US4766006A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Low pressure chemical vapor deposition of metal silicide
Assignee: Varian Medical Systems Inc
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Filing: 1986-05-15
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Granted: 1988-08-23
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Expires: 2006-05-15
Abstract
Abstract The invention relates to a process for the low pressure chemical vapor deposition (LPCVD) of metal silicide, especially molybdenum silicide, on a substrate at a low temperature. The walls of a LPCVD reactor which contains a heated pedestal for holding a substrate are cooled and the pedestal is heated so the substrate temperature reaches a desired level, depending on the metal silicide to be deposited. A metal halide and a silane or disilane are fed separately into the deposition chamber and mixed behind a small baffle plate at the entrance. The metal silicide is deposited on the substrate surface. It is preferred that the substrate be pre-treated with H 2 plasma before deposition.
Inventors
- 👤 Peter J. Gaczi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 16:26
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/42; H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43
Claims Analysis
Total Claims: 41
Claim 1
Independent Claim
127 words
A process for the low pressure chemical vapor deposition of a metal silicide film on a substrate at a reduced temperature, which comprises: (a) maintaining the substrate at a temperature of from about 40° C. to about 250° C. in a reactor whose walls are cooled, and (b) simultaneously introducing into the reactor a metal compound selected from the group consisting of MoF 6 and WF 6 , and a silicon compound selected from the group consisting of SiH 4 and Si 2 H 6 , with the proviso that when the metal compound is WF 6 , the silicon compound is Si 2 H 6 , such that a metal silicide film having a silicon:metal ratio of less than about 2.3 is deposited on said substrate.
Claim 2
Dependent Claim
127 words
A process for the low pressure chemical vapor deposition of a metal silicide film on a substrate at a reduced temperature, which comprises: (a) maintaining the substrate at a temperature of from about 40° C. to about 250° C. in a reactor whose walls are cooled, and (b) simultaneously introducing into the reactor a metal compound selected from the group consisting of MoF 6 and WF 6 , and a silicon compound selected from the group consisting of SiH 4 and Si 2 H 6 , with the proviso that when the metal compound is WF 6 , the silicon compound is Si 2 H 6 , such that a metal silicide film having a silicon:metal ratio of less than about 2.3 is deposited on said substrate.
Claim 3
Dependent Claim
23 words
The process of claim 1 wherein said substrate is subjected to a H 2 plasma treatment in the reactor prior to step (b).
Claim 4
Dependent Claim
32 words
The process of claim 1 wherein the metal compound is MoF 6 , the silicon compound is SiH 4 , and the temperature is from about 90° C. to about 170° C.
Claim 5
Dependent Claim
17 words
The process of claim 3 wherein said temperature is from about 120° C. to about 160° C.
Claim 6
Dependent Claim
23 words
The process of claim 3 wherein said substrate is subjected to a H 2 plasma treatment in the reactor prior to step (b).
Claim 7
Dependent Claim
23 words
The process of claim 4 wherein said substrate is subjected to a H 2 plasma treatment in the reactor prior to step (b).
Claim 8
Dependent Claim
34 words
The process of claim 1 wherein the metal compound is MoF 6 , the silicon compound is Si 2 H 6 , and the temperature is from about 40° C. to about 90° C.
Claim 9
Dependent Claim
23 words
The process of claim 7 wherein said substrate is subjected to a H 2 plasma treatment in the reactor prior to step (b).
Claim 10
Dependent Claim
24 words
The process of claim 1 wherein the metal compound is WF 6 and the temperature is from about 180° C. to about 250° C.
Claim 11
Dependent Claim
23 words
The process of claim 9 wherein said substrate is subjected to a H 2 plasma treatment in the reactor prior to step (b).
Claim 12
Dependent Claim
59 words
The process of claim 1 wherein the substrate comprises at least one wafer and the metal compound is introduced into the reactor with a flow rate per wafer of from about 2 sccm to about 10 sccm and the silicon compound is introduced into the reactor with a flow rate of from about 15 sccm to about 145 sccm.
Claim 13
Dependent Claim
16 words
The process of claim 1 wherein the silicon:metal ratio is from about 1.7 to about 2.3.
