US5576579A
Expired / Lapsed
US
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Tasin oxygen diffusion barrier in multilayer structures
Assignee: GlobalFoundries Inc
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Filing: 1995-01-12
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Granted: 1996-11-19
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Expires: 2015-01-12
Abstract
Abstract A multilayer structure having an oxygen or dopant diffusion barrier fabricated of an electrically conductive, thermally stable material of refractory metal-silicon-nitrogen which is resistant to oxidation, prevents out-diffusion of dopants from silicon and has a wide process window wherein the refractory metal is selected from Ta, W, Nb, V, Ti, Zr, Hf, Cr and Mo.
Inventors
- 👤 Paul D. Agnello
- 👤 Cyril Cabral, Jr.
- 👤 Alfred Grill
- 👤 Christopher V. Jahnes
- 👤 Thomas J. Licata
- 👤 Ronnen A. Roy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:30
CPC Classifications
H; H10; H10P; H10P36/00; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D1/00; H10D1/60; H10D1/62; H10D1/66; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312; H10D64/01344; H10D64/60; H10D64/66; H10D64/661; H10D64/662; H10D64/664; H10D64/665; H10D64/666; H10D64/68; H10D64/681; H10D64/685; H10D64/693; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0172; H10D84/0174; H10D84/0177; H10D84/02; H10D84/03; H10D84/038
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
49 words
A multilayer structure comprising: a conducting base layer having a top surface, and a refractory metal-silicon-nitrogen layer adhered to the top surface of said conducting base layer, said refractory metal-silicon-nitrogen layer comprises alternating sub-layers of refractory metal-nitrogen and silicon-nitrogen each having a thickness of less than about 10 nm.
Claim 2
Dependent Claim
49 words
A multilayer structure comprising: a conducting base layer having a top surface, and a refractory metal-silicon-nitrogen layer adhered to the top surface of said conducting base layer, said refractory metal-silicon-nitrogen layer comprises alternating sub-layers of refractory metal-nitrogen and silicon-nitrogen each having a thickness of less than about 10 nm.
Claim 3
Dependent Claim
24 words
A multilayer structure according to claim 1, wherein said diffusion barrier layer is a sputtered TaSiN consisting of alternating sub-layers of TaN and SiN.
Claim 4
Dependent Claim
50 words
A semiconductor structure comprising a conducting base layer having a top surface, and a refractory metal-silicon-nitrogen layer adhered to the top surface of said conducting base layer, said refractory metal-silicon-nitrogen layer further comprising alternating sub-layers of refractory metal-nitrogen and silicon-nitrogen each having a thickness of less than about 10 nm.
Claim 5
Dependent Claim
50 words
A semiconductor structure comprising a conducting base layer having a top surface, and a refractory metal-silicon-nitrogen layer adhered to the top surface of said conducting base layer, said refractory metal-silicon-nitrogen layer further comprising alternating sub-layers of refractory metal-nitrogen and silicon-nitrogen each having a thickness of less than about 10 nm.
Claim 6
Dependent Claim
24 words
A semiconductor structure according to claim 3, wherein said diffusion barrier layer is a sputtered TaSiN consisting of alternating sub-layers of TaN and SiN.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-11-19 | 2000-05-20 | 2000-11-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-11-19 | 2004-05-20 | 2004-11-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-11-19 | 2008-05-20 | 2008-11-19 | $7700.00 | Window Closed / Lapsed |