US6794284B2
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Systems and methods for forming refractory metal nitride layers using disilazanes
Assignee: Micron Technology Inc
•
Filing: 2002-08-28
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Granted: 2004-09-21
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Expires: 2022-08-28
Abstract
Abstract A method of forming (and apparatus for forming) refractory metal nitride layers (including silicon nitride layers), such as a tantalum (silicon) nitride barrier layer, on a substrate by using a vapor deposition process with a refractory metal precursor compound, a disilazane, and an optional silicon precursor compound.
Inventors
- 👤 Brian A. Vaartstra
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:43
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45531; C23C16/22; C23C16/30; C23C16/34; C23C16/45553; H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/052; H10W20/0526; H10D1/682
Claims Analysis
Total Claims: 80
Claim 1
Independent Claim
131 words
A method of forming a layer on a substrate, the method comprising: providing a substrate; providing a vapor comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; providing a vapor comprising one or more disilazanes of the formula (R) x H 3-x SiNHSi(R) x H 3-x , wherein each R is independently an organic group, and x is 1 to 3; and directing the vapors comprising the one or more refractory metal precursor compounds and the one or more disilazanes to the substrate to form a refractory metal nitride layer on one or more surfaces of the substrate.
Claim 2
Independent Claim
131 words
A method of forming a layer on a substrate, the method comprising: providing a substrate; providing a vapor comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; providing a vapor comprising one or more disilazanes of the formula (R) x H 3-x SiNHSi(R) x H 3-x , wherein each R is independently an organic group, and x is 1 to 3; and directing the vapors comprising the one or more refractory metal precursor compounds and the one or more disilazanes to the substrate to form a refractory metal nitride layer on one or more surfaces of the substrate.
Claim 3
Dependent Claim
21 words
The method of claim 1 wherein Y is independently selected from the group consisting of F, Cl, I, and combinations thereof.
Claim 4
Dependent Claim
12 words
The method of claim 2 wherein each Y is a fluorine atom.
Claim 5
Dependent Claim
20 words
The method of claim 3 wherein M is selected from the group consisting of Ti, Nb, Ta, Mo, and W.
Claim 6
Dependent Claim
14 words
The method of claim 4 wherein M is tantalum and n is 5 .
Claim 7
Dependent Claim
20 words
The method of claim 1 wherein each R is independently selected from the group consisting of a (C1-C6) organic group.
Claim 8
Dependent Claim
13 words
The method of claim 6 wherein each R is independently ethyl or methyl.
Claim 9
Dependent Claim
20 words
The method of claim 7 wherein the disilazane is tetramethyldisilazane (TMDS), (CH 3 HSiNHSiH(CH 3 ) 2 , or hexamethyldisilazane.
Claim 10
Dependent Claim
10 words
The method of claim 8 wherein the disilazane is tetramethyldisilazane.
Claim 11
Dependent Claim
14 words
The method of claim 1 wherein the formed layer is a tantalum nitride layer.
Claim 12
Dependent Claim
12 words
The method of claim 1 wherein the substrate comprises a silicon-containing surface.
Claim 13
Dependent Claim
20 words
The method of claim 1 wherein the formed layer has a thickness of about 10 Å to about 100 Å.
Claim 14
Dependent Claim
36 words
The method of claim 1 further comprising providing a vapor comprising one or more silicon precursor compounds other than the disilazane and directing the vapor to the substrate to form a refractory metal silicon nitride layer.
Claim 15
Dependent Claim
32 words
The method of claim 13 further comprising providing one or more reaction gases other than the disilazanes and silicon precursor compounds and directing the one or more reaction gases to the substrate.
Claim 16
Dependent Claim
14 words
The method of claim 1 wherein the formed layer is a diffusion barrier layer.
Claim 17
Dependent Claim
21 words
The method of claim 1 wherein providing the vapors and directing the vapors is accomplished using a chemical vapor deposition process.
Claim 18
Dependent Claim
19 words
The method of claim 16 wherein the temperature of the substrate is about 100° C. to about 600° C.
Claim 19
Dependent Claim
27 words
The method of claim 1 wherein providing the vapors and directing the vapors is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 20
Dependent Claim
19 words
The method of claim 18 wherein the temperature of the substrate is about 25° C. to about 400° C.
Claim 21
Dependent Claim
42 words
The method of claim 1 further comprising providing a vapor comprising one or more metal-containing precursor compounds having a formula different than Formula I and directing the vapor comprising the precursor compounds having a formula different than Formula I to the substrate.