Claim 14
Dependent Claim
124 words
A process for the low pressure chemical vapor deposition of a molybdenum silicide film on a substrate at a reduced temperature, which comprises: (a) maintaining the substrate comprising at least one wafer at a temperature of from about 40° C. to about 170° C. in a reactor whose walls are cooled, and (b) simultaneously introducing into the reactor MoF 6 with a flow rate from about 2 sccm to about 10 sccm per wafer and a silicon compound selected from the group consisting of SiH 4 and Si 2 H 6 with a flow rate of from about 15 sccm to about 145 sccm, such that a molybdenum silicide film having a Si:Mo ratio of less than about 2.3 is deposited on said substrate.
Claim 15
Dependent Claim
124 words
A process for the low pressure chemical vapor deposition of a molybdenum silicide film on a substrate at a reduced temperature, which comprises: (a) maintaining the substrate comprising at least one wafer at a temperature of from about 40° C. to about 170° C. in a reactor whose walls are cooled, and (b) simultaneously introducing into the reactor MoF 6 with a flow rate from about 2 sccm to about 10 sccm per wafer and a silicon compound selected from the group consisting of SiH 4 and Si 2 H 6 with a flow rate of from about 15 sccm to about 145 sccm, such that a molybdenum silicide film having a Si:Mo ratio of less than about 2.3 is deposited on said substrate.
Claim 16
Dependent Claim
24 words
The process of claim 13 wherein said silicon compound is SiH 4 and the temperature is from about 90° C. to about 170° C.
Claim 17
Dependent Claim
17 words
The process of claim 14 wherein said temperature is from about 120° C. to about 160° C.
Claim 18
Dependent Claim
26 words
The process of claim 13 wherein said silicon compound is Si 2 H 6 and the temperature is from about 40° C. to about 90° C.
Claim 19
Dependent Claim
23 words
The process of claim 13 wherein said substrate is subjected to a H 2 plasma treatment in the reactor prior to step (b).
Claim 20
Dependent Claim
23 words
The process of claim 14 wherein said substrate is subjected to a H 2 plasma treatment in the reactor prior to step (b).
Claim 21
Dependent Claim
23 words
The process of claim 15 wherein said substrate is subjected to a H 2 plasma treatment in the reactor prior to step (b).
Claim 22
Dependent Claim
23 words
The process of claim 16 wherein said substrate is subjected to a H 2 plasma treatment in the reactor prior to step (b).
Claim 23
Dependent Claim
16 words
The process of claim 13 wherein the Si:Mo ratio is from about 1.7 to about 2.3.
Claim 24
Dependent Claim
110 words
A process for the low pressure chemical vapor deposition of a molybdenum silicide film on a substrate at a reduced temperature, which comprises: (a) maintaining the substrate comprising at least one wafer at a temperature of from about 90° C. to about 170° C. in a reactor whose walls are cooled, and (b) simultaneously introducing into the reactor MoF 6 with a flow rate from about 2 sccm to about 10 sccm per wafer and SiH 4 with a flow rate of from about 15 sccm to about 145 sccm, such that a molybdenum silicide film having a Si:Mo ratio of less than about 2.3 is deposited on said substrate.
Claim 25
Dependent Claim
110 words
A process for the low pressure chemical vapor deposition of a molybdenum silicide film on a substrate at a reduced temperature, which comprises: (a) maintaining the substrate comprising at least one wafer at a temperature of from about 90° C. to about 170° C. in a reactor whose walls are cooled, and (b) simultaneously introducing into the reactor MoF 6 with a flow rate from about 2 sccm to about 10 sccm per wafer and SiH 4 with a flow rate of from about 15 sccm to about 145 sccm, such that a molybdenum silicide film having a Si:Mo ratio of less than about 2.3 is deposited on said substrate.
Claim 26
Dependent Claim
17 words
The process of claim 22 wherein said temperature is from about 120° C. to about 160° C.
Claim 27
Dependent Claim
23 words
The process of claim 22 wherein said substrate is subject to a H 2 plasma treatment in the reactor prior to step (b).
