US6730164B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Systems and methods for forming strontium- and/or barium-containing layers
Assignee: Micron Technology Inc
•
Filing: 2002-08-28
•
Granted: 2004-05-04
•
Expires: 2022-08-28
Abstract
Abstract A method of forming (and apparatus for forming) a layer, such as a strontium titanate, barium titanate, or barium-strontium titanate layer, on a substrate by employing a vapor deposition method, particularly a multi-cycle atomic layer deposition process.
Inventors
- 👤 Brian A. Vaartstra
- 👤 Stefan Uhlenbrock
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:43
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/409; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45531; H10P14/66; H10P14/668; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10P14/69398
Claims Analysis
Total Claims: 68
Claim 1
Independent Claim
107 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a vapor comprising one or more Group IIA metal precursor compounds of the formula M(NRR′) 2 , wherein R and R′ are each independently an organic group and M is selected from the group consisting of barium, strontium, calcium, and magnesium; and directing the vapor comprising the one or more Group IIA metal precursor compounds to the semiconductor substrate or substrate assembly to form a metal-containing layer on a surface of the semiconductor substrate or substrate assembly using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 2
Independent Claim
107 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a vapor comprising one or more Group IIA metal precursor compounds of the formula M(NRR′) 2 , wherein R and R′ are each independently an organic group and M is selected from the group consisting of barium, strontium, calcium, and magnesium; and directing the vapor comprising the one or more Group IIA metal precursor compounds to the semiconductor substrate or substrate assembly to form a metal-containing layer on a surface of the semiconductor substrate or substrate assembly using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 3
Dependent Claim
16 words
The method of claim 1 wherein the semiconductor substrate or substrate assembly is a silicon wafer.
Claim 4
Dependent Claim
21 words
The method of claim 1 wherein the formed metal-containing layer has a thickness of about 10 Å to about 500 Å.
Claim 5
Dependent Claim
11 words
The method of claim 1 wherein M is strontium or barium.
Claim 6
Dependent Claim
15 words
The method of claim 1 wherein each R and R′ is independently a (C1-C10)organic group.
Claim 7
Dependent Claim
14 words
The method of claim 1 wherein the metal-containing layer is a metal oxide layer.
Claim 8
Dependent Claim
13 words
The method of claim 1 wherein the metal-containing layer is a dielectric layer.
Claim 9
Independent Claim
121 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a vapor comprising one or more Group IIA metal precursor compounds of the formula M(NRR′) 2 (Formula I), wherein R and R′ are each independently an organic group and M is selected from the group consisting of barium, strontium, calcium, and magnesium; providing one or more reaction gases; and directing the vapor comprising the one or more Group IIA metal precursor compounds and the one or more reaction gases to the semiconductor substrate or substrate assembly to form a metal-containing layer on a surface of the semiconductor substrate or substrate assembly using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 10
Independent Claim
121 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a vapor comprising one or more Group IIA metal precursor compounds of the formula M(NRR′) 2 (Formula I), wherein R and R′ are each independently an organic group and M is selected from the group consisting of barium, strontium, calcium, and magnesium; providing one or more reaction gases; and directing the vapor comprising the one or more Group IIA metal precursor compounds and the one or more reaction gases to the semiconductor substrate or substrate assembly to form a metal-containing layer on a surface of the semiconductor substrate or substrate assembly using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 11
Dependent Claim
40 words
The method of claim 8 further comprising providing a vapor comprising one or more metal-containing precursor compounds other than the compounds of Formula I and directing this vapor to the semiconductor substrate or substrate assembly to form a metal-containing layer.
Claim 12
Dependent Claim
70 words
The method of claim 9 wherein providing a vapor comprising one or more metal-containing precursor compounds other than the compounds of Formula I comprises providing a vapor comprising Ti(AR 1 x ) 4 , wherein: A is O, N, C(O), or OC(O); and R 1 is a (C1-C10)alkyl group, wherein two of the R 1 alkyl groups are optionally joined together to form an alkylene group; and n=1 or 2.
Claim 13
Dependent Claim
18 words
The method of claim 10 wherein the formed metal-containing layer is strontium titanate, barium titanate, or barium-strontium titanate.
Claim 14
Dependent Claim
11 words
The method of claim 8 wherein M is strontium or barium.
Claim 15
Dependent Claim
14 words
The method of claim 8 wherein the metal-containing layer is a metal oxide layer.
