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US5459635A Expired / Lapsed US ⏱️ 0.0 years remaining

Laminated thin film capacitor and method for producing the same

Assignee: Panasonic Holdings Corp
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Filing: 1994-03-22
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Granted: 1995-10-17
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Expires: 2014-03-22
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Abstract

Abstract A laminated thin film capacitor having a substrate, at least two electrode layers, at least one dielectric layer and a pair of external electrode which are placed on respective side walls of the capacitor, wherein the metal electrode layer and the dielectric layers are laminated alternately on the substrate, and every other metal electrode layers are exposed on each of side walls of the capacitor, which capacitor is excellent in dielectric properties such as a high capacity per unit volume.

Inventors

  • 👤 Atsushi Tomozawa
  • 👤 Eiji Fujii
  • 👤 Hideo Torii
  • 👤 Masumi Hattori
  • 👤 Satoru Fujii
  • 👤 Ryoichi Takayama

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 08:59
CPC Classifications
H; H01; H01G; H01G4/00; H01G4/30; H01G4/306

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 124 words
A laminated thin film capacitor comprising a substrate, at least two metal electrode layers, at least one dielectric crystal layer having a crystal axis, which is formed by a plasma CVD method and the crystal axis of which is oriented in a direction perpendicular to the plane of said metal electrode layers and in the (100) plane, and a pair of external electrodes which are placed on respective side walls of said capacitor, wherein said metal electrode layers and said at least one dielectric layer are laminated alternately on said substrate, and edge surfaces of every other metal electrode layer is exposed on each of the side walls of said capacitor at least one of said substrate and said electrodes having a non-(100) orientation.
Claim 2
Dependent Claim 124 words
A laminated thin film capacitor comprising a substrate, at least two metal electrode layers, at least one dielectric crystal layer having a crystal axis, which is formed by a plasma CVD method and the crystal axis of which is oriented in a direction perpendicular to the plane of said metal electrode layers and in the (100) plane, and a pair of external electrodes which are placed on respective side walls of said capacitor, wherein said metal electrode layers and said at least one dielectric layer are laminated alternately on said substrate, and edge surfaces of every other metal electrode layer is exposed on each of the side walls of said capacitor at least one of said substrate and said electrodes having a non-(100) orientation.
Claim 3
Dependent Claim 24 words
The laminated thin film capacitor according to claim 1, wherein said dielectric layer consists of (Ba,Sr)TiO 3 having a cubic system perovskite crystal structure.
Claim 4
Dependent Claim 31 words
The laminated thin film capacitor according to claim 1, wherein said (Ba,Sr)TiO 3 has a composition of (Ba 1-x Sr x )TiO 3 in which x is from 0 to 1.0.
Claim 5
Dependent Claim 41 words
The laminated thin film capacitor according to claim 2, wherein said cubic system perovskite crystal structure has an a axis which is oriented in a direction perpendicular to the plane of said metal electrode layers and is in the (100) plane.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1998-10-16 1999-04-17 1999-10-17 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2002-10-16 2003-04-17 2003-10-17 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2006-10-16 2007-04-17 2007-10-17 $7700.00 Window Closed / Lapsed

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