US20030190423A1
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Multiple precursor cyclical deposition system
Assignee: Applied Materials Inc
•
Filing: 2002-04-08
•
Granted: —
•
Expires: 2022-04-08
Abstract
Abstract Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a ternary material layer over a substrate structure comprises providing at least one cycle of gases to deposit a ternary material layer. One cycle comprises introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor in which the pulse of the second precursor and the pulse of the third precursor at least partially overlap. In one aspect, the ternary material layer includes, but is not limited to, tungsten boron silicon (WB x Si y ), titanium silicon nitride (TiSi x N y ), tantalum silicon nitride (TaSi x N y ), silicon oxynitride (SiO x N y ), and hafnium silicon oxide (HfSi x O y ). In one aspect, the composition of the ternary material layer may be tuned by changing the flow ratio of the second precursor to the third precursor between cycles.
Inventors
- 👤 Michael Yang
- 👤 Hyungsuk Yoon
- 👤 Hui Zhang
- 👤 Hongbin Fang
- 👤 Ming Xi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:52
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45544; C23C16/45527; C23C16/45531; C23C16/45561
Claims Analysis
Total Claims: 47
Claim 1
Independent Claim
100 words
1 . A method of depositing a ternary material layer over a substrate structure comprising: providing at least one cycle of gases to deposit a ternary material layer selected from the group including WB x Si y , TiSi x N y , TaSi x N y , and HfSi x O y , the at least one cycle comprising: introducing a pulse of a first precursor; introducing a pulse of a second precursor; and introducing a pulse of a third precursor, wherein the pulse of the second precursor and the pulse of the third precursor at least partially overlap.
Claim 2
Dependent Claim
100 words
1 . A method of depositing a ternary material layer over a substrate structure comprising: providing at least one cycle of gases to deposit a ternary material layer selected from the group including WB x Si y , TiSi x N y , TaSi x N y , and HfSi x O y , the at least one cycle comprising: introducing a pulse of a first precursor; introducing a pulse of a second precursor; and introducing a pulse of a third precursor, wherein the pulse of the second precursor and the pulse of the third precursor at least partially overlap.
Claim 3
Dependent Claim
24 words
2 . The method of claim 1 , further comprising changing the flow ratio of the second precursor to the third precursor between cycles.
Claim 4
Dependent Claim
19 words
3 . The method of claim 1 , wherein the ternary material layer comprises WB x Si y .
Claim 5
Dependent Claim
41 words
4 . The method of claim 3 , wherein WB x Si y comprises tungsten to borane to silicon in a ratio in which X is between about 0.0 and about 0.35 and Y is between about 0.0 and about 0.20.
Claim 6
Dependent Claim
31 words
5 . The method of claim 4 , wherein the first precursor is a tungsten precursor, the second precursor is a borane precursor, and the third precursor is a silicon precursor.
Claim 7
Dependent Claim
36 words
6 . The method of claim 5 , wherein the tungsten precursor comprises tungsten hexafluoride (WF 6 ), the borane precursor comprises diborane (B 2 H 6 ), the silicon precursor comprises silane (SiH 4 ).
Claim 8
Dependent Claim
19 words
7 . The method of claim 1 , wherein the ternary material layer comprises TiSi x N y .
Claim 9
Dependent Claim
41 words
8 . The method of claim 7 , wherein TiSi x N y comprises titanium to silicon to nitrogen in a ratio in which X is between about 0.0 and about 2.0 and Y is between about 0.0 and about 1.0.
Claim 10
Dependent Claim
31 words
9 . The method of claim 8 , wherein the first precursor is a titanium precursor, the second precursor is a silicon precursor, and the third precursor is a nitrogen precursor.
Claim 11
Dependent Claim
35 words
10 . The method of claim 9 , wherein the titanium precursor comprises titanium tetrachloride (TiCl 4 ), the silicon precursor comprises silane (SiH 4 ), and the nitrogen precursor comprises ammonia (NH 3 ).
Claim 12
Dependent Claim
19 words
11 . The method of claim 1 , wherein the ternary material layer comprises TaSi x N y .
Claim 13
Dependent Claim
41 words
12 . The method of claim 11 , wherein TaSi x N y comprises tantalum to silicon to nitrogen in a ratio in which X is between about 0.0 and about 1.0 and Y is between about 0.0 and about 2.0.
