US6548424B2
Expired / Lapsed
US
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Process for producing oxide thin films
Assignee: ASM IP Holding BV
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Filing: 2001-04-16
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Granted: 2003-04-15
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Expires: 2021-04-16
Abstract
Abstract This invention concerns a process for producing oxide thin film on a substrate by an ALD type process. According to the process, alternating vapor-phase pulses of at least one metal source material, and at least one oxygen source material are fed into a reaction space and contacted with the substrate. According to the invention, an yttrium source material and a zirconium source material are alternately used as the metal source material so as to form an yttrium-stabilized zirconium oxide (YSZ) thin film on a substrate.
Inventors
- 👤 Matti Putkonen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 01:35
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/405; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45531; C23C16/45553; H01; H01M; H01M8/00; H01M8/10; H01M8/12; H01M8/124; H01M8/1246; H01M8/1253; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01342; H10D64/01346; H10D64/60; H10D64/66; H10D64/68; H10D64/691; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69395; H10P14/69396; H10P14/69397; Y; Y02; Y02E; Y02E60/00; Y02E60/30; Y02E60/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
98 words
A method for producing oxide thin film on a substrate in a reaction space by an ALD-type process, said method comprising: alternately feeding into said reaction space vapor phase pulses of a first metal source material, a second metal source material, and at least one oxygen source material capable of forming an oxide with the first metal source material and the second metal source material, wherein said first metal source material is a yttrium source material and said second metal source material is a zirconium source material, thereby forming a yttrium-stabilized zirconium oxide thin film on the substrate.
Claim 2
Independent Claim
98 words
A method for producing oxide thin film on a substrate in a reaction space by an ALD-type process, said method comprising: alternately feeding into said reaction space vapor phase pulses of a first metal source material, a second metal source material, and at least one oxygen source material capable of forming an oxide with the first metal source material and the second metal source material, wherein said first metal source material is a yttrium source material and said second metal source material is a zirconium source material, thereby forming a yttrium-stabilized zirconium oxide thin film on the substrate.
Claim 3
Dependent Claim
18 words
The method of claim 1 , wherein the yttrium-stabilized zirconium oxide thin film is grown at 250-500° C.
Claim 4
Dependent Claim
18 words
The method of claim 1 , wherein the yttrium-stabilized zirconium oxide thin film is grown at 275-450° C.
Claim 5
Dependent Claim
22 words
The method of claim 1 , wherein the yttrium-stabilized zirconium oxide thin film is grown at a temperature of approximately 275-325° C.
Claim 6
Dependent Claim
28 words
The method of claim 1 , wherein a ratio of pulses of the yttrium source material to pulses of the zirconium source material is from 1:10 to 10:1.
Claim 7
Dependent Claim
28 words
The method of claim 1 , wherein a ratio of pulses of the yttrium source material to pulses of the zirconium source material is from 1:5 to 5:1.
Claim 8
Dependent Claim
26 words
The method of claim 1 , wherein a ratio of pulses of the yttrium source material to pulses of the zirconium source material is approximately 1:1.
Claim 9
Dependent Claim
43 words
The process of claim 1 , wherein the oxygen source material is selected from the group consisting of water, oxygen, hydrogen peroxide, aqueous solution of hydrogen peroxide, ozone, oxides of nitrogen, halide-oxygen compounds, peracids (—O—O—H), alcohols, alkoxides, various oxygen-containing radicals and mixtures thereof.
Claim 10
Dependent Claim
71 words
The method of claim 1 , wherein a pulsing cycle comprises: feeding into the reaction space a vapor-phase pulse of the first metal source material or the second metal source material, wherein the vapor-phase pulse further comprises an inert carrier gas; purging the reaction space with an inert gas; feeding a vapor-phase pulse of said oxygen source material into the reaction space; and purging the reaction space with an inert gas.
Claim 11
Dependent Claim
54 words
The method of claim 1 , wherein the yttrium source material is selected from the group of compounds having the general formula (I) or (II): YX 3 (I) YX 3 B (II) wherein X is selected from the group consisting of β-diketonate, cyclopentadienyl, and derivatives of cyclopentadienyl, and B is a neutral adduct ligand.
