US5459635A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Laminated thin film capacitor and method for producing the same
Assignee: Panasonic Holdings Corp
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Filing: 1994-03-22
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Granted: 1995-10-17
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Expires: 2014-03-22
Abstract
Abstract A laminated thin film capacitor having a substrate, at least two electrode layers, at least one dielectric layer and a pair of external electrode which are placed on respective side walls of the capacitor, wherein the metal electrode layer and the dielectric layers are laminated alternately on the substrate, and every other metal electrode layers are exposed on each of side walls of the capacitor, which capacitor is excellent in dielectric properties such as a high capacity per unit volume.
Inventors
- 👤 Atsushi Tomozawa
- 👤 Eiji Fujii
- 👤 Hideo Torii
- 👤 Masumi Hattori
- 👤 Satoru Fujii
- 👤 Ryoichi Takayama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:36
CPC Classifications
H; H01; H01G; H01G4/00; H01G4/30; H01G4/306
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
124 words
A laminated thin film capacitor comprising a substrate, at least two metal electrode layers, at least one dielectric crystal layer having a crystal axis, which is formed by a plasma CVD method and the crystal axis of which is oriented in a direction perpendicular to the plane of said metal electrode layers and in the (100) plane, and a pair of external electrodes which are placed on respective side walls of said capacitor, wherein said metal electrode layers and said at least one dielectric layer are laminated alternately on said substrate, and edge surfaces of every other metal electrode layer is exposed on each of the side walls of said capacitor at least one of said substrate and said electrodes having a non-(100) orientation.
Claim 2
Dependent Claim
124 words
A laminated thin film capacitor comprising a substrate, at least two metal electrode layers, at least one dielectric crystal layer having a crystal axis, which is formed by a plasma CVD method and the crystal axis of which is oriented in a direction perpendicular to the plane of said metal electrode layers and in the (100) plane, and a pair of external electrodes which are placed on respective side walls of said capacitor, wherein said metal electrode layers and said at least one dielectric layer are laminated alternately on said substrate, and edge surfaces of every other metal electrode layer is exposed on each of the side walls of said capacitor at least one of said substrate and said electrodes having a non-(100) orientation.
Claim 3
Dependent Claim
24 words
The laminated thin film capacitor according to claim 1, wherein said dielectric layer consists of (Ba,Sr)TiO 3 having a cubic system perovskite crystal structure.
Claim 4
Dependent Claim
31 words
The laminated thin film capacitor according to claim 1, wherein said (Ba,Sr)TiO 3 has a composition of (Ba 1-x Sr x )TiO 3 in which x is from 0 to 1.0.
Claim 5
Dependent Claim
41 words
The laminated thin film capacitor according to claim 2, wherein said cubic system perovskite crystal structure has an a axis which is oriented in a direction perpendicular to the plane of said metal electrode layers and is in the (100) plane.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-10-16 | 1999-04-17 | 1999-10-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-10-16 | 2003-04-17 | 2003-10-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-10-16 | 2007-04-17 | 2007-10-17 | $7700.00 | Window Closed / Lapsed |