Miniature, multiple layer, side mounting high frequency blocking capacitor

Claim 1

A miniature, high frequency blocking capacitor, comprising: a block of dielectric material having at least one flat side; a multiplicity of spaced, thin, flat electrodes in said block disposed perpendicular to said one side, with each of said electrodes having a flat body which is comprised of two coplanar segments separated by a gap; an electrically conductive layer applied to said one side of said block; said block having a groove formed therein at said one side dividing said layer into separate, spaced, coplanar sections, each of said electrodes having a tab integral with one of said segments and extending laterally of an coplanar with said body and terminating at said one side for contacting one of said sections of said layer, each one of said sections being adapted for attachment to a differently polarized terminal of an external electric circuit; wherein said portions of a first group of said electrodes contact one of said sections of said layer, and wherein said portions of a second group of said electrodes contact another one of said sections, said electrodes in said first group alternating with said electrodes in said second group across said block; and whereby inductance of said capacitor between said sections of said layer is minimized, so that the minimum frequency of parallel resonance of said capacitor is approximately three times the series resonant frequency of the capacitor, to maximize the blocking effect upon high frequency currents at said parallel resonant frequency.

Claim 8

A method of fabricating a miniature capacitor comprising the steps of: applying a thin, flat, rectangularly U-shaped conductive layer to a flat dielectric wafer, said layer having long legs and a short bight; cutting said wafer transversely across to form two smaller wafers while dividing said layer at its bight to define two flat electrodes with lateral tabs whose free edges are flush with adjacent edges of said smaller wafers; stacking a plurality of said smaller wafers to form pile; and firing said pile to form a monolithic block.

Claim 9

A method of fabricating a miniature capacitor comprising the steps of: applying a thin, flat, rectangularly U-shaped conductive layer to a flat dielectric wafer, said layer having long legs and a short bight; cutting said wafer transversely across to form two smaller wafers while dividing said layer at its bight to define two flat electrodes with lateral tabs whose free edges are flush with adjacent edges of said smaller wafers; stacking a plurality of said smaller wafers to form pile; and firing said pile to form a monolithic block.