Claim 12
Dependent Claim
80 words
The process of claim 1 , wherein the zirconium source material is selected from the group of compounds having the general formula (V): R 2 ZrX 2 (V) wherein R is cyclopentadienyl (C 5 H 5 ) or a derivative of cyclopentadienyl, and X is selected from the group consisting of a halide, hydrogen, a linear or branched C 1 -C 10 alkyl group, a linear or branched alkoxide group, an amino group (—NR 2 ), and an acetate group.
Claim 13
Dependent Claim
19 words
The method of claim 9 , wherein a first pulsing cycle is carried out with the yttrium source material.
Claim 14
Dependent Claim
19 words
The method of claim 9 , wherein a first pulsing cycle is carried out with the zirconium source material.
Claim 15
Dependent Claim
24 words
The method of claim 10 , wherein B is selected from the group consisting of a hydrocarbon, an oxygen-containing hydrocarbon, and a nitrogen-containing hydrocarbon.
Claim 16
Dependent Claim
34 words
The method of claim 10 , wherein the β-diketonate has the general formula (III): wherein R′ and R″ are independently selected from the group consisting of linear and branched C 1 -C 10 alkyls.
Claim 17
Dependent Claim
64 words
The method of claim 10 , wherein the derivative of cyclopentadienyl has the general formula (IV): C 5 H 5−y R′″ y (IV) wherein R′″ is selected from the group consisting of a linear or branched C 1 -C 10 alkyl group, an alkoxy group, an aryl group, an amino group, a cyano group, and a silyl group and y is an integer 1-5.
Claim 18
Dependent Claim
13 words
The method of claim 14 , wherein the oxygen-containing hydrocarbon is an ether.
Claim 19
Dependent Claim
24 words
The method of claim 14 , wherein the nitrogen-containing hydrocarbon is selected from the group consisting of bipyridine, phenanthroline, an amine, and a polyamine.
Claim 20
Dependent Claim
40 words
The method of claim 15 , wherein the linear or branched C 1 -C 10 alkyls are selected from the group consisting of —CH 3 , —C(CH 3 ) 3 , —CF 3 , and —C(CF 3 ) 3 .
Claim 21
Dependent Claim
64 words
The method of claim 11 , wherein the derivative of cyclopentadienyl has the general formula (IV): C 5 H 5−y R′″ y (IV) wherein R′″ is selected from the group consisting of a linear or branched C 1 -C 10 alkyl group, an alkoxy group, an aryl group, an amino group, a cyano group, and a silyl group, and y is an integer 1-5.
Claim 22
Dependent Claim
47 words
The method of claim 11 , wherein the ligands R are bridged and have the structure —R—A—R—, wherein A is selected from the group consisting of a methylene group, an alkyl group having the formula (CH 2 ) n , where n=2-6, and a substituted hydrocarbon group.
Claim 23
Dependent Claim
17 words
The process of claim 21 , wherein the substituted hydrocarbon group is C(CH 3 ) 2 .
Claim 24
Independent Claim
118 words
A method for producing oxide thin film on a substrate in a reaction space by an ALD-type process, said method comprising: alternately feeding into said reaction space vapor phase pulses of a first metal source material, a second metal source material, and at least one oxygen source material capable of forming an oxide with the first metal source material and the second metal source material, wherein said first metal source material is Y(thd) 3 , said second metal source material is dicyclopentadienyl zirconium dichloride (Cp 2 ZrCl 2 ), and the oxygen source material is O 3 or a mixture of O 2 and O 3 , thereby forming a yttrium-stabilized zirconium oxide thin film on the substrate.
Claim 25
Independent Claim
118 words
A method for producing oxide thin film on a substrate in a reaction space by an ALD-type process, said method comprising: alternately feeding into said reaction space vapor phase pulses of a first metal source material, a second metal source material, and at least one oxygen source material capable of forming an oxide with the first metal source material and the second metal source material, wherein said first metal source material is Y(thd) 3 , said second metal source material is dicyclopentadienyl zirconium dichloride (Cp 2 ZrCl 2 ), and the oxygen source material is O 3 or a mixture of O 2 and O 3 , thereby forming a yttrium-stabilized zirconium oxide thin film on the substrate.
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