US6348386B1
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Method for making a hafnium-based insulating film
Assignee: NXP USA Inc
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Filing: 2001-04-16
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Granted: 2002-02-19
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Expires: 2021-04-16
Abstract
Abstract A hafnium-based dielectric layer, such as hafnium oxide (HfO 2 ), is formed over a semiconductor substrate by flowing a hafnium-containing precursor of hafnium (Hf) and iodine (I) and an oxygen-containing precursor resulting in a high quality dielectric layer over the substrate. In one embodiment, the hafnium-containing precursor is Hafnium tetraiodide (HfI 4 ). The two precursors may be applied simultaneously or alternately. The hafnium tetraiodide may be provided into a reaction chamber via sublimation or direct liquid injection.
Inventors
- 👤 David Christopher Gilmer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:02
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69392; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01342; H10D64/60; H10D64/66; H10D64/68; H10D64/691; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6342; H10P14/66; H10P14/668; H10P14/6339
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
37 words
A method of forming a semiconductor device, comprising: placing a semiconductor substrate in a reaction chamber; and forming a dielectric layer over the semiconductor substrate comprising flowing a first precursor comprising Hf and I over the substrate.
Claim 2
Independent Claim
37 words
A method of forming a semiconductor device, comprising: placing a semiconductor substrate in a reaction chamber; and forming a dielectric layer over the semiconductor substrate comprising flowing a first precursor comprising Hf and I over the substrate.
Claim 3
Dependent Claim
18 words
The method of claim 1 , wherein the gate dielectric layer is further characterized as HfO 2 .
Claim 4
Dependent Claim
16 words
The method of claim 1 , wherein the precursor is further comprised as HfI 4 .
Claim 5
Dependent Claim
18 words
The method of claim 1 , wherein the dielectric layer is further characterized as a gate dielectric layer.
Claim 6
Dependent Claim
44 words
The method of claim 4 , further comprising: forming a gate electrode over a second portion of the gate dielectric layer; removing a first portion of the gate dielectric layer; and forming a source region and a drain region under the gate dielectric layer.
Claim 7
Dependent Claim
12 words
The method of claim 5 , wherein the gate electrode comprises silicon.
Claim 8
Dependent Claim
12 words
The method of claim 1 , further comprising flowing a second precursor.
Claim 9
Dependent Claim
29 words
The method of claim 7 , wherein the second precursor is selected from a group consisting of: O 2 , H 2 O, and H 2 O 2 .
Claim 10
Dependent Claim
19 words
The method of claim 7 , wherein the flowing the second precursor occurs after the flowing the first precursor.
Claim 11
Dependent Claim
18 words
The method of claim 9 , further comprising purging the reaction chamber after the flowing the first precursor.
Claim 12
Dependent Claim
18 words
The method of claim 10 , further comprising purging the reaction chamber after the flowing the second precursor.
Claim 13
Dependent Claim
18 words
The method of claim 11 , wherein the forming the dielectric is performed by atomic layer deposition (ALD).
Claim 14
Dependent Claim
18 words
The method of claim 7 , wherein the flowing the second precursor occurs while flowing the first precursor.
Claim 15
Dependent Claim
18 words
The method of claim 13 , wherein the forming the dielectric is performed by chemical vapor deposition (CVD).
Claim 16
Dependent Claim
29 words
The method of claim 1 , wherein the temperature and pressure of the reaction chamber is chosen at a temperature and pressure where sublimation of the first precursor occurs.
Claim 17
Dependent Claim
21 words
The method of claim 1 , wherein the first precursor is mixed with a solvent prior to flowing over the substrate.
Claim 18
Dependent Claim
24 words
The method of claim 16 , wherein the forming the dielectric is performed by direct liquid injection of the first precursor and the solvent.
Claim 19
Dependent Claim
19 words
The method of claim 1 , wherein before the flowing the first precursor, the first precursor is a solid.
Claim 20
Dependent Claim
18 words
The method of claim 1 , wherein the method of forming a semiconductor device is a batch process.
Claim 21
Dependent Claim
12 words
The method of claim 1 , wherein the semiconductor substrate comprises silicon.
Claim 22
Independent Claim
39 words
A method of forming a semiconductor device, comprising: placing a semiconductor substrate into a reaction chamber; and forming a dielectric layer over the semiconductor substrate comprising flowing a first precursor comprising hafnium tetraiodide and a second precursor comprising oxygen.
Claim 23
Independent Claim
39 words
A method of forming a semiconductor device, comprising: placing a semiconductor substrate into a reaction chamber; and forming a dielectric layer over the semiconductor substrate comprising flowing a first precursor comprising hafnium tetraiodide and a second precursor comprising oxygen.
Claim 24
Dependent Claim
14 words
The method of claim 21 wherein the first and second precursors are flowed alternately.
Claim 25
Dependent Claim
15 words
The method of claim 21 , wherein the first and second precursors are flowed contemporaneously.
Claim 26
Independent Claim
73 words
A method of forming a hafnium-containing layer over a semiconductor substrate, comprising: inserting the semiconductor substrate in a reaction chamber; providing a solid material comprising hafnium and iodine; causing sublimation of a surface of the solid material to provide a gas containing hafnium and iodine; transporting the gas containing hafnium and iodine to the reaction chamber; and inserting the gas containing hafnium and iodine into the reaction chamber to form a hafnium-containing layer.
Claim 27
Independent Claim
73 words
A method of forming a hafnium-containing layer over a semiconductor substrate, comprising: inserting the semiconductor substrate in a reaction chamber; providing a solid material comprising hafnium and iodine; causing sublimation of a surface of the solid material to provide a gas containing hafnium and iodine; transporting the gas containing hafnium and iodine to the reaction chamber; and inserting the gas containing hafnium and iodine into the reaction chamber to form a hafnium-containing layer.
Claim 28
Dependent Claim
19 words
The method of claim 24 wherein the solid material and the gas containing hafnium and iodine is hafnium tetraiodide.
References Cited (Backward Citations)
US4015281A
Cited
US5480524A
Cited
US5355011A
Cited
US5990516A
Cited
US5963810A
Cited
US20010013629A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-02-18 | 2005-08-20 | 2006-02-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-02-18 | 2009-08-20 | 2010-02-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-02-18 | 2013-08-20 | 2014-02-19 | $7700.00 | Window Closed / Lapsed |