Claim 14
Dependent Claim
31 words
13 . The method of claim 12 , wherein the first precursor is a tantalum precursor, the second precursor is a silicon precursor, and the third precursor is a nitrogen precursor.
Claim 15
Dependent Claim
35 words
14 . The method of claim 13 , wherein the tantalum precursor comprises tantalum pentachloride (TaCl 5 ), the silicon precursor comprises silane (SiH 4 ), and the nitrogen precursor comprises ammonia (NH 3 ).
Claim 16
Dependent Claim
19 words
15 . The method of claim 1 , wherein the ternary material layer comprises HfSi x O y .
Claim 17
Dependent Claim
41 words
16 . The method of claim 15 , wherein HfSi x O y comprises hafnium to silicon to oxygen in a ratio in which X is between about 0.0 and about 0.5 and Y is between about 0.0 and about 1.0.
Claim 18
Dependent Claim
31 words
17 . The method of claim 16 , wherein the first precursor is a hafnium precursor, the second precursor is an silicon precursor, and the third precursor is a oxygen precursor.
Claim 19
Dependent Claim
27 words
18 . The method of claim 17 , wherein the hafnium precursor comprises hafnium tetrachloride, the silicon precursor comprises silane, and the oxygen precursor comprises water vapor.
Claim 20
Dependent Claim
72 words
19 . A method of depositing a ternary material layer over a substrate structure comprising: providing at least one cycle of gases to deposit a ternary material layer, the at least one cycle comprising: introducing a pulse of a first precursor; introducing a pulse of a second precursor; and introducing a pulse of a third precursor, wherein the pulse of the second precursor and the pulse of the third precursor partially overlap.
Claim 21
Dependent Claim
72 words
19 . A method of depositing a ternary material layer over a substrate structure comprising: providing at least one cycle of gases to deposit a ternary material layer, the at least one cycle comprising: introducing a pulse of a first precursor; introducing a pulse of a second precursor; and introducing a pulse of a third precursor, wherein the pulse of the second precursor and the pulse of the third precursor partially overlap.
Claim 22
Dependent Claim
24 words
20 . The method of claim 19 , further comprising changing the flow ratio of the second precursor to the third precursor between cycles.
Claim 23
Dependent Claim
52 words
21 . The method of claim 19 , wherein the ternary material layer comprises WB x Si y , wherein WB x Si y comprises tungsten to borane to silicon in a ratio in which X is between about 0.0 and about 0.35 and Y is between about 0.0 and about 0.20.
Claim 24
Dependent Claim
31 words
22 . The method of claim 21 , wherein the first precursor is a tungsten precursor, the second precursor is a borane precursor, and the third precursor is a silicon precursor.
Claim 25
Dependent Claim
52 words
23 . The method of claim 19 , wherein the ternary material layer comprises TiSi x N y , wherein TiSi x N y comprises titanium to silicon to nitrogen in a ratio in which X is between about 0.0 and about 2.0 and Y is between about 0.0 and about 1.0.
Claim 26
Dependent Claim
31 words
24 . The method of claim 23 , wherein the first precursor is a titanium precursor, the second precursor is a silicon precursor, and the third precursor is a nitrogen precursor.
Claim 27
Dependent Claim
52 words
25 . The method of claim 19 , wherein the ternary material layer comprises TaSi x N y , wherein TaSi x N y comprises tantalum to silicon to nitrogen in a ratio in which X is between about 0.0 and about 1.0 and Y is between about 0.0 and about 2.0.
Claim 28
Dependent Claim
31 words
26 . The method of claim 25 , wherein the first precursor is a tantalum precursor, the second precursor is a silicon precursor, and the third precursor is a nitrogen precursor.
Claim 29
Dependent Claim
52 words
27 . The method of claim 19 , wherein the ternary material layer comprises SiO x N y , wherein SiO x N y comprises silicon to oxygen to nitrogen in a ratio in which X is between about 0.0 and about 2.0 and Y is between about 0.0 and about 1.33.
Claim 30
Dependent Claim
31 words
28 . The method of claim 27 , wherein the first precursor is a silicon precursor, the second precursor is an oxygen precursor, and the third precursor is a nitrogen precursor.
