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US5350606A Expired / Lapsed US ⏱️ 0.0 years remaining

Single crystal ferroelectric barium titanate films

Assignee: Kanegafuchi Chemical Industry Co Ltd
•
Filing: 1993-06-09
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Granted: 1994-09-27
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Expires: 2013-06-09
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Abstract

Abstract A ferroelectric thin film consisting of a single crystal of BaTiO 3 which has a perovskite structure is produced by a method comprising evaporating Ba and Ti in an atomic ratio of 1:1 from discrete evaporation sources of Ba and Ti to deposit them on a substrate in a vacuum deposition vessel while supplying a small amount of an oxygen gas to the reactor.

Inventors

  • 👤 Toshio Takada
  • 👤 Takahito Terashima
  • 👤 Kenji Iijima
  • 👤 Kazunuki Yamamoto
  • 👤 Kazuto Hirata
  • 👤 Yoshichika Bando

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-03 03:33
CPC Classifications
C; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/16; C30B29/22; C30B29/32

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 78 words
A method for producing a substantially single crystal ferroelectric thin film having a thickness of not larger than 1 μm, which method comprises evaporating Ba and Ti in an atomic ratio of 1:1 from discrete evaporation sources of Ba and Ti to deposit the evaporated Ba and Ti on a substrate in a vacuum deposition vessel while supplying oxygen gas in an amount sufficient to maintain oxygen pressure within the vessel between 10 -5 and 10 -3 Torr.
Claim 2
Independent Claim 78 words
A method for producing a substantially single crystal ferroelectric thin film having a thickness of not larger than 1 μm, which method comprises evaporating Ba and Ti in an atomic ratio of 1:1 from discrete evaporation sources of Ba and Ti to deposit the evaporated Ba and Ti on a substrate in a vacuum deposition vessel while supplying oxygen gas in an amount sufficient to maintain oxygen pressure within the vessel between 10 -5 and 10 -3 Torr.
Claim 3
Dependent Claim 25 words
The method according to claim 1, wherein a plasma is generated during evaporation of Ba and Ti and deposition of BaTiO 3 on the substrate.
Claim 4
Dependent Claim 29 words
The method according to claim 1, wherein said oxygen gas is supplied towards the substrate surface to form an oxygen-containing atmosphere having a relatively high pressure near the substrate.
Claim 5
Dependent Claim 23 words
The method according to claim 1, wherein a single crystal is used as the substrate with its (001) plane forming the substrate surface.
Claim 6
Dependent Claim 23 words
The method according to claim 1, wherein a single crystal is used as the substrate with its (110) plane forming the substrate surface.
Claim 7
Dependent Claim 19 words
The method according to claim 1, wherein the substrate is heated at a temperature not lower than 500° C.
Claim 8
Dependent Claim 18 words
The method according to claim 1, wherein a deposition rate of BaTiO 3 is 4 Å/sec. or less.
Claim 9
Dependent Claim 24 words
The method according to claim 1, wherein the ferroelectric thin film thus produced comprises a single crystal of BaTiO 3 having a perovskite structure.
Claim 10
Dependent Claim 25 words
The method according to claim 6, wherein the ferroelectric thin film thus produced consists of a single crystal of BaTiO 3 having a perovskite structure.

References Cited (Backward Citations)

US2992079A Cited
US3409412A Cited
US3872359A Cited
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US4724038A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1997-09-26 1998-03-28 1998-09-27 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2001-09-26 2002-03-28 2002-09-27 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2005-09-26 2006-03-28 2006-09-27 $7700.00 Window Closed / Lapsed

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