Claim 22
Independent Claim
141 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a vapor comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; providing a vapor comprising one or more disilazanes of the formula (R) x H 3-x SiNHSi(R) x H 3-x , wherein each R is independently an organic group, and x is 1 to 3; and directing the vapors comprising the one or more refractory metal precursor compounds and the one or more disilazanes to the semiconductor substrate or substrate assembly to form a refractory metal nitride layer on one or more surfaces of the semiconductor substrate or substrate assembly.
Claim 23
Independent Claim
141 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a vapor comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; providing a vapor comprising one or more disilazanes of the formula (R) x H 3-x SiNHSi(R) x H 3-x , wherein each R is independently an organic group, and x is 1 to 3; and directing the vapors comprising the one or more refractory metal precursor compounds and the one or more disilazanes to the semiconductor substrate or substrate assembly to form a refractory metal nitride layer on one or more surfaces of the semiconductor substrate or substrate assembly.
Claim 24
Dependent Claim
16 words
The method of claim 21 wherein the semiconductor substrate or substrate assembly is a silicon wafer.
Claim 25
Dependent Claim
21 words
The method of claim 21 wherein Y is independently selected from the group consisting of F, Cl, I, and combinations thereof.
Claim 26
Dependent Claim
12 words
The method of claim 23 wherein each Y is a fluorine atom.
Claim 27
Dependent Claim
13 words
The method of claim 21 wherein M is tantalum and n is 5.
Claim 28
Dependent Claim
19 words
The method of claim 21 wherein each R is independently selected from the group consisting of (C1-C6) organic compounds.
Claim 29
Dependent Claim
22 words
The method of claim 26 wherein the disilazane is tetramethyldisilazane (TMDS), (CH 3 ) 2 HSiNHSiH(CH 3 ) 2 , or hexamethyldisilazane.
Claim 30
Dependent Claim
14 words
The method of claim 21 wherein the formed layer is a tantalum nitride layer.
Claim 31
Dependent Claim
16 words
The method of claim 21 wherein the semiconductor substrate or substrate assembly comprises a silicon-containing surface.
Claim 32
Dependent Claim
20 words
The method of claim 21 wherein the formed layer has a thickness of about 10 Å to about 100 Å.
Claim 33
Dependent Claim
40 words
The method of claim 21 further comprising providing a vapor comprising one or more silicon precursor compounds other than the disilazane and directing the vapor to the semiconductor substrate or substrate assembly to form a refractory metal silicon nitride layer.
Claim 34
Dependent Claim
36 words
The method of claim 31 further comprising providing one or more reaction gases other than the disilazanes and silicon precursor compounds and directing the one or more reaction gases to the semiconductor substrate or substrate assembly.
Claim 35
Dependent Claim
14 words
The method of claim 21 wherein the formed layer is a diffusion barrier layer.
Claim 36
Dependent Claim
16 words
The method of claim 21 wherein the semiconductor substrate or substrate assembly comprises a silicon-containing surface.
Claim 37
Dependent Claim
21 words
The method of claim 21 wherein providing the vapors and directing the vapors is accomplished using a chemical vapor deposition process.
Claim 38
Dependent Claim
23 words
The method of claim 35 wherein the temperature of the semiconductor substrate or substrate assembly is about 100° C. to about 600° C.
Claim 39
Dependent Claim
28 words
The method of claim 35 wherein the semiconductor substrate or substrate assembly is in a deposition chamber having a pressure of about 0.1 torr to about 10 torr.
Claim 40
Dependent Claim
27 words
The method of claim 21 wherein providing the vapors and directing the vapors is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 41
Dependent Claim
23 words
The method of claim 38 wherein the temperature of the semiconductor substrate or substrate assembly is about 25° C. to about 400° C.
Claim 42
Dependent Claim
29 words
The method of claim 38 wherein the semiconductor substrate or substrate assembly is in a deposition chamber having a pressure or about 10 −4 torr to about 1 torr.
Claim 43
Dependent Claim
39 words
The method of claim 38 wherein during the atomic layer deposition process, the refractory metal nitride layer is formed by alternately introducing the one or more vaporized precursor compounds and one or more vaporized disilazanes during each deposition cycle.
Claim 44
Dependent Claim
45 words
The method of claim 21 further comprising providing a vapor comprising one or more metal-containing precursor compounds having a formula different than Formula I and directing the vapor comprising the compounds having a formula different than Formula I to the semiconductor substrate or substrate assembly.
