US6995081B2 — Systems and methods for forming tantalum silicide…

Claim 1

Independent Claim 159 words

A method of forming a layer on a substrate, the method comprising: providing a substrate comprising a silicon-containing surface; providing a vapor comprising one or more tantalum precursor compounds of the formula TaY 5 (Formula I), wherein each Y is independently a halogen atom; providing a vapor comprising one or more silicon precursor compounds; and directing the vapors comprising the one or more tantalum precursor compounds and the one or more silicon precursor compounds to the substrate to form a tantalum silicide layer on one or more surfaces of the substrate, wherein the vapor comprising the one or more precursor compounds of the Formula I is directed to the substrate and allowed to chemisorb on the silicon-containing surface, wherein providing the vapors and directing the vapors is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles, with the proviso that the method does not include providing a vapor comprising one or more nitrogen precursor compounds.

Claim 2

Independent Claim 159 words

A method of forming a layer on a substrate, the method comprising: providing a substrate comprising a silicon-containing surface; providing a vapor comprising one or more tantalum precursor compounds of the formula TaY 5 (Formula I), wherein each Y is independently a halogen atom; providing a vapor comprising one or more silicon precursor compounds; and directing the vapors comprising the one or more tantalum precursor compounds and the one or more silicon precursor compounds to the substrate to form a tantalum silicide layer on one or more surfaces of the substrate, wherein the vapor comprising the one or more precursor compounds of the Formula I is directed to the substrate and allowed to chemisorb on the silicon-containing surface, wherein providing the vapors and directing the vapors is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles, with the proviso that the method does not include providing a vapor comprising one or more nitrogen precursor compounds.

Claim 3

Dependent Claim 12 words

The method of claim 1 wherein each Y is a fluorine atom.

Claim 4

Dependent Claim 14 words

The method of claim 1 wherein the silicon precursor compound is silane or disilane.

Claim 5

Dependent Claim 18 words

The method of claim 1 wherein the silicon precursor compound is a halogenated silane or an organic silane.

Claim 6

Dependent Claim 25 words

The method of claim 4 wherein the silicon precursor compound is a halogenated silane of the formula SiH r Cl s wherein r=1–4 and s=4−r.

Claim 7

Dependent Claim 32 words

The method of claim 4 wherein the silicon precursor compound is an organic silane of the formula SiH p R q wherein p=1–4, q=4−p, and each R is independently an organic group.

Claim 8

Dependent Claim 20 words

The method of claim 1 wherein the formed layer has a thickness of about 10 Å to about 100 Å.

Claim 9

Dependent Claim 14 words

The method of claim 1 wherein the formed layer is a diffusion barrier layer.

Claim 10

Dependent Claim 19 words

The method of claim 1 wherein the temperature of the substrate is about 25° C. to about 400° C.

Claim 11

Dependent Claim 42 words

The method of claim 1 further comprising providing a vapor comprising one or more metal-containing precursor compounds having a formula different than Formula I and directing the vapor comprising the precursor compounds having a formula different than Formula I to the substrate.

Claim 12

Independent Claim 173 words

A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly comprising a silicon-containing surface; providing a vapor comprising one or more tantalum precursor compounds of the formula TaY 5 (Formula I), wherein each Y is independently a halogen atom; providing a vapor comprising one or more silicon precursor compounds; and directing the vapors comprising the one or more tantalum precursor compounds and the one or more silicon precursor compounds to the semiconductor substrate or substrate assembly to form a tantalum suicide layer on one or more surfaces of the semiconductor substrate or substrate assembly, wherein the vapor comprising the one or more precursor compounds of the Formula I is directed to the semiconductor substrate or substrate assembly and allowed to chemisorb on the silicon-containing surface, wherein providing the vapors and directing the vapors is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles, with the proviso that the method does not include providing a vapor comprising one or more nitrogen precursor compounds.

Claim 13

Independent Claim 173 words

A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly comprising a silicon-containing surface; providing a vapor comprising one or more tantalum precursor compounds of the formula TaY 5 (Formula I), wherein each Y is independently a halogen atom; providing a vapor comprising one or more silicon precursor compounds; and directing the vapors comprising the one or more tantalum precursor compounds and the one or more silicon precursor compounds to the semiconductor substrate or substrate assembly to form a tantalum suicide layer on one or more surfaces of the semiconductor substrate or substrate assembly, wherein the vapor comprising the one or more precursor compounds of the Formula I is directed to the semiconductor substrate or substrate assembly and allowed to chemisorb on the silicon-containing surface, wherein providing the vapors and directing the vapors is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles, with the proviso that the method does not include providing a vapor comprising one or more nitrogen precursor compounds.

Claim 14

Dependent Claim 16 words

The method of claim 11 wherein the semiconductor substrate or substrate assembly is a silicon wafer.

Claim 15

Dependent Claim 12 words

The method of claim 11 wherein each Y is a fluorine atom.

Claim 16

Dependent Claim 14 words

The method of claim 11 wherein the silicon precursor compound is silane or disilane.

