US5763300A
Expired / Lapsed
US
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Method of fabricating microelectronic capacitors having tantalum pentoxide dielectrics and oxygen barriers
Assignee: Mosaid Technologies Inc
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Filing: 1996-09-10
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Granted: 1998-06-09
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Expires: 2016-09-10
Abstract
Abstract A microelectronic capacitor is formed by nitrating the surface of a conducting electrode on a microelectronic substrate. The nitrated surface of the conductive electrode is then oxidized. The nitrating and oxidizing steps collectively form a film of silicon oxynitride on the conductive electrode. A tantalum pentoxide film is then formed on the oxidized and nitrated surface of the conductive electrode. The tantalum pentoxide film may then be thermally treated in the presence of oxygen gas. High performance microelectronic capacitors are thereby provided.
Inventors
- 👤 In-sung Park
- 👤 Kyung-hoon Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 03:27
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10P; H10P14/00; H10P14/60
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
51 words
A method of fabricating a microelectronic capacitor comprising the steps of: forming a silicon oxynitride film on a conductive electrode on a microelectronic substrate; and forming a tantalum pentoxide film on the silicon oxynitride film, the tantalum pentoxide film being spaced apart from the conductive electrode by the silicon oxynitride film.
Claim 2
Independent Claim
51 words
A method of fabricating a microelectronic capacitor comprising the steps of: forming a silicon oxynitride film on a conductive electrode on a microelectronic substrate; and forming a tantalum pentoxide film on the silicon oxynitride film, the tantalum pentoxide film being spaced apart from the conductive electrode by the silicon oxynitride film.
Claim 3
Dependent Claim
33 words
A method according to claim 1 wherein said step of forming a tantalum pentoxide film is followed by the step of: thermally treating the tantalum pentoxide film in the presence of oxygen gas.
Claim 4
Dependent Claim
29 words
A method according to claim 1 wherein said tantalum pentoxide film forming step is followed by the step of forming a second conductive electrode on the tantalum pentoxide film.
Claim 5
Dependent Claim
29 words
A method according to claim 2 wherein said thermally treating step is followed by the step of forming a second conductive electrode on the thermally treated tantalum pentoxide film.
Claim 6
Independent Claim
46 words
A method of fabricating a microelectronic capacitor comprising the steps of: nitrating the surface of a conductive electrode on a microelectronic substrate; oxidizing the nitrated surface of the conductive electrode; and forming a tantalum pentoxide film on the oxidized and nitrated surface of the conductive electrode.
Claim 7
Independent Claim
46 words
A method of fabricating a microelectronic capacitor comprising the steps of: nitrating the surface of a conductive electrode on a microelectronic substrate; oxidizing the nitrated surface of the conductive electrode; and forming a tantalum pentoxide film on the oxidized and nitrated surface of the conductive electrode.
Claim 8
Dependent Claim
25 words
A method according to claim 5 wherein said nitrating step and said oxidizing step collectively form a film of silicon oxynitride on the conductive electrode.
Claim 9
Dependent Claim
33 words
A method according to claim 5 wherein said step of forming a tantalum pentoxide film is followed by the step of: thermally treating the tantalum pentoxide film in the presence of oxygen gas.
Claim 10
Dependent Claim
29 words
A method according to claim 5 wherein said tantalum pentoxide film forming step is followed by the step of forming a second conductive electrode on the tantalum pentoxide film.
Claim 11
Dependent Claim
29 words
A method according to claim 7 wherein said thermally treating step is followed by the step of forming a second conductive electrode on the thermally treated tantalum pentoxide film.
Claim 12
Dependent Claim
18 words
A method according to claim 5 wherein said nitrating step is performed in a rapid thermal processing furnace.
Claim 13
Dependent Claim
32 words
A method according to claim 5 wherein said nitrating step is performed at temperatures between about 800° C. and about 900° C. for times between about 10 seconds and about 200 seconds.
Claim 14
Dependent Claim
30 words
A method according to claim 5 wherein the following step is performed between said steps of nitrating and oxidizing: transferring the nitrated microelectronic substrate to an oxidizing station under vacuum.
Claim 15
Dependent Claim
28 words
A method according to claim 5 wherein the following step is performed between said steps of nitrating and oxidizing: performing a nitrogen purge on the nitrated microelectronic substrate.
Claim 16
Dependent Claim
27 words
A method according to claim 5 wherein said nitrating step is performed using at least one of NH 3 , N 2 O and N 2 gasses.
Claim 17
Dependent Claim
20 words
A method according to claim 7 wherein said step of thermally treating is performed in a rapid thermal processing furnace.
Claim 18
Dependent Claim
31 words
A method according to claim 5 wherein said nitrating step is preceded by the step of: transferring the microelectronic substrate having a conductive electrode thereon to a nitrating station under vacuum.
Claim 19
Dependent Claim
26 words
A method according to claim 5 wherein the following step is performed prior to said step of nitrating: performing a nitrogen purge on the microelectronic substrate.
Claim 20
Dependent Claim
33 words
A method according to claim 7 wherein said thermally treating step is performed at temperatures between about 800° C. and about 900° C. for times between about 10 seconds and about 200 seconds.
References Cited (Backward Citations)
US5452178A
Cited
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| 3.5 Years (Year 4) | 2001-06-08 | 2001-12-08 | 2002-06-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-06-08 | 2005-12-08 | 2006-06-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-06-08 | 2009-12-08 | 2010-06-09 | $7700.00 | Window Closed / Lapsed |