Claim 45
Independent Claim
162 words
A method of forming a layer on a substrate, the method comprising: providing a substrate comprising a silicon-containing surface; providing a vapor comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; directing the vapor comprising the one or more precursor compounds of the Formula I to the substrate and allowing the one or more compounds to chemisorb on the silicon-containing surface; providing a vapor comprising one or more disilazanes of the formula (R) x H 3-x SiNHSi(R) x H 3-x , wherein each R is independently an organic group, and x is 1 to 3; directing the vapor comprising the one or more disilazanes to the substrate with the chemisorbed compounds thereon to form a refractory metal nitride barrier layer on one or more silicon-containing surfaces of the substrate.
Claim 46
Independent Claim
162 words
A method of forming a layer on a substrate, the method comprising: providing a substrate comprising a silicon-containing surface; providing a vapor comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; directing the vapor comprising the one or more precursor compounds of the Formula I to the substrate and allowing the one or more compounds to chemisorb on the silicon-containing surface; providing a vapor comprising one or more disilazanes of the formula (R) x H 3-x SiNHSi(R) x H 3-x , wherein each R is independently an organic group, and x is 1 to 3; directing the vapor comprising the one or more disilazanes to the substrate with the chemisorbed compounds thereon to form a refractory metal nitride barrier layer on one or more silicon-containing surfaces of the substrate.
Claim 47
Dependent Claim
42 words
The method of claim 43 further comprising providing a vapor comprising one or more silicon precursor compounds other than the disilazane and directing the vapor to the substrate with the chemisorbed compounds thereon to form a refractory metal silicon nitride barrier layer.
Claim 48
Dependent Claim
21 words
The method of claim 43 wherein providing the vapors and directing the vapors is accomplished using a chemical vapor deposition process.
Claim 49
Dependent Claim
27 words
The method of claim 43 wherein providing the vapors and directing the vapors is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 50
Dependent Claim
38 words
The method of claim 43 further comprising providing one or more metal-containing precursor compounds having a formula different than Formula I and directing the vapor comprising the one or more compounds different than Formula I to the substrate.
Claim 51
Independent Claim
178 words
A method of forming a layer on a substrate, the method comprising: providing a semiconductor substrate or substrate assembly comprising a silicon-containing surface; providing a vapor comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is B refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; directing the vapor comprising the one or more precursor compounds of the Formula I to the semiconductor substrate or substrate assembly and allowing the one or more compounds to chemisorb on the silicon-containing surface; providing a vapor comprising one or more disilazanes of the formula (R) x H 3-x SiNHSi(R) x H 3-x , wherein each R is independently an organic group, and x is 1 to 3; directing the vapor comprising the one or more disilazanes to the semiconductor substrate or substrate assembly with the chemisorbed compounds thereon to form a refractory metal nitride barrier layer on one or more silicon-containing surfaces of the semiconductor substrate or substrate assembly.
Claim 52
Independent Claim
178 words
A method of forming a layer on a substrate, the method comprising: providing a semiconductor substrate or substrate assembly comprising a silicon-containing surface; providing a vapor comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is B refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; directing the vapor comprising the one or more precursor compounds of the Formula I to the semiconductor substrate or substrate assembly and allowing the one or more compounds to chemisorb on the silicon-containing surface; providing a vapor comprising one or more disilazanes of the formula (R) x H 3-x SiNHSi(R) x H 3-x , wherein each R is independently an organic group, and x is 1 to 3; directing the vapor comprising the one or more disilazanes to the semiconductor substrate or substrate assembly with the chemisorbed compounds thereon to form a refractory metal nitride barrier layer on one or more silicon-containing surfaces of the semiconductor substrate or substrate assembly.
Claim 53
Dependent Claim
21 words
The method of claim 48 wherein providing the vapors and directing the vapors is accomplished using a chemical vapor deposition process.
Claim 54
Dependent Claim
27 words
The method of claim 48 wherein providing the vapors and directing the vapors is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 55
Independent Claim
143 words
A method of forming a layer on a substrate, the method comprising: providing a substrate; providing a vapor comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; providing a vapor comprising one or more disilazanes of the formula (R) x H 3-x SiNHSi(R) x H 3-x , wherein each R is independently an organic group, and x is 1 to 3, with the proviso that the one or more disilazanes are not hexamethyldisilazane; and directing the vapors comprising the one or more refractory metal precursor compounds and the one or more disilazanes to the substrate to form a refractory metal nitride layer on one or more surfaces of the substrate.