Claim 28
Dependent Claim
23 words
The process of claim 23 wherein said substrate is subjected to a H 2 plasma treatment in the reactor prior to step (b).
Claim 29
Dependent Claim
16 words
The process of claim 22 wherein the Si:Mo ratio is from about 1.7 to about 2.3.
Claim 30
Dependent Claim
16 words
The process of claim 23 wherein the Si:Mo ratio is from about 1.7 to about 2.3.
Claim 31
Dependent Claim
118 words
A process for the low pressure chemical vapor deposition of a molybdenum silicide film on a substrate at a reduced temperature, which comprises: (a) maintaining the substrate comprising at least one wafer at a temperature of from about 90° C. to about 170° C. in a reactor whose walls are cooled, (b) treating said substrate with H 2 plasma, and (c) simultaneously introducing into the reactor MoF 6 with a flow rate from about 2 sccm to about 10 sccm per wafer and SiH 4 with a flow rate of from about 15 sccm to about 145 sccm, such that a molybdenum silicide film having a Si:Mo ratio of less than about 2.3 is deposited on said substrate.
Claim 32
Dependent Claim
118 words
A process for the low pressure chemical vapor deposition of a molybdenum silicide film on a substrate at a reduced temperature, which comprises: (a) maintaining the substrate comprising at least one wafer at a temperature of from about 90° C. to about 170° C. in a reactor whose walls are cooled, (b) treating said substrate with H 2 plasma, and (c) simultaneously introducing into the reactor MoF 6 with a flow rate from about 2 sccm to about 10 sccm per wafer and SiH 4 with a flow rate of from about 15 sccm to about 145 sccm, such that a molybdenum silicide film having a Si:Mo ratio of less than about 2.3 is deposited on said substrate.
Claim 33
Dependent Claim
17 words
The process of claim 28 wherein said temperature is from about 120° C. to about 160° C.
Claim 34
Dependent Claim
14 words
The process of claim 28 wherein the reactor is purged prior to step (b).
Claim 35
Dependent Claim
16 words
The process of claim 28 wherein the Si:Mo ratio is from about 1.7 to about 2.3.
Claim 36
Dependent Claim
16 words
The process of claim 29 wherein the Si:Mo ratio is from about 1.7 to about 2.3.
Claim 37
Dependent Claim
93 words
A process for the low pressure chemical vapor deposition of a metal silicide film on a substrate at a reduced temperature, which comprises: (a) maintaining the substrate at a temperature of from about 350° C. to about 400° C. in a reactor whose walls are cooled, and (b) simultaneously introducing into the reactor Si 2 H 6 and a metal compound selected from the group consisting of TaCl 5 and TiCl 4 , such that a metal silicide film having a silicon:metal ratio of less than about 2.3 is deposited on said substrate.
Claim 38
Dependent Claim
93 words
A process for the low pressure chemical vapor deposition of a metal silicide film on a substrate at a reduced temperature, which comprises: (a) maintaining the substrate at a temperature of from about 350° C. to about 400° C. in a reactor whose walls are cooled, and (b) simultaneously introducing into the reactor Si 2 H 6 and a metal compound selected from the group consisting of TaCl 5 and TiCl 4 , such that a metal silicide film having a silicon:metal ratio of less than about 2.3 is deposited on said substrate.
Claim 39
Dependent Claim
23 words
The process of claim 33 wherein said substrate is subjected to a H 2 plasma treatment in the reactor prior to step (b).
Claim 40
Dependent Claim
59 words
The process of claim 33 wherein the substrate comprises at least one wafer and the metal compound is introduced into the reactor with a flow rate per wafer of from about 2 sccm to about 10 sccm and the silicon compound is introduced into the reactor with a flow rate of from about 15 sccm to about 145 sccm.
Claim 41
Dependent Claim
16 words
The process of claim 33 wherein the silicon:metal ratio is from about 1.7 to about 2.3.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-08-23 | 1992-02-22 | 1992-08-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-08-23 | 1996-02-22 | 1996-08-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-08-23 | 2000-02-22 | 2000-08-23 | $7700.00 | Window Closed / Lapsed |