Claim 31
Dependent Claim
52 words
29 . The method of claim 19 , wherein the ternary material layer comprises HfSi x O y , wherein HfSi x O y comprises hafnium to silicon to oxygen in a ratio in which X is between about 0.0 and about 0.5 and Y is between about 0.0 and about 1.0.
Claim 32
Dependent Claim
31 words
30 . The method of claim 29 , wherein the first precursor is a hafnium precursor, the second precursor is an silicon precursor, and the third precursor is a oxygen precursor.
Claim 33
Dependent Claim
79 words
31 . A method of depositing a ternary material layer over a substrate structure comprising: providing at least one cycle of gases to deposit a ternary material layer, the at least one cycle comprising: introducing a pulse of a first precursor; introducing a first pulse of a purge gas; introducing a pulse of a second precursor; introducing a pulse of a third precursor without a pulse of a purge gas; and introducing a second pulse of the purge gas.
Claim 34
Dependent Claim
79 words
31 . A method of depositing a ternary material layer over a substrate structure comprising: providing at least one cycle of gases to deposit a ternary material layer, the at least one cycle comprising: introducing a pulse of a first precursor; introducing a first pulse of a purge gas; introducing a pulse of a second precursor; introducing a pulse of a third precursor without a pulse of a purge gas; and introducing a second pulse of the purge gas.
Claim 35
Dependent Claim
31 words
32 . The method of claim 31 , wherein the first pulse of the purge gas and the second pulse of the purge comprise a continuous flow of the purge gas.
Claim 36
Dependent Claim
30 words
33 . The method of claim 31 , wherein the first pulse of the purge gas and the second pulse of the purge comprise separate flows of the purge gas.
Claim 37
Dependent Claim
24 words
34 . The method of claim 31 , further comprising changing the flow ratio of the second precursor to the third precursor between cycles.
Claim 38
Dependent Claim
52 words
35 . The method of claim 31 , wherein the ternary material layer comprises WB x Si y , wherein WB x Si y comprises tungsten to borane to silicon in a ratio in which X is between about 0.0 and about 0.35 and Y is between about 0.0 and about 0.20.
Claim 39
Dependent Claim
31 words
36 . The method of claim 35 , wherein the first precursor is a tungsten precursor, the second precursor is a borane precursor, and the third precursor is a silicon precursor.
Claim 40
Dependent Claim
52 words
37 . The method of claim 31 , wherein the ternary material layer comprises TiSi x N y , wherein TiSi x N y comprises titanium to silicon to nitrogen in a ratio in which X is between about 0.0 and about 2.0 and Y is between about 0.0 and about 1.0.
Claim 41
Dependent Claim
31 words
38 . The method of claim 37 , wherein the first precursor is a titanium precursor, the second precursor is a silicon precursor, and the third precursor is a nitrogen precursor.
Claim 42
Dependent Claim
52 words
39 . The method of claim 31 , wherein the ternary material layer comprises TaSi x N y , wherein TaSi x N y comprises tantalum to silicon to nitrogen in a ratio in which X is between about 0.0 and about 1.0 and Y is between about 0.0 and about 2.0.
Claim 43
Dependent Claim
31 words
40 . The method of claim 39 , wherein the first precursor is a tantalum precursor, the second precursor is a silicon precursor, and the third precursor is a nitrogen precursor.
Claim 44
Dependent Claim
52 words
41 . The method of claim 31 , wherein the ternary material layer comprises SiO x N y , wherein SiO x N y comprises silicon to oxygen to nitrogen in a ratio in which X is between about 0.0 and about 2.0 and Y is between about 0.0 and about 1.33.
Claim 45
Dependent Claim
31 words
42 . The method of claim 41 , wherein the first precursor is a silicon precursor, the second precursor is an oxygen precursor, and the third precursor is a nitrogen precursor.
Claim 46
Dependent Claim
52 words
43 . The method of claim 31 , wherein the ternary material layer comprises HfSi x O y , wherein HfSi x O y comprises hafnium to silicon to oxygen in a ratio in which X is between about 0.0 and about 0.5 and Y is between about 0.0 and about 1.0.
Claim 47
Dependent Claim
31 words
44 . The method of claim 43 , wherein the first precursor is a hafnium precursor, the second precursor is an silicon precursor, and the third precursor is a oxygen precursor.
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