US6207487B1
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Method for forming dielectric film of capacitor having different thicknesses partly
Assignee: Samsung Electronics Co Ltd
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Filing: 1999-10-12
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Granted: 2001-03-27
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Expires: 2019-10-12
Abstract
Abstract The present invention discloses a method for forming a dielectric film having improved leakage current characteristics in a capacitor. A lower electrode having a surface and a rounded protruding portion is formed on a semiconductor substrate. The surface and the protruding portion define at least one concave area. A chemisorption layer is then formed on the surface and the rounded protruding portion by supplying a first reactant. Also, a physisorption layer is formed on the chemisorption layer from the first reactant. Next, a portion of the physisorption layer is removed and a portion of the physisorption layer is left on the concave area. Subsequently, the chemisorption layer and the portion of the physisorption layer on the concave area react with a second reactant to form a dielectric film on the surface of the lower electrode. The thickness of said dielectric film is greater on the concave area than on the protruding portion, thereby reducing leakage current.
Inventors
- 👤 Yeong-kwan Kim
- 👤 Sang-in Lee
- 👤 Chang-soo Park
- 👤 Young-sun Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:42
CPC Classifications
H; H10; H10B; H10B12/00; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
153 words
A method for forming a dielectric film in a capacitor comprising the steps of: (a) providing a lower electrode having a surface and a rounded protruding portion, said surface and said protruding portion defining at least one concave area; (b) forming a chemisorption layer comprised of at least one atom of the first reactant chemically bonded to the surface of the lower electrode, and a physisorption layer comprised of at least one material of the first reactant physically bonded to the chemisorption layer; (c) removing a portion of the physisorption layer, leaving a portion of the physisorption layer on the concave area; and (d) reacting the chemisorption layer and the portion of the physisorption layer on the concave area with a second reactant to form a dielectric film on the surface of the lower electrode, wherein the thickness of said dielectric film is greater on the concave area than on the protruding portion.
Claim 2
Independent Claim
153 words
A method for forming a dielectric film in a capacitor comprising the steps of: (a) providing a lower electrode having a surface and a rounded protruding portion, said surface and said protruding portion defining at least one concave area; (b) forming a chemisorption layer comprised of at least one atom of the first reactant chemically bonded to the surface of the lower electrode, and a physisorption layer comprised of at least one material of the first reactant physically bonded to the chemisorption layer; (c) removing a portion of the physisorption layer, leaving a portion of the physisorption layer on the concave area; and (d) reacting the chemisorption layer and the portion of the physisorption layer on the concave area with a second reactant to form a dielectric film on the surface of the lower electrode, wherein the thickness of said dielectric film is greater on the concave area than on the protruding portion.
Claim 3
Dependent Claim
37 words
The method according to claim 1 , wherein the first reactant is Al(CH 3 ) 3 , wherein the second reactant is H 2 O, and wherein the dielectric film is a Al 2 O 3 film.
Claim 4
Dependent Claim
25 words
The method according to claim 1 , wherein in step (c), the physisorption layer is partially removed by a purging method using an inert gas.
Claim 5
Dependent Claim
22 words
The method according to claim 1 , wherein in the step (c), the physisorption layer is partially removed by a pumping-out method.
Claim 6
Dependent Claim
31 words
The method according to claim 1 , wherein the steps (b) through (d) are repeated by a predetermined number of times until the dielectric film is formed to a desired thickness.
Claim 7
Dependent Claim
62 words
The method according to claim 1 , wherein the step (d) comprises the sub-steps of: (d-1) supplying the second reactant to the resultant structure from which the physisorption layer is partially removed, to cause a chemical reaction between the second reactant with the chemisorption layer and the portion of the physisorption layer; and (d-2) removing reaction byproducts generated in the step (d-1).
Claim 8
Dependent Claim
25 words
The method according to claim 6 , wherein in the step (d-2), the reaction byproducts are removed by a purging method using an inert gas.
Claim 9
Dependent Claim
21 words
The method according to claim 6 , wherein in the step (d-2), the reaction byproducts are removed by a pumping-out method.
Claim 10
Dependent Claim
21 words
The method according to claim 2 , wherein the steps (a) through (d) are performed at a temperature of 300° C.
Claim 11
Dependent Claim
24 words
The method according to claim 2 , wherein the steps (a) through (d) are performed under the pressure in the range of 1-5 Torr.
Claim 12
Dependent Claim
65 words
The method according to claim 1 , wherein the dielectric film is formed of a monatomic oxide selected from the group consisting of TiO 2 , ZrO 2 , HfO 2 , Ta 2 O 5 , Nb 2 O 5 , CeO 2 , Y 2 O 3 , SiO 2 , In 2 O 3 , RuO 2 , and IrO 2 .
Claim 13
Dependent Claim
80 words
The method according to claim 1 , wherein the dielectric film is formed of a complex oxide selected from the group consisting of SrTiO 3 , PbTiO 3 , SrRuO 3 , CaRuO 3 , (Ba, Sr)TiO 3 , Pb(Zr, Ti)O 3 , (Pb, La) (Zr, Ti)O 3 , (Sr, Ca)RuO 3 , (Ba, Sr)RuO 3 , I 2 O 3 (ITO) doped with Sn, In 2 O 3 doped with F, and In 2 O 3 doped with Zr.
Claim 14
Dependent Claim
38 words
The method according to claim 1 , wherein the dielectric film is formed of a monatomic nitride selected from the group consisting of SiN, NbN, ZrN, TiN, TaN, Ya 3 N 5 , AIN, GaN, WN, and BN.
Claim 15
Dependent Claim
30 words
The method according to claim 1 , wherein the dielectric film is formed of a complex nitride selected from the group consisting of WBN, WSiN, TiSiN, TaSiN, AlSiN, and AlTiN.
Claim 16
Dependent Claim
18 words
The method according to claim 1 , wherein the dielectric film is formed by two or more reactants.
Claim 17
Dependent Claim
89 words
The method according to claim 1 , wherein the first reactant is one selected from the group consisting of Al(CH 3 ) 3 , AlCl 3 , AlH 3 N(CH 3 ) 3 , C 6 H 15 AlO, (C 4 H 9 ) 2 AlH, (CH 3 ) 2 AlCl, (C 2 H 5 ) 3 Al and (C 4 H 9 ) 3 Al, and the second reactant is one selected from the group consisting of H 2 O, N 2 O, O 3 and oxygen radical.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-03-26 | 2004-09-25 | 2005-03-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-03-26 | 2008-09-25 | 2009-03-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-03-26 | 2012-09-25 | 2013-03-27 | $7700.00 | Window Closed / Lapsed |