Claim 17

Dependent Claim 18 words

The method of claim 11 wherein the silicon precursor compound is a halogenated silane or an organic silane.

Claim 18

Dependent Claim 25 words

The method of claim 15 wherein the silicon precursor compound is a halogenated silane of the formula SiH r Cl s wherein r=1–4 and s=4−r.

Claim 19

Dependent Claim 32 words

The method of claim 15 wherein the silicon precursor compound is an organic silane of the formula SiH p R q wherein p=1–4, q=4−p, and each R is independently an organic group.

Claim 20

Dependent Claim 20 words

The method of claim 11 wherein the formed layer has a thickness of about 10 Å to about 100 Å.

Claim 21

Dependent Claim 14 words

The method of claim 11 wherein the formed layer is a diffusion barrier layer.

Claim 22

Dependent Claim 23 words

The method of claim 11 wherein the temperature of the semiconductor substrate or substrate assembly is about 25° C. to about 400° C.

Claim 23

Dependent Claim 29 words

The method of claim 11 wherein the semiconductor substrate or substrate assembly is in a deposition chamber having a pressure of about 10 −4 torr to about 1 torr.

Claim 24

Dependent Claim 40 words

The method of claim 11 wherein during the atomic layer deposition process, the tantalum silicide layer is formed by alternately introducing the one or more vaporized precursor compounds and one or more vaporized silicon precursor compounds during each deposition cycle.

Claim 25

Dependent Claim 45 words

The method of claim 11 further comprising providing a vapor comprising one or more metal-containing precursor compounds having a formula different than Formula I and directing the vapor comprising the compounds having a formula different than Formula I to the semiconductor substrate or substrate assembly.

Claim 26

Independent Claim 185 words

A method of manufacturing a memory device, the method comprising: providing a substrate comprising a silicon-containing surface; providing a vapor comprising one or more tantalum precursor compounds of the formula TaY 5 (Formula I), wherein each Y is independently a halogen atom; directing the vapor comprising the one or more precursor compounds of the Formula I to the substrate and allowing the one or more compounds to chemisorb on the silicon-containing surface; providing a vapor comprising one or more silicon precursor compounds; directing the vapor comprising the one or more silicon precursor compounds to the substrate with the chemisorbed compounds thereon to form a tantalum silicide barrier layer on the silicon-containing surface; providing a first electrode on the barrier layer; providing a high dielectric material over at least a portion of the first electrode; and providing a second electrode over the high dielectric material, wherein providing the vapors and directing the vapors is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles, with the proviso that the method does not include providing a vapor comprising one or more nitrogen precursor compounds.

Claim 27

Independent Claim 185 words

A method of manufacturing a memory device, the method comprising: providing a substrate comprising a silicon-containing surface; providing a vapor comprising one or more tantalum precursor compounds of the formula TaY 5 (Formula I), wherein each Y is independently a halogen atom; directing the vapor comprising the one or more precursor compounds of the Formula I to the substrate and allowing the one or more compounds to chemisorb on the silicon-containing surface; providing a vapor comprising one or more silicon precursor compounds; directing the vapor comprising the one or more silicon precursor compounds to the substrate with the chemisorbed compounds thereon to form a tantalum silicide barrier layer on the silicon-containing surface; providing a first electrode on the barrier layer; providing a high dielectric material over at least a portion of the first electrode; and providing a second electrode over the high dielectric material, wherein providing the vapors and directing the vapors is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles, with the proviso that the method does not include providing a vapor comprising one or more nitrogen precursor compounds.

Claim 28

Dependent Claim 15 words

The method of claim 24 wherein the substrate is a semiconductor substrate or substrate assembly.

Claim 29

Dependent Claim 44 words

The method of claim 24 further comprising providing a vapor comprising one or more metal-containing precursor compounds having a formula different than Formula I and directing the vapor comprising the one or more compounds having a formula different than Formula I to the substrate.

Claim 30

Dependent Claim 14 words

The method of claim 24 wherein the silicon precursor compound is silane or disilane.

Claim 31

Dependent Claim 18 words

The method of claim 24 wherein the silicon precursor compound is a halogenated silane or an organic silane.

Claim 32

Dependent Claim 25 words

The method of claim 28 wherein the silicon precursor compound is a halogenated silane of the formula SiH r Cl s wherein r=1–4 and s=4−r.

Claim 33

Dependent Claim 32 words

The method of claim 28 wherein the silicon precursor compound is an organic silane of the formula SiH p R q wherein p=1–4, q=4−p, and each R is independently an organic group.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2009-02-06	2009-08-08	2010-02-07	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2013-02-06	2013-08-08	2014-02-07	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2017-02-06	2017-08-08	2018-02-07	$7700.00	Window Closed / Lapsed

Systems and methods for forming tantalum silicide layers

Abstract

Inventors

Bibliographic Details

Claims Analysis

References Cited (Backward Citations)

USPTO Annuity & Maintenance Windows

Assigned Categories & Tags

Assign Category Tag