Claim 16
Dependent Claim
13 words
The method of claim 8 wherein the metal-containing layer is a dielectric layer.
Claim 17
Independent Claim
148 words
A method of manufacturing a semiconductor structure, wherein the method comprises: providing a semiconductor substrate or substrate assembly within a deposition chamber; providing a vapor comprising one or more Group IIA metal precursor compounds of the formula M(NRR′) 2 (Formula I), wherein R and R′ are each independently an organic group, and M is selected from the group consisting of barium, strontium, calcium, and magnesium; directing the vapor comprising the one or more precursor compounds of Formula I to the semiconductor substrate or substrate assembly and allowing the one or more compounds to chemisorb to one or more surfaces of the semiconductor substrate or substrate assembly; providing one or more reaction gases; directing the one or more reaction gases to the semiconductor substrate or substrate assembly with the chemisorbed species thereon to form a metal-containing layer on one or more surfaces of the semiconductor substrate or substrate assembly.
Claim 18
Independent Claim
148 words
A method of manufacturing a semiconductor structure, wherein the method comprises: providing a semiconductor substrate or substrate assembly within a deposition chamber; providing a vapor comprising one or more Group IIA metal precursor compounds of the formula M(NRR′) 2 (Formula I), wherein R and R′ are each independently an organic group, and M is selected from the group consisting of barium, strontium, calcium, and magnesium; directing the vapor comprising the one or more precursor compounds of Formula I to the semiconductor substrate or substrate assembly and allowing the one or more compounds to chemisorb to one or more surfaces of the semiconductor substrate or substrate assembly; providing one or more reaction gases; directing the one or more reaction gases to the semiconductor substrate or substrate assembly with the chemisorbed species thereon to form a metal-containing layer on one or more surfaces of the semiconductor substrate or substrate assembly.
Claim 19
Dependent Claim
45 words
The method of claim 15 wherein one or more inert carrier gases are introduced into the chamber with the vapor comprising the one or more compounds of Formula I, with the one or more reaction gases, or with both the vapor and the reaction gases.
Claim 20
Dependent Claim
38 words
The method of claim 15 wherein the reaction gas is selected from the group consisting of water vapor, oxygen, ozone, hydrogen peroxide, nitrous oxide, ammonia, organic amine, silane, hydrogen, hydrogen sulfide, hydrogen selenide, hydrogen telluride, and combinations thereof.
Claim 21
Dependent Claim
12 words
The method of claim 17 wherein the reaction gas is water vapor.
Claim 22
Dependent Claim
14 words
The method of claim 15 wherein the metal-containing layer is a metal oxide layer.
Claim 23
Dependent Claim
13 words
The method of claim 15 wherein the metal-containing layer is a dielectric layer.
Claim 24
Dependent Claim
53 words
The method of claim 15 further comprising providing a vapor comprising one or more metal-containing precursor compounds other than the compounds of Formula I and directing this vapor to the semiconductor substrate or substrate assembly to allow these compounds to chemisorb to one or more surfaces of the semiconductor substrate or substrate assembly.
Claim 25
Dependent Claim
70 words
The method of claim 21 wherein providing a vapor comprising one or more metal-containing precursor compounds other than the compounds of Formula I comprises providing a vapor comprising Ti(AR 1 x ) 4 , wherein: A is O, N, C(O), or OC(O); and R 1 is a (C1-C10)alkyl group, wherein two of the R 1 alkyl groups are optionally joined together to form an alkylene group; and n=1 or 2.
Claim 26
Dependent Claim
56 words
The method of claim 21 wherein the vapor comprising the one or more compounds of Formula I and the vapor comprising one or more compounds other than those of Formula I are directed to the semiconductor substrate or substrate assembly prior to directing the one or more reaction gases lo the semiconductor substrate or substrate assembly.
Claim 27
Dependent Claim
42 words
The method of claim 21 wherein the vapor comprising the one or more compounds of Formula I and the vapor comprising one or more compounds other than those of Formula I are directed to the semiconductor substrate or substrate assembly substantially simultaneously.
