US6060755A
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Aluminum-doped zirconium dielectric film transistor structure and deposition method for same
Assignee: Sharp Corp
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Filing: 1999-07-19
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Granted: 2000-05-09
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Expires: 2019-07-19
Abstract
Abstract A high-k dielectric film is provided which remains amorphous at relatively high annealing temperatures. The high-k dielectric film is a metal oxide of either Zr or Hf, doped with a trivalent metal, such as Al. Because the film resists the formation of a crystalline structure, interfaces to adjacent films have fewer irregularities. When used as a gate dielectric, the film can be made thin to support smaller transistor geometries, while the surface of the channel region can be made smooth to support high electron mobility. Also provided are CVD, sputtering, and evaporation deposition methods for the above-mentioned, trivalent metal doped high dielectric films.
Inventors
- 👤 Yanjun Ma
- 👤 Yoshi Ono
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 03:51
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01342; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/691; H10D84/02; H10D84/03; H10D84/038; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
40 words
A thin film having a high dielectric constant, with respect to silicon dioxide, comprising: a trivalent metal; a metal selected from the group consisting of zirconium (Zr) and hafnium (Hf); and oxygen, whereby an amorphous high dielectric film is formed.
Claim 2
Dependent Claim
40 words
A thin film having a high dielectric constant, with respect to silicon dioxide, comprising: a trivalent metal; a metal selected from the group consisting of zirconium (Zr) and hafnium (Hf); and oxygen, whereby an amorphous high dielectric film is formed.
Claim 3
Dependent Claim
26 words
The thin film as in claim 1 in which said trivalent metal is selected from the group consisting of aluminum (Al), scandium (Sc), and lanthanum (La).
Claim 4
Dependent Claim
24 words
The thin film as in claim 1 in which the thin film has a thickness in the range of approximately 20 and 200 Å.
Claim 5
Dependent Claim
24 words
The thin film as in claim 1 in which the thin film has a dielectric constant in the range of approximately 10 to 25.
Claim 6
Dependent Claim
21 words
The thin film as in claim 1 in which the percentage of Al in the film does not exceed approximately 50%.
Claim 7
Dependent Claim
19 words
The thin film as in claim 5 in which the percentage of Al in the film is approximately 25%.
Claim 8
Dependent Claim
66 words
A MOSFET transistor comprising: a gate electrode; a channel region having a top surface underlying said gate electrode; and a gate dielectric film interposed between said gate electrode and said channel region top surface, having a high dielectric constant relative to silicon dioxide, including a metal selected from the group consisting of zirconium (Zr) and hafnium (Hf), and including oxygen, and further including a trivalent metal.
Claim 9
Dependent Claim
66 words
A MOSFET transistor comprising: a gate electrode; a channel region having a top surface underlying said gate electrode; and a gate dielectric film interposed between said gate electrode and said channel region top surface, having a high dielectric constant relative to silicon dioxide, including a metal selected from the group consisting of zirconium (Zr) and hafnium (Hf), and including oxygen, and further including a trivalent metal.
Claim 10
Dependent Claim
29 words
The transistor as in claim 7 in which said gate dielectric film includes a trivalent metal selected from the group consisting of aluminum (Al), scandium (Sc), and lanthanum (La).
Claim 11
Dependent Claim
24 words
The transistor as in claim 8 in which the percentage of Al in the film is in the range of approximately 0 to 50%.
Claim 12
Dependent Claim
18 words
The transistor as in claim 9 in which the percentage of Al in the film is approximately 25%.
Claim 13
Dependent Claim
24 words
The transistor as in claim 7 in which said gate dielectric film has a thickness in the range of approximately 20 and 200 Å.
Claim 14
Dependent Claim
24 words
The transistor as in claim 7 in which said gate dielectric film has a dielectric constant in the range of approximately 10 to 25.
Claim 15
Dependent Claim
65 words
The transistor as in claim 7 further comprising: an interface barrier having a thickness in the range of approximately 2 to 5 Å, interposed between said channel region and said gate dielectric film, said interface barrier including materials selected from the group consisting of silicon nitride and silicon oxynitride, whereby said channel region top surface is smoother to increase the electron mobility of the MOSFET.
References Cited (Backward Citations)
US4520413A
Cited
US5565691A
Cited
US5894159A
Cited
US5780922A
Cited
US5929467A
Cited
US5930611A
Cited
US5952700A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-05-09 | 2003-11-08 | 2004-05-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-05-09 | 2007-11-08 | 2008-05-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-05-09 | 2011-11-08 | 2012-05-09 | $7700.00 | Window Closed / Lapsed |