US6372598B2
Expired / Lapsed
US
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Method of forming selective metal layer and method of forming capacitor and filling contact hole using the same
Assignee: Samsung Electronics Co Ltd
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Filing: 1999-06-16
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Granted: 2002-04-16
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Expires: 2019-06-16
Abstract
Abstract A selective metal layer formation method, a capacitor formation method using the same, and a method of forming an ohmic layer on a contact hole and filling the contact hole using the same, are provided. A sacrificial metal layer is selectively deposited on a conductive layer by supplying a sacrificial metal source gas which deposits selectively on a semiconductor substrate having an insulating film and the conductive layer. Sacrificial metal atoms and a halide are formed, and the sacrificial metal layer is replaced with a deposition metal layer such as titanium Ti or platinum Pt, by supplying a metal halide gas having a halogen coherence smaller than the halogen coherence of the metal atoms in the sacrificial metal layer. If such a process is used to form a capacitor lower electrode or form an ohmic layer on the bottom of a contact hole, a metal layer can be selectively formed at a temperature of 500° C. or lower.
Inventors
- 👤 Sang-bum Kang
- 👤 Yun-sook Chae
- 👤 Sang-in Lee
- 👤 Hyun-Seok Lim
- 👤 Mee-Young Yoon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:42
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D64/00; H10D64/01; H10D64/011; C; C23; C23C; C23C16/00; C23C16/04; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057; H10W20/064; H10W20/065; H10W20/066; H10W20/071; H10W20/081; H10W20/082
Claims Analysis
Total Claims: 37
Claim 1
Independent Claim
123 words
A method of forming a selective metal layer on a semiconductor substrate, the method comprising the steps of: forming a conductive layer on the substrate; forming an insulative layer over the conductive layer; etching a portion of the insulative layer and exposing a portion of the conductive layer; selectively forming a sacrificial metal layer on the exposed portion of the conductive layer by exposing the exposed portion of the conductive layer and the insulative layer to a sacrificial metal source gas which is deposited selectively on the conductive layer; and replacing the sacrificial metal layer with a deposition metal layer by supplying a metal halide gas having a halogen coherence smaller than the halogen coherence of metal atoms in the sacrificial metal layer.
Claim 2
Independent Claim
123 words
A method of forming a selective metal layer on a semiconductor substrate, the method comprising the steps of: forming a conductive layer on the substrate; forming an insulative layer over the conductive layer; etching a portion of the insulative layer and exposing a portion of the conductive layer; selectively forming a sacrificial metal layer on the exposed portion of the conductive layer by exposing the exposed portion of the conductive layer and the insulative layer to a sacrificial metal source gas which is deposited selectively on the conductive layer; and replacing the sacrificial metal layer with a deposition metal layer by supplying a metal halide gas having a halogen coherence smaller than the halogen coherence of metal atoms in the sacrificial metal layer.
Claim 3
Dependent Claim
23 words
The method of claim 1 , further comprising the step of supplying a purge gas before the sacrificial metal source gas is supplied.
Claim 4
Dependent Claim
39 words
The method of claim 1 , further comprising the steps of: supplying a purge gas after the sacrificial metal layer is formed; and supplying a purge gas after the sacrificial metal layer is replaced with the deposition metal layer.
Claim 5
Dependent Claim
65 words
The method of claim 3 , wherein a deposition metal layer having a desired thickness is formed by repeating the steps of: forming the sacrificial metal layer; supplying a purge gas after the sacrificial metal layer is formed; replacing the sacrificial metal layer with the deposition metal layer; and supplying a purge gas after the sacrificial metal layer is replaced with the deposition metal layer.
Claim 6
Dependent Claim
13 words
The method of claim 1 , wherein the insulative layer comprises an oxide.
Claim 7
Dependent Claim
30 words
The method of claim 1 , wherein the conductive layer is formed of a material selected from the group consisting of silicon doped with impurities and a metal containing material.
Claim 8
Dependent Claim
16 words
The method of claim 6 , wherein the silicon doped with impurities has hydrogen termination radical.
Claim 9
Dependent Claim
55 words
The method of claim 6 , wherein the metal containing material for the conductive layer is selected from the group consisting of a refractory metal, a refractory metal nitride, a refractory carbide, a metal silicide, conductive Perovskite, a platinum-family metal, a conductive platinum-family oxide, and a mixture of two or more of the above materials.
Claim 10
Dependent Claim
41 words
The method of claim 2 , wherein the purge gas is selected from the group consisting of hydrogen (H 2 ), silane (SiH 4 ), nitrogen (N 2 ), argon (Ar)and a mixture of two or more of the above gases.
Claim 11
Dependent Claim
41 words
The method of claim 3 , wherein the purge gas is selected from the group consisting of hydrogen (H 2 ), silane (SiH 4 ), nitrogen (N 2 ), argon (Ar), and a mixture of two or more the above gases.
Claim 12
Dependent Claim
13 words
The method of claim 9 , wherein the purge gas is continuously supplied.