Claim 56
Independent Claim
143 words
A method of forming a layer on a substrate, the method comprising: providing a substrate; providing a vapor comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; providing a vapor comprising one or more disilazanes of the formula (R) x H 3-x SiNHSi(R) x H 3-x , wherein each R is independently an organic group, and x is 1 to 3, with the proviso that the one or more disilazanes are not hexamethyldisilazane; and directing the vapors comprising the one or more refractory metal precursor compounds and the one or more disilazanes to the substrate to form a refractory metal nitride layer on one or more surfaces of the substrate.
Claim 57
Dependent Claim
15 words
The method of claim 51 wherein the substrate is a semiconductor substrate or substrate assembly.
Claim 58
Dependent Claim
13 words
The method of claim 51 with the proviso that M is not titanium.
Claim 59
Dependent Claim
14 words
The method of claim 51 the proviso that Y is not a chlorine atom.
Claim 60
Dependent Claim
13 words
The method of claim 54 with the proviso that M is not titanium.
Claim 61
Independent Claim
138 words
A method of forming a layer on a substrate, the method comprising: providing a substrate; providing a vapor comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and N is an integer selected to match the valence of the metal M, with the proviso that M is not titanium; providing a vapor comprising one or more disilazanes of the formula (R) 3 H 3-x SiNHSi(R) x H 3-x wherein each R is independently an organic group, and x is 1 to 3; and directing the vapors comprising the one or more refractory metal precursor compounds and the one or more disilazanes to the substrate to form a refractory metal nitride layer on one or more surfaces of the substrate.
Claim 62
Independent Claim
138 words
A method of forming a layer on a substrate, the method comprising: providing a substrate; providing a vapor comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and N is an integer selected to match the valence of the metal M, with the proviso that M is not titanium; providing a vapor comprising one or more disilazanes of the formula (R) 3 H 3-x SiNHSi(R) x H 3-x wherein each R is independently an organic group, and x is 1 to 3; and directing the vapors comprising the one or more refractory metal precursor compounds and the one or more disilazanes to the substrate to form a refractory metal nitride layer on one or more surfaces of the substrate.
Claim 63
Dependent Claim
15 words
The method of claim 56 wherein the substrate is a semiconductor substrate or substrate assembly.
Claim 64
Dependent Claim
14 words
The method of claim 56 the proviso that Y is not a chlorine atom.
Claim 65
Independent Claim
141 words
A method of forming a layer on a substrate, the method comprising: providing a substrate; providing a vapor comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M, with the proviso that Y is not a chlorine atom; providing a vapor comprising one or more disilazanes of the formula (R) x H 3-x SiNHSi(R) x H 3-x , wherein each R is independently an organic group, and x is 1 to 3; and directing the vapors comprising the one or more refractory metal precursor compounds and the one or more disilazanes to the substrate to form a refractory metal nitride layer on one or more surfaces of the substrate.
Claim 66
Independent Claim
141 words
A method of forming a layer on a substrate, the method comprising: providing a substrate; providing a vapor comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M, with the proviso that Y is not a chlorine atom; providing a vapor comprising one or more disilazanes of the formula (R) x H 3-x SiNHSi(R) x H 3-x , wherein each R is independently an organic group, and x is 1 to 3; and directing the vapors comprising the one or more refractory metal precursor compounds and the one or more disilazanes to the substrate to form a refractory metal nitride layer on one or more surfaces of the substrate.
Claim 67
Dependent Claim
15 words
The method of claim 59 wherein the substrate is a semiconductor substrate or substrate assembly.
Claim 68
Independent Claim
174 words
A method of forming a layer on a substrate, the method comprising: providing a substrate comprising a silicon-containing surface; providing a vapor comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; directing the vapor comprising the one or more precursor compounds of the Formula I to the substrate and allowing the one or more compounds to chemisorb on the silicon-containing surface; providing a vapor comprising one or more disilazanes of the formula (R) x H 3-x SiNHSi(R) x H 3-x , wherein each R is independently an organic group, and x is 1 to 3, with the proviso that the one or more disilazanes are not hexamethyldisilazane; directing the vapor comprising the one or more disilazanes to the substrate with the chemisorbed compounds thereon to form a refractory metal nitride barrier layer on one or more silicon-containing surfaces of the substrate.
