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US5963810A
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Semiconductor device having nitrogen enhanced high permittivity gate insulating layer and fabrication thereof
Assignee: Advanced Micro Devices Inc
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Filing: 1997-12-18
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Granted: 1999-10-05
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Expires: 2017-12-18
Abstract
Abstract A semiconductor device having a nitrogen enhanced high permittivity gate insulating layer and a process for manufacturing such a device is provided. Consistent with one embodiment, a high permittivity gate insulating layer is formed over a substrate using a nitrogen bearing gas. The gate insulating layer has a dielectric constant of at least 20. At least one gate electrode is formed over the high permittivity gate insulating layer. An optional nitride capping layer can be formed between the high permittivity gate insulating layer and the gate electrode. The nitrogen bearing gas may include one or more nitrogen bearing species, such as NO, NF 3 or N2, for example. The use of nitrogen in the formation of a high permittivity gate insulating layer can, for example, reduce oxidation of the high permittivity layer and increase the ability to control the characteristics of the gate insulating layer.
Inventors
- 👤 Mark I. Gardner
- 👤 Mark C. Gilmer
- 👤 Thomas E. Spikes, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:13
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01342; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D64/01344; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/691; H10D64/693
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
48 words
A process of forming a semiconductor device, comprising: forming a high permittivity gate insulating layer over a substrate using a nitrogen bearing gas, the gate insulating layer having a dielectric constant at least 20; and forming at least one gate electrode over the high permittivity gate insulating layer.
Claim 2
Dependent Claim
48 words
A process of forming a semiconductor device, comprising: forming a high permittivity gate insulating layer over a substrate using a nitrogen bearing gas, the gate insulating layer having a dielectric constant at least 20; and forming at least one gate electrode over the high permittivity gate insulating layer.
Claim 3
Dependent Claim
30 words
The process of claim 1, wherein forming the high permittivity gate insulating layer further includes forming a nitrogen bearing layer between the high permittivity gate insulating layer and the substrate.
Claim 4
Dependent Claim
15 words
The process of claim 2, wherein the nitrogen bearing layer is a nitrogen bearing oxide.
Claim 5
Dependent Claim
22 words
The process of claim 1, further including forming a nitride layer between the high permittivity gate insulating layer and the gate electrode.
Claim 6
Dependent Claim
18 words
The process of claim 4, wherein the nitride layer and high permittivity gate insulating layer are formed in-situ.
Claim 7
Dependent Claim
47 words
The process of claim 5, wherein: forming the high permittivity gate insulating layer includes depositing a high permittivity material in a reaction chamber using jet vapor deposition techniques; and forming the nitride layer includes depositing a nitride in the same reaction chamber using jet vapor deposition techniques.
Claim 8
Dependent Claim
24 words
The process of claim 6, further including purging the reaction chamber between forming the high permittivity gate insulating layer and forming the nitride layer.
Claim 9
Dependent Claim
14 words
The process of claim 4, wherein the gate electrode is formed from a silicon.
Claim 10
Dependent Claim
14 words
The process of claim 1, wherein the gate electrode is formed from a metal.
Claim 11
Dependent Claim
22 words
The process of claim 1, wherein forming the high permittivity gate insulating layer includes metal-organic chemical deposition of a high permittivity material.
Claim 12
Dependent Claim
20 words
The process of claim 1, wherein the high permittivity layer has a thickness ranging from about 100 to 3000 angstroms.
Claim 13
Dependent Claim
16 words
The process of claim 1, wherein the high permittivity gate insulating layer is formed from PZN.
Claim 14
Dependent Claim
16 words
The process of claim 1, wherein the high permittivity gate insulating layer is formed from PST.
Claim 15
Dependent Claim
12 words
The process of claim 1, wherein the nitrogen bearing gas includes NO.
Claim 16
Dependent Claim
23 words
The process of claim 1, wherein the nitrogen bearing gas includes one or more of NO, NF 3 , and N 2 .
Claim 17
Dependent Claim
67 words
A process of fabricating a semiconductor device, comprising: forming a layer of nitride over a substrate by sputter deposition in a reaction chamber; forming a high permittivity gate insulating layer over the nitride layer by sputter deposition using the same reaction chamber, the gate insulating layer having a dielectric constant at least 20; and forming at least one gate electrode over the high permittivity gate insulating layer.
Claim 18
Dependent Claim
67 words
A process of fabricating a semiconductor device, comprising: forming a layer of nitride over a substrate by sputter deposition in a reaction chamber; forming a high permittivity gate insulating layer over the nitride layer by sputter deposition using the same reaction chamber, the gate insulating layer having a dielectric constant at least 20; and forming at least one gate electrode over the high permittivity gate insulating layer.
Claim 19
Dependent Claim
24 words
The process of claim 16, further including purging the reaction chamber between forming the high permittivity gate insulating layer and forming the nitride layer.
Claim 20
Dependent Claim
25 words
The process of claim 16, further including forming a nitride capping layer over the high permittivity gate insulating layer prior to forming the gate electrode.
Claim 21
Dependent Claim
15 words
The process of claim 18, wherein the nitride capping layer is formed by sputter deposition.
Claim 22
Dependent Claim
27 words
The process of claim 18, wherein the first layer of nitride, high permittivity gate insulating layer and nitride capping layer are deposited in the same reaction chamber.
References Cited (Backward Citations)
US5834353A
Cited
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