Claim 13
Dependent Claim
48 words
The method of claim 10 , wherein the purge gas is continuously supplied, or first supplied in a predetermined amount to purge and periodically supplied in predetermined amounts after the sacrificial metal layer is formed and after the sacrificial metal layer is replaced with the deposition metal layer.
Claim 14
Independent Claim
157 words
A method of forming a capacitor of a semiconductor device using a selective metal layer formation method, comprising the steps of: (a) forming a source region on a semiconductor substrate; (b) forming an insulating film on a substrate and patterning the insulating film to expose the source region on the substrate; (c) forming a conductive layer pattern on the insulating film and connected to the contact hole; (c) selectively forming a sacrificial metal layer on the conductive layer, by exposing the conductive layer and the insulating film to a sacrificial metal source gas which is deposited selectively on the conductive layer; (d) replacing the sacrificial metal layer with a deposition metal layer by supplying a metal halide gas, the metal having a halogen coherence smaller than the halogen coherence of metal atoms in the sacrificial metal layer; (e) forming a dielectric film on the deposition metal layer; and (f) forming an upper electrode on the dielectric film.
Claim 15
Independent Claim
157 words
A method of forming a capacitor of a semiconductor device using a selective metal layer formation method, comprising the steps of: (a) forming a source region on a semiconductor substrate; (b) forming an insulating film on a substrate and patterning the insulating film to expose the source region on the substrate; (c) forming a conductive layer pattern on the insulating film and connected to the contact hole; (c) selectively forming a sacrificial metal layer on the conductive layer, by exposing the conductive layer and the insulating film to a sacrificial metal source gas which is deposited selectively on the conductive layer; (d) replacing the sacrificial metal layer with a deposition metal layer by supplying a metal halide gas, the metal having a halogen coherence smaller than the halogen coherence of metal atoms in the sacrificial metal layer; (e) forming a dielectric film on the deposition metal layer; and (f) forming an upper electrode on the dielectric film.
Claim 16
Dependent Claim
26 words
The method of claim 13 , further comprising the step of supplying a purge gas before the step (c) of supplying the sacrificial metal source gas.
Claim 17
Dependent Claim
48 words
The method of claim 14 , wherein the purge gas is continuously supplied, or first supplied in a predetermined amount to purge and periodically supplied in predetermined amounts after the sacrificial metal layer is formed and after the sacrificial metal layer is replaced with the deposition metal layer.
Claim 18
Dependent Claim
13 words
The method of claim 13 , wherein the insulating film comprises an oxide.
Claim 19
Dependent Claim
35 words
The method of claim 13 , wherein the conductive layer pattern in the step (b) is formed of a material selected from the group consisting of polysilicon doped with impurities and a metal containing material.
Claim 20
Dependent Claim
31 words
The method of claim 13 , further comprising the step of siliciding the deposition metal layer after the step (d) of replacing the sacrificial metal layer with the deposition metal layer.
Claim 21
Dependent Claim
56 words
The method of claim 17 , wherein the metal containing material for the conductive layer pattern is selected from the group consisting of a refractory metal, a refractory metal nitride, a refractory carbide, a metal silicide, conductive Perovskite, a platinum-family metal, a conductive platinum-family oxide, and a mixture of two or more of the above materials.
Claim 22
Dependent Claim
43 words
The method of claim 13 , wherein a deposition metal layer having a desired thickness is formed by repeating the step (c) of forming the sacrificial metal layer and the step (d) of replacing the sacrificial metal layer with the deposition metal layer.
Claim 23
Dependent Claim
49 words
The method of claim 13 , wherein a deposition metal layer having a desired thickness is formed by repeating the steps of forming the sacrificial metal layer, of supplying a purge gas, of replacing the sacrificial metal layer with the deposition metal layer, and of supplying a purge gas.
Claim 24
Independent Claim
138 words
A method of filling a contact hole using a selective metal layer formation method, comprising the steps of: (a) forming a first conductive layer on a semiconductor substrate; (b) forming an insulating film on the first conductive layer and forming a contact hole exposing a portion of the first conductive layer by patterning the insulating film; (c) forming a sacrificial metal layer on the exposed portion of the first conductive layer by supplying a sacrificial metal source gas which is deposited selectively on the exposed portion of the first conductive layer; (d) replacing the sacrificial metal layer with a deposition metal layer by supplying a metal halide gas, the metal having a halogen coherence smaller than the halogen coherence of metal atoms in the sacrificial metal layer; and (e) forming a second conductive layer filling the contact hole.
Claim 25
Independent Claim
138 words
A method of filling a contact hole using a selective metal layer formation method, comprising the steps of: (a) forming a first conductive layer on a semiconductor substrate; (b) forming an insulating film on the first conductive layer and forming a contact hole exposing a portion of the first conductive layer by patterning the insulating film; (c) forming a sacrificial metal layer on the exposed portion of the first conductive layer by supplying a sacrificial metal source gas which is deposited selectively on the exposed portion of the first conductive layer; (d) replacing the sacrificial metal layer with a deposition metal layer by supplying a metal halide gas, the metal having a halogen coherence smaller than the halogen coherence of metal atoms in the sacrificial metal layer; and (e) forming a second conductive layer filling the contact hole.