Claim 28
Dependent Claim
167 words
The method of claim 21 comprising: providing a vapor comprising one or more precursor compounds of Formula I and directing this vapor to the semiconductor substrate or substrate assembly and allowing the one or more compounds to chemisorb to one or more surfaces of the semiconductor substrate or substrate assembly; providing one or more reaction gases and directing the one or more reaction gases to the semiconductor substrate or substrate assembly with the chemisorbed species thereon; providing a vapor comprising one or more precursor compounds other than those of Formula I and directing this vapor to the semiconductor substrate or substrate assembly and allowing the one or more compounds to chemisorb to one or more surfaces of the semiconductor substrate or substrate assembly; and providing one or more reaction gases and directing the one or more reaction gases to the semiconductor substrate or substrate assembly with the chemisorbed species thereon to form a metal-containing layer on one or more surfaces of the semiconductor substrate or substrate assembly.
Claim 29
Dependent Claim
33 words
The method of claim 21 further comprising purging excess vapor comprising the one or more precursor compounds from the deposition chamber after chemisorption of the compounds onto the semiconductor substrate or substrate assembly.
Claim 30
Dependent Claim
14 words
The method of claim 26 wherein purging comprises purging with an inert carrier gas.
Claim 31
Dependent Claim
21 words
The method of claim 27 wherein the inert carrier gas is selected from the group consisting of nitrogen, helium, and argon.
Claim 32
Dependent Claim
31 words
The method of claim 15 wherein providing a vapor, directing the vapor, providing one or more reaction gases, and directing the one or more reaction gases is repeated at least once.
Claim 33
Dependent Claim
23 words
The method of claim 15 wherein the temperature of the semiconductor substrate or substrate assembly is about 25° C. to about 400° C.
Claim 34
Dependent Claim
19 words
The method of claim 15 wherein the deposition chamber pressure is about 10 −4 torr to about 1 torr.
Claim 35
Dependent Claim
31 words
The method of claim 15 wherein the Group IIA metal precursor compound is of the formula M[N(SiR″ 3 ) 2 ] 2 , wherein each R″ is independently a (C1-C3)alkyl moiety.
Claim 36
Dependent Claim
37 words
The method of claim 32 wherein the Group IIA metal precursor compound is selected from the group consisting of Ba[N(SiMe 3 ) 2 ] 2 and Sr[N(SiMe 3 ) 2 ] 2 , where Me is methyl.
Claim 37
Independent Claim
97 words
A method of forming a layer on a substrate, the method comprising: providing a substrate; providing a vapor comprising one or more Group IIA metal precursor compounds of the formula M(NRR′) 2 , wherein R and R′ are each independently an organic group and M is selected from the group consisting of barium, strontium, calcium, and magnesium; and directing the vapor comprising the one or more Group IIA metal precursor compounds to the substrate to form a metal-containing layer on a surface of the substrate using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 38
Independent Claim
97 words
A method of forming a layer on a substrate, the method comprising: providing a substrate; providing a vapor comprising one or more Group IIA metal precursor compounds of the formula M(NRR′) 2 , wherein R and R′ are each independently an organic group and M is selected from the group consisting of barium, strontium, calcium, and magnesium; and directing the vapor comprising the one or more Group IIA metal precursor compounds to the substrate to form a metal-containing layer on a surface of the substrate using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 39
Dependent Claim
11 words
The method of claim 34 wherein M is strontium or barium.
Claim 40
Dependent Claim
15 words
The method of claim 34 wherein each R and R′ is independently a (C1-C10)organic group.
Claim 41
Dependent Claim
14 words
The method of claim 34 wherein the metal-containing layer is a metal oxide layer.
Claim 42
Independent Claim
111 words
A method of forming a layer on a substrate, the method comprising: providing a substrate; providing a vapor comprising one or more Group IIA metal precursor compounds of the formula M(NRR′) 2 (Formula I), wherein R and R′ are each independently an organic group and M is selected from the group consisting of barium, strontium, calcium, and magnesium; providing one or more reaction gases; and directing the vapor comprising the one or more Group IIA metal precursor compounds and the one or more reaction gases to the substrate to form a metal-containing layer on a surface of the substrate using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 43
Independent Claim
111 words
A method of forming a layer on a substrate, the method comprising: providing a substrate; providing a vapor comprising one or more Group IIA metal precursor compounds of the formula M(NRR′) 2 (Formula I), wherein R and R′ are each independently an organic group and M is selected from the group consisting of barium, strontium, calcium, and magnesium; providing one or more reaction gases; and directing the vapor comprising the one or more Group IIA metal precursor compounds and the one or more reaction gases to the substrate to form a metal-containing layer on a surface of the substrate using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 44
Dependent Claim
36 words
The method of claim 38 further comprising providing a vapor comprising one or more metal-containing precursor compounds other than the compounds of Formula I and directing this vapor to the substrate to form a metal-containing layer.
