Ta 2 O 5 layer; forming a field oxide film on a first portion of the semiconductor substrate; forming impurity diffused regions on portions other than the first portion of the semiconductor substrate at sides of the gate electrode; forming first, second, third insulating films on the gate electrode and the field oxide film including the semiconductor substrate; the first, second, third insulating layers having a hole over the impurity diffused regions; forming a storage node electrode layer contacting the one of the impurity diffused regions through the hole; forming a thermal nitride film on the storage node electrode layer; forming a second Ta 2 O 5 layer on the thermal nitride film; and annealing the second Ta 2 O 5 layer using an N 2 O gas.

Claim 17

A method of forming a capacitor for a semiconductor device on a semiconductor substrate, the method comprising the steps of: forming an oxidized nitride layer on the semiconductor substrate, wherein the oxidized nitride layer includes a first layer and a second layer on the first layer, the second layer having a nitrogen concentration higher than the first layer; forming a first Ta 2 O 5 layer on the oxidized nitride layer, forming a gate electrode on the first Ta 2 O 5 layer; forming a field oxide film on a first portion of the semiconductor substrate; forming impurity diffused regions on portions other than the first portion of the semiconductor substrate at sides of the gate electrode; forming first, second, third insulating films on the gate electrode and the field oxide film including the semiconductor substrate; the first, second, third insulating layers having a hole over the impurity diffused regions; forming a storage node electrode layer contacting the one of the impurity diffused regions through the hole; forming a thermal nitride film on the storage node electrode layer; forming a second Ta 2 O 5 layer on the thermal nitride film; and annealing the second Ta 2 O 5 layer using an N 2 O gas.