US6207589B1
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Method of forming a doped metal oxide dielectric film
Assignee: Sharp Laboratories of America Inc
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Filing: 2000-02-29
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Granted: 2001-03-27
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Expires: 2020-02-29
Abstract
Abstract A high-k dielectric film is provided which remains amorphous at relatively high annealing temperatures. The high-k dielectric film is a metal oxide of either Zr or Hf, doped with a trivalent metal, such as Al. Because the film resists the formation of a crystalline structure, interfaces to adjacent films have fewer irregularities. When used as a gate dielectric, the film can be made thin to support smaller transistor geometries, while the surface of the channel region can be made smooth to support high electron mobility. Also provided are CVD, sputtering, and evaporation deposition methods for the above-mentioned, trivalent metal doped high dielectric films.
Inventors
- 👤 Yanjun Ma
- 👤 Yoshi Ono
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 14:57
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01342; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/691; H10D84/02; H10D84/03; H10D84/038; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
108 words
In the fabrication of an integrated circuit (IC) having a surface, a method of forming a doped metal oxide film on the IC surface comprising the steps of: a) establishing an atmosphere including oxygen; b) sputtering at least one target metal including a metal selected from the group consisting of Zr and Hf, and including a trivalent metal on the IC silicon surface; c) in response to Steps a) and b), forming the doped metal oxide film; and d) annealing at a temperature in the range of approximately 400 and 800 degrees C, whereby a thin film having a high dielectric constant and good barrier properties is formed.
Claim 2
Dependent Claim
108 words
In the fabrication of an integrated circuit (IC) having a surface, a method of forming a doped metal oxide film on the IC surface comprising the steps of: a) establishing an atmosphere including oxygen; b) sputtering at least one target metal including a metal selected from the group consisting of Zr and Hf, and including a trivalent metal on the IC silicon surface; c) in response to Steps a) and b), forming the doped metal oxide film; and d) annealing at a temperature in the range of approximately 400 and 800 degrees C, whereby a thin film having a high dielectric constant and good barrier properties is formed.
Claim 3
Dependent Claim
42 words
The method as in claim 1 wherein a silicon IC surface is provided, and comprising a further step, preceding Step c), of: b 1 ) establishing an IC silicon surface temperature in the range of approximately room temperature and 400 degrees C.
Claim 4
Dependent Claim
50 words
The method as in claim 1 in which Step a) includes the atmosphere including argon (Ar), in which the ratio of O 2 to Ar is in the range of approximately 5 to 25%, and in which the pressure is in the range of approximately 1 to 10 millitorr (mT).
Claim 5
Dependent Claim
47 words
The method as in claim 1 in which Step d) includes establishing an atmosphere including elements selected from the group consisting of Ar, N 2 , N 2 :H 2 forming gas, O 2 , H 2 O, N 2 O, NO, no gas, and oxygen plasma.
Claim 6
Dependent Claim
27 words
The method as in claim 1 in which Step b) includes a trivalent metal selected from the group consisting of aluminum (Al), scandium (Sc), and lanthanum (La).
Claim 7
Dependent Claim
39 words
The method as in claim 1 in which Step b) includes co-sputtering with separate targets including a first target of a metal selected from the group consisting of Zr and Hf, and a second target including a trivalent metal.
Claim 8
Dependent Claim
125 words
In the fabrication of an integrated circuit (IC) having a surface, a method of forming a doped metal oxide film comprising the steps of: a) preparing at least one precursor including a metal selected from the group consisting of Zr and Hf, and a trivalent metal; b) vaporizing the at least one precursor; c) establishing an atmosphere including oxygen; d) decomposing the precursor on the IC surface to deposit, by chemical vapor deposition (CVD), an alloy film including a metal selected from the group consisting of Zr and Hf, a trivalent metal, and oxygen; and e) annealing at a temperature in the range of approximately 400 to 800 degrees C, whereby a thin film having a high dielectric constant and good barrier properties is formed.
Claim 9
Dependent Claim
125 words
In the fabrication of an integrated circuit (IC) having a surface, a method of forming a doped metal oxide film comprising the steps of: a) preparing at least one precursor including a metal selected from the group consisting of Zr and Hf, and a trivalent metal; b) vaporizing the at least one precursor; c) establishing an atmosphere including oxygen; d) decomposing the precursor on the IC surface to deposit, by chemical vapor deposition (CVD), an alloy film including a metal selected from the group consisting of Zr and Hf, a trivalent metal, and oxygen; and e) annealing at a temperature in the range of approximately 400 to 800 degrees C, whereby a thin film having a high dielectric constant and good barrier properties is formed.