Claim 69
Independent Claim
174 words
A method of forming a layer on a substrate, the method comprising: providing a substrate comprising a silicon-containing surface; providing a vapor comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; directing the vapor comprising the one or more precursor compounds of the Formula I to the substrate and allowing the one or more compounds to chemisorb on the silicon-containing surface; providing a vapor comprising one or more disilazanes of the formula (R) x H 3-x SiNHSi(R) x H 3-x , wherein each R is independently an organic group, and x is 1 to 3, with the proviso that the one or more disilazanes are not hexamethyldisilazane; directing the vapor comprising the one or more disilazanes to the substrate with the chemisorbed compounds thereon to form a refractory metal nitride barrier layer on one or more silicon-containing surfaces of the substrate.
Claim 70
Dependent Claim
15 words
The method of claim 61 wherein the substrate is a semiconductor substrate or substrate assembly.
Claim 71
Dependent Claim
13 words
The method of claim 61 with the proviso that M is not titanium.
Claim 72
Dependent Claim
16 words
The method of claim 61 , with the proviso that Y is not a chlorine atom.
Claim 73
Dependent Claim
13 words
The method of claim 64 with the proviso that M is not titanium.
Claim 74
Independent Claim
170 words
A method of forming a layer on a substrate, the method comprising: providing a substrate comprising a silicon-containing surface; providing a vapor comprising one or more refractory metal precursor compounds of the formula MY N (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M, with the proviso that M is not titanium; directing the vapor comprising the one or more precursor compounds of the Formula I to the substrate and allowing the one or more compounds to chemisorb on the silicon-containing surface; providing a vapor comprising one or more disilazanes of the formula (R) x H 3-x SiNHSi(R) x H 3-x , wherein each R is independently an organic group, and x is 1 to 3; directing the vapor comprising the one or more disilazanes to the substrate with the chemisorbed compounds thereon to form a refractory metal nitride barrier layer on one or more silicon-containing surfaces of the substrate.
Claim 75
Independent Claim
170 words
A method of forming a layer on a substrate, the method comprising: providing a substrate comprising a silicon-containing surface; providing a vapor comprising one or more refractory metal precursor compounds of the formula MY N (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M, with the proviso that M is not titanium; directing the vapor comprising the one or more precursor compounds of the Formula I to the substrate and allowing the one or more compounds to chemisorb on the silicon-containing surface; providing a vapor comprising one or more disilazanes of the formula (R) x H 3-x SiNHSi(R) x H 3-x , wherein each R is independently an organic group, and x is 1 to 3; directing the vapor comprising the one or more disilazanes to the substrate with the chemisorbed compounds thereon to form a refractory metal nitride barrier layer on one or more silicon-containing surfaces of the substrate.
Claim 76
Dependent Claim
15 words
The method of claim 66 wherein the substrate is a semiconductor substrate or substrate assembly.
Claim 77
Dependent Claim
14 words
The method of claim 66 the proviso that Y is not a chlorine atom.
Claim 78
Independent Claim
172 words
A method of forming a layer on a substrate, the method comprising: providing a substrate comprising a silicon-containing surface; providing a vapor comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M, with the proviso that Y is not a chlorine atom; directing the vapor comprising the one or more precursor compounds of the Formula I to the substrate and allowing the one or more compounds to chemisorb on the silicon-containing surface; providing a vapor comprising one or more disilazanes of the formula (R) x H 3-x SiNHSi(R) x H 3-x , wherein each R is independently an organic group, and x is 1 to 3; directing the vapor comprising the one or more disilazanes to the substrate with the chemisorbed compounds thereon to form a refractory metal nitride barrier layer on one or more silicon-containing surfaces of the substrate.
Claim 79
Independent Claim
172 words
A method of forming a layer on a substrate, the method comprising: providing a substrate comprising a silicon-containing surface; providing a vapor comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M, with the proviso that Y is not a chlorine atom; directing the vapor comprising the one or more precursor compounds of the Formula I to the substrate and allowing the one or more compounds to chemisorb on the silicon-containing surface; providing a vapor comprising one or more disilazanes of the formula (R) x H 3-x SiNHSi(R) x H 3-x , wherein each R is independently an organic group, and x is 1 to 3; directing the vapor comprising the one or more disilazanes to the substrate with the chemisorbed compounds thereon to form a refractory metal nitride barrier layer on one or more silicon-containing surfaces of the substrate.
Claim 80
Dependent Claim
15 words
The method of claim 69 wherein the substrate is a semiconductor substrate or substrate assembly.
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