Claim 45
Dependent Claim
70 words
The method of claim 39 wherein providing a vapor comprising one or more metal-containing precursor compounds other than the compounds of Formula I comprises providing a vapor comprising Ti(AR 1 x ) 4 , wherein: A is O, N, C(O), or OC(O); and R 1 is a (C1-C10)alkyl group, wherein two of the R 1 alkyl groups are optionally joined together to form an alkylene group; and n=1 or 2.
Claim 46
Dependent Claim
18 words
The method of claim 40 wherein the formed metal-containing layer is strontium titanate, barium titanate, or barium-strontium titanate.
Claim 47
Dependent Claim
11 words
The method of claim 38 wherein M is strontium or barium.
Claim 48
Dependent Claim
14 words
The method of claim 38 wherein the metal-containing layer is a metal oxide layer.
Claim 49
Independent Claim
131 words
A method of forming a layer on a substrate, wherein the method comprises: providing a substrate within a deposition chamber; providing a vapor comprising one or more Group IIA metal precursor compounds of the formula M(NRR′) 2 (Formula I), wherein R and R′ are each independently an organic group, and M is selected from the group consisting of barium, strontium, calcium, and magnesium; directing the vapor comprising the one or more precursor compounds of Formula I to the substrate and allowing the one or more compounds to chemisorb to one or more surfaces of the substrate; providing one or more reaction gases; and directing the one or more reaction gases to the substrate with the chemisorbed species thereon to form a metal-containing layer on one or more surfaces of the substrate.
Claim 50
Independent Claim
131 words
A method of forming a layer on a substrate, wherein the method comprises: providing a substrate within a deposition chamber; providing a vapor comprising one or more Group IIA metal precursor compounds of the formula M(NRR′) 2 (Formula I), wherein R and R′ are each independently an organic group, and M is selected from the group consisting of barium, strontium, calcium, and magnesium; directing the vapor comprising the one or more precursor compounds of Formula I to the substrate and allowing the one or more compounds to chemisorb to one or more surfaces of the substrate; providing one or more reaction gases; and directing the one or more reaction gases to the substrate with the chemisorbed species thereon to form a metal-containing layer on one or more surfaces of the substrate.
Claim 51
Dependent Claim
45 words
The method of claim 44 wherein one or more inert carrier gases are introduced into the chamber after the vapor comprising the one or more compounds of Formula I, after the one or more reaction gases, or after both the vapor and the reaction gases.
Claim 52
Dependent Claim
38 words
The method of claim 45 wherein the reaction gas is selected from the group consisting of water vapor, oxygen, ozone, hydrogen peroxide, nitrous oxide, ammonia, organic amine, silane, hydrogen, hydrogen sulfide, hydrogen selenide, hydrogen telluride, and combinations thereof.
Claim 53
Dependent Claim
12 words
The method of claim 46 wherein the reaction gas is water vapor.
Claim 54
Dependent Claim
14 words
The method of claim 45 wherein the metal-containing layer is a metal oxide layer.
Claim 55
Dependent Claim
45 words
The method of claim 44 further comprising providing a vapor comprising one or more metal-containing precursor compounds other than the compounds of Formula I and directing this vapor to the substrate to allow these compounds to chemisorb to one or more surfaces of the substrate.
Claim 56
Dependent Claim
70 words
The method of claim 49 wherein providing a vapor comprising one or more metal-containing precursor compounds other than the compounds of Formula I comprises providing a vapor comprising Ti(AR 1 x ) 4 , wherein: A is O, N, C(O), or OC(O); and R 1 is a (C1-C10)alkyl group, wherein two of the R 1 alkyl groups are optionally joined together to form an alkylene group; and n=1 or 2.
Claim 57
Dependent Claim
48 words
The method of claim 49 wherein the vapor comprising the one or more compounds of Formula I and the vapor comprising one or more compounds other than those of Formula I are directed to the substrate prior to directing the one or more reaction gases to the substrate.
Claim 58
Dependent Claim
38 words
The method of claim 49 wherein the vapor comprising the one or more compounds of Formula I and the vapor comprising one or more compounds other than those of Formula I are directed to the substrate substantially simultaneously.