Claim 10
Dependent Claim
41 words
The method as in claim 7 wherein a silicon IC surface is provided, and comprising the further step, preceding Step d), of: c 1 ) establishing an IC silicon surface temperature in the range of approximately 300 and 500 degrees C.
Claim 11
Dependent Claim
50 words
The method as in claim 7 in which Step c) includes the atmosphere including argon (Ar), in which the ratio of O 2 to Ar is in the range of approximately 5 to 25%, and in which the pressure is in the range of approximately 1 to 10 torr (T).
Claim 12
Dependent Claim
47 words
The method as in claim 7 in which Step e) includes establishing an atmosphere including elements selected from the group consisting of Ar, N 2 , N 2 :H 2 forming gas, O 2 , H 2 O, N 2 O, NO, no gas, and oxygen plasma.
Claim 13
Dependent Claim
27 words
The method as in claim 7 in which Step a) includes a trivalent metal selected from the group consisting of aluminum (Al), scandium (Sc), and lanthanum (La).
Claim 14
Dependent Claim
39 words
The method as in claim 7 in which Step a) comprises a first precursor including a metal selected from the group consisting of Zr and Hf, and in which Step a) comprises a second precursor including a trivalent metal.
Claim 15
Dependent Claim
167 words
In the fabrication of an integrated circuit (IC) having a silicon surface, a method of forming a doped metal oxide film comprising the steps of: a) preparing at least one crucible including a metal selected from the group consisting of Zr and Hf, and a trivalent metal; b) establishing a vacuum atmosphere; c) heating the at least one crucible to a crucible temperature in the range of approximately 1000 and 2000 degrees C, to evaporate the metals prepared in Step a); d) in response to Steps a) through c), depositing an alloy film including a metal selected from the group consisting of Zr and Hf, and a trivalent metal; and e) annealing in an atmosphere including oxygen at a temperature in the range of approximately 400 to 800 degrees C to form an alloy film including a metal selected from the group consisting of Zr and Hf, a trivalent metal, and oxygen, whereby a thin film having a high dielectric constant and good barrier properties is formed.
Claim 16
Dependent Claim
167 words
In the fabrication of an integrated circuit (IC) having a silicon surface, a method of forming a doped metal oxide film comprising the steps of: a) preparing at least one crucible including a metal selected from the group consisting of Zr and Hf, and a trivalent metal; b) establishing a vacuum atmosphere; c) heating the at least one crucible to a crucible temperature in the range of approximately 1000 and 2000 degrees C, to evaporate the metals prepared in Step a); d) in response to Steps a) through c), depositing an alloy film including a metal selected from the group consisting of Zr and Hf, and a trivalent metal; and e) annealing in an atmosphere including oxygen at a temperature in the range of approximately 400 to 800 degrees C to form an alloy film including a metal selected from the group consisting of Zr and Hf, a trivalent metal, and oxygen, whereby a thin film having a high dielectric constant and good barrier properties is formed.
Claim 17
Dependent Claim
74 words
The method as in claim 13 in which Step a) includes a first crucible for the metal selected from the group of Zr and Hf, and a second crucible for the trivalent metal, and in which Step c) includes heating the first crucible to a temperature in the range of approximately 1000 and 2000 degrees C, and heating the second crucible to a temperature in the range of approximately 1000 and 2000 degrees C.
Claim 18
Dependent Claim
47 words
The method as in claim 13 in which Step e) includes establishing an atmosphere including elements selected from the group consisting of Ar, N 2 , N 2 :H 2 forming gas, O 2 , H 2 O, N 2 O, NO, no gas, and oxygen plasma.
Claim 19
Dependent Claim
90 words
The method as in claim 15 in which Step e) includes sub-steps as follows: e 1 ) annealing in an atmosphere including oxygen at a temperature in the range of approximately 400 and 800 degrees C; and e 1 ) annealing in an atmosphere including elements selected from the group consisting of Ar, N 2 , N 2 :H 2 forming gas, O 2 , H 2 O, N 2 O, NO, no gas, and oxygen plasma, at a temperature in the range of approximately 400 and 800 degrees C.
Claim 20
Dependent Claim
27 words
The method as in claim 13 in which Step a) includes a trivalent metal selected from the group consisting of aluminum (Al), scandium (Sc), and lanthanum (La).
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-03-26 | 2004-09-25 | 2005-03-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-03-26 | 2008-09-25 | 2009-03-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-03-26 | 2012-09-25 | 2013-03-27 | $7700.00 | Window Closed / Lapsed |