Claim 26
Dependent Claim
17 words
The method of claim 22 , wherein the insulating film in the step (a) comprises an oxide.
Claim 27
Dependent Claim
45 words
The method of claim 22 , wherein the lower film in the step (a) is formed of a material selected from the group consisting of a refractory metal, a refractory metal nitride, a refractory metal carbide, and silicon doped with impurities having hydrogen termination radical.
Claim 28
Dependent Claim
25 words
The method of claim 22 , further comprising the step of supplying a purge gas before the step (b) of forming the sacrificial metal layer.
Claim 29
Dependent Claim
48 words
The method of claim 25 , wherein the purge gas is continuously supplied, or first supplied in a predetermined amount to purge and periodically supplied in predetermined amounts after the sacrificial metal layer is formed and after the sacrificial metal layer is replaced with the deposition metal layer.
Claim 30
Dependent Claim
42 words
The method of claim 25 , wherein the purge gas is selected from the group consisting of hydrogen (H 2 ), silane (SiH 4 ), nitrogen (N 2 ), argon (Ar), and a mixture of two or more of the above gases.
Claim 31
Dependent Claim
42 words
The method of claim 26 , wherein the purge gas is selected from the group consisting of hydrogen (H 2 ), silane (SiH 4 ), nitrogen (N 2 ), argon (Ar), and a mixture of two or more of the above gases.
Claim 32
Dependent Claim
43 words
The method of claim 22 , wherein a deposition metal layer having a desired thickness is formed by repeating the steps (b) of forming the sacrificial metal layer and the step (c) of replacing the sacrificial metal layer with the deposition metal layer.
Claim 33
Dependent Claim
49 words
The method of claim 22 , wherein a deposition metal layer having a desired thickness is formed by repeating the step of forming the sacrificial metal layer, of supplying a purge gas, of replacing the sacrificial metal layer with the deposition metal layer, and of supplying a purge gas.
Claim 34
Independent Claim
126 words
A method of forming a selective metal layer on a semiconductor substrate, the method comprising the steps of: forming a conductive layer on the substrate; forming an insulative layer over the conductive layer; etching a portion of the insulative layer and exposing a portion of the conductive layer; selectively forming an aluminum layer on the exposed portion of the conductive layer by exposing the exposed portion of the conductive layer and the insulative layer to a sacrificial metal source gas containing aluminum; selectively depositing a sacrificial aluminum layer on the conductive layer; and replacing the sacrificial aluminum layer with a deposition metal layer by supplying a metal halide gas having a halogen coherence smaller than the halogen coherence of metal atoms in the sacrificial metal layer.
Claim 35
Independent Claim
126 words
A method of forming a selective metal layer on a semiconductor substrate, the method comprising the steps of: forming a conductive layer on the substrate; forming an insulative layer over the conductive layer; etching a portion of the insulative layer and exposing a portion of the conductive layer; selectively forming an aluminum layer on the exposed portion of the conductive layer by exposing the exposed portion of the conductive layer and the insulative layer to a sacrificial metal source gas containing aluminum; selectively depositing a sacrificial aluminum layer on the conductive layer; and replacing the sacrificial aluminum layer with a deposition metal layer by supplying a metal halide gas having a halogen coherence smaller than the halogen coherence of metal atoms in the sacrificial metal layer.
Claim 36
Independent Claim
127 words
A method of forming a selective metal layer on a semiconductor substrate, the method comprising the steps of: forming a conductive layer on the substrate; forming an insulative layer over the conductive layer; etching a portion of the insulative layer and exposing a portion of the conductive layer; selectively forming a sacrificial metal layer on the exposed portion of the conductive layer by exposing the exposed portion of the conductive layer and the insulative layer to a sacrificial metal source gas containing aluminum; selectively depositing a sacrificial aluminum layer on the conductive layer; and replacing the sacrificial aluminum layer with a deposition metal layer by supplying a metal halide gas having a halogen coherence smaller than the halogen coherence of metal atoms in the sacrificial metal layer.
Claim 37
Independent Claim
127 words
A method of forming a selective metal layer on a semiconductor substrate, the method comprising the steps of: forming a conductive layer on the substrate; forming an insulative layer over the conductive layer; etching a portion of the insulative layer and exposing a portion of the conductive layer; selectively forming a sacrificial metal layer on the exposed portion of the conductive layer by exposing the exposed portion of the conductive layer and the insulative layer to a sacrificial metal source gas containing aluminum; selectively depositing a sacrificial aluminum layer on the conductive layer; and replacing the sacrificial aluminum layer with a deposition metal layer by supplying a metal halide gas having a halogen coherence smaller than the halogen coherence of metal atoms in the sacrificial metal layer.
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