US6967159B2
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Systems and methods for forming refractory metal nitride layers using organic amines
Assignee: Micron Technology Inc
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Filing: 2002-08-28
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Granted: 2005-11-22
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Expires: 2022-08-28
Abstract
Abstract A method of forming (and apparatus for forming) refractory metal nitride layers (including silicon nitride layers), such as a tantalum nitride barrier layer, on a substrate by using an atomic layer deposition process (a vapor deposition process that includes a plurality of deposition cycles) with a refractory metal precursor compound, an organic amine, and an optional silicon precursor compound.
Inventors
- 👤 Brian A. Vaartstra
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:43
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45553; H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69393; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/688
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
160 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a vapor comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom or an organic group, and n is an integer selected to match the valence of the metal M; providing a vapor comprising one or more silicon precursor compounds; providing a vapor comprising one or more organic amines; and directing the vapors comprising the one or more refractory metal precursor compounds, the one or more silicon precursor compounds, and the one or more organic amines to the semiconductor substrate or substrate assembly to form a refractory metal silicon nitride layer on a surface of the semiconductor substrate or substrate assembly using an atomic layer deposition process comprising a plurality of deposition cycles using sequential pulsing of the reactants to separate the reaction components.
Claim 2
Independent Claim
160 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a vapor comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom or an organic group, and n is an integer selected to match the valence of the metal M; providing a vapor comprising one or more silicon precursor compounds; providing a vapor comprising one or more organic amines; and directing the vapors comprising the one or more refractory metal precursor compounds, the one or more silicon precursor compounds, and the one or more organic amines to the semiconductor substrate or substrate assembly to form a refractory metal silicon nitride layer on a surface of the semiconductor substrate or substrate assembly using an atomic layer deposition process comprising a plurality of deposition cycles using sequential pulsing of the reactants to separate the reaction components.
Claim 3
Dependent Claim
23 words
The method of claim 1 wherein each Y is independently selected from the group consisting of halogen atoms, alkoxy groups, and dialkylamino groups.
Claim 4
Dependent Claim
13 words
The method of claim 2 wherein each Y is independently a halogen atom.
Claim 5
Dependent Claim
13 words
The method of claim 1 wherein M is tantalum and n is 5.
Claim 6
Dependent Claim
12 words
The method of claim 4 wherein each Y is a fluorine atom.
Claim 7
Dependent Claim
25 words
The method of claim 1 wherein the organic amine is of the formula NR 3 wherein each R is independently hydrogen or an organic group.
Claim 8
Dependent Claim
13 words
The method of claim 6 wherein the organic amine is a silylated amine.
Claim 9
Dependent Claim
35 words
The method of claim 7 wherein the silylated amine is of the formula H x N(SiR 1 3 ) y wherein y=1–3 and x=3−y, and each R 1 is independently hydrogen or an organic group.
Claim 10
Dependent Claim
35 words
The method of claim 1 wherein the silicon precursor compound is of the formula H x N(SiR 1 3 ) y wherein y=1–3, x=3−y, and each R 1 is independently hydrogen or an organic group.
Claim 11
Dependent Claim
16 words
The method of claim 1 wherein the semiconductor substrate or substrate assembly comprises a silicon-containing surface.
Claim 12
Dependent Claim
20 words
The method of claim 1 wherein the formed layer has a thickness of about 10 Å to about 500 Å.
Claim 13
Dependent Claim
14 words
The method of claim 1 wherein the formed layer is a diffusion barrier layer.
Claim 14
Dependent Claim
19 words
The method of claim 12 further comprising forming an electrode over at least a portion of the barrier layer.
Claim 15
Dependent Claim
19 words
The method of claim 13 further comprising forming a dielectric layer over at least a portion of the electrode.
Claim 16
Dependent Claim
33 words
The method of claim 1 further comprising providing one or more reaction gases other than the organic amines and directing the one or more reaction gases to the semiconductor substrate or substrate assembly.
Claim 17
Dependent Claim
35 words
The method of claim 15 wherein the reaction gas is selected from the group consisting of NH 3 , N 2 H 4 , B 2 H 6 , PH 3 , and combinations thereof.
Claim 18
Independent Claim
149 words
A method of forming a layer on a substrate, the method comprising: providing a substrate; providing a vapor comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom or an organic group, and n is an integer selected to match the valence of the metal M; providing a vapor comprising one or more silicon prescursor compounds; providing a vapor comprising one or more organic amines; and directing the vapors comprising the one or more refractory metal precursor compounds, the one or more silicon precursor compounds, and the one or more organic amines to the substrate to form a refractory metal silicon nitride layer on a surface of the substrate using an atomic layer deposition process comprising a plurality of deposition cyclesusing sequential pulsing of the reactants to separate the reaction components.
Claim 19
Independent Claim
149 words
A method of forming a layer on a substrate, the method comprising: providing a substrate; providing a vapor comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom or an organic group, and n is an integer selected to match the valence of the metal M; providing a vapor comprising one or more silicon prescursor compounds; providing a vapor comprising one or more organic amines; and directing the vapors comprising the one or more refractory metal precursor compounds, the one or more silicon precursor compounds, and the one or more organic amines to the substrate to form a refractory metal silicon nitride layer on a surface of the substrate using an atomic layer deposition process comprising a plurality of deposition cyclesusing sequential pulsing of the reactants to separate the reaction components.
Claim 20
Dependent Claim
23 words
The method of claim 17 wherein each Y is independently selected from the group consisting of halogen atoms, alkoxy groups, and dialkylamino groups.
Claim 21
Dependent Claim
25 words
The method of claim 17 wherein the organic amine is of the formula NR 3 wherein each R is independently hydrogen or an organic group.
Claim 22
Dependent Claim
13 words
The method of claim 17 wherein the organic amine is a silylated amine.
Claim 23
Dependent Claim
35 words
The method of claim 20 wherein the silylated amine is of the formula H x N(SiR 1 3 ) y wherein y=1–3 and x=3−y, and each R 1 is independently hydrogen or an organic group.
Claim 24
Dependent Claim
35 words
The method of claim 17 wherein the silicon precursor compound is of the formula H x N(SiR 1 3 ) y wherein y=1–3, x=3−y, and each R 1 is independently hydrogen or an organic group.
Claim 25
Dependent Claim
33 words
The method of claim 17 further comprising providing one or more reaction gases other than the organic amines and silicon precursor compounds and directing the one or more reaction gases to the substrate.
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