Claim 59
Dependent Claim
139 words
The method of claim 49 comprising: providing a vapor comprising one or more precursor compounds of Formula I and directing this vapor to the substrate and allowing the one or more compounds to chemisorb to one or more surfaces of the substrate; providing one or more reaction gases and directing the one or more reaction gases to the substrate with the chemisorbed species thereon; providing a vapor comprising one or more precursor compounds other than those of Formula I and directing this vapor to the substrate and allowing the one or more compounds to chemisorb to one or more surfaces of the substrate; and providing one or more reaction gases and directing the one or more reaction gases to the substrate with the chemisorbed species thereon to form a metal-containing layer on one or more surfaces of the substrate.
Claim 60
Dependent Claim
29 words
The method of claim 49 further comprising purging excess vapor comprising the one or more precursor compounds from the deposition chamber after chemisorption of the compounds onto the substrate.
Claim 61
Dependent Claim
32 words
The method of claim 44 wherein the providing a vapor, directing the vapor, providing one or more reaction gases, and directing the one or more reaction gases is repeated at least once.
Claim 62
Dependent Claim
31 words
The method of claim 44 wherein the Group IIA metal precursor compound is of the formula M[N(SiR″ 3 ) 2 ] 2 , wherein each R″ is independently a (C1-C3)alkyl moiety.
Claim 63
Independent Claim
129 words
A method of manufacturing a memory device structure, the method comprising: providing a substrate having a first electrode thereon; providing one or more Group IIA metal precursor compounds of the formula M(NRR′) 4 , wherein R and R′ are each independently an organic group and M is selected from the group consisting of barium, strontium, calcium, and magnesium; vaporizing the one or more precursor compounds; directing the one or more vaporized precursor compounds to the substrate to chemisorb the compounds on the first electrode of the substrate; providing one or more reaction gases; directing the one or more reaction gases to the substrate with the chemisorbed compounds thereon to form a dielectric layer on the first electrode of the substrate; and forming a second electrode on the dielectric layer.
Claim 64
Independent Claim
129 words
A method of manufacturing a memory device structure, the method comprising: providing a substrate having a first electrode thereon; providing one or more Group IIA metal precursor compounds of the formula M(NRR′) 4 , wherein R and R′ are each independently an organic group and M is selected from the group consisting of barium, strontium, calcium, and magnesium; vaporizing the one or more precursor compounds; directing the one or more vaporized precursor compounds to the substrate to chemisorb the compounds on the first electrode of the substrate; providing one or more reaction gases; directing the one or more reaction gases to the substrate with the chemisorbed compounds thereon to form a dielectric layer on the first electrode of the substrate; and forming a second electrode on the dielectric layer.
Claim 65
Dependent Claim
31 words
The method of claim 57 wherein the Group IIA metal precursor compound is of the formula M[N(SiR″ 3 ) 2 ] 2 , wherein each R″ is independently a (C1-C3)alkyl moiety.
Claim 66
Dependent Claim
59 words
An atomic layer vapor deposition apparatus comprising: a deposition chamber having a substrate positioned therein; and one or more vessels comprising one or more Group IIA metal precursor compounds of the formula M(NRR′) 2 , wherein R and R′ are each independently an organic group and M is selected from the group consisting of barium, strontium, calcium, and magnesium.
Claim 67
Dependent Claim
59 words
An atomic layer vapor deposition apparatus comprising: a deposition chamber having a substrate positioned therein; and one or more vessels comprising one or more Group IIA metal precursor compounds of the formula M(NRR′) 2 , wherein R and R′ are each independently an organic group and M is selected from the group consisting of barium, strontium, calcium, and magnesium.
Claim 68
Dependent Claim
34 words
The apparatus of claim 59 wherein the Group IIA metal precursor compound is of the formula M[N(SiR″ 3 ) 2 ] 2 where M is strontium or barium and R″ is a (C1-C3)alkyl moiety.
References Cited (Backward Citations)
US5256244A
Cited
US5742322A
Cited
US6203613B1
Cited
US6335049B1
Cited
US6271094B1
Cited
US6342445B1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2007-05-04 | 2007-11-03 | 2008-05-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2011-05-04 | 2011-11-03 | 2012-05-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2015-05-04 | 2015-11-03 | 2016-05-04 | $7700.00 | Window Closed / Lapsed |