Patent US7196007B2 successfully refreshed from Google Patents.
US7196007B2
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Systems and methods of forming refractory metal nitride layers using disilazanes
Assignee: Micron Technology Inc
•
Filing: 2004-08-30
•
Granted: 2007-03-27
•
Expires: 2024-08-30
Abstract
Abstract A method of forming (and apparatus for forming) refractory metal nitride layers (including silicon nitride layers), such as a tantalum (silicon) nitride barrier layer, on a substrate by using a vapor deposition process with a refractory metal precursor compound, a disilazane, and an optional silicon precursor compound.
Inventors
- 👤 Brian A. Vaartstra
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:52
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45531; C23C16/22; C23C16/30; C23C16/34; C23C16/45553; H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/052; H10W20/0526; H10D1/682
Claims Analysis
Total Claims: 38
Claim 1
Independent Claim
96 words
A vapor deposition apparatus comprising: a vapor deposition chamber having a substrate positioned therein; one or more vessels comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; and one or more vessels comprising one or more disilazanes of the formula (R) x H 3−x SiNHSi(R) x H 3−x , wherein each R is independently an organic group, and x is 1 to 3.
Claim 2
Dependent Claim
96 words
A vapor deposition apparatus comprising: a vapor deposition chamber having a substrate positioned therein; one or more vessels comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; and one or more vessels comprising one or more disilazanes of the formula (R) x H 3−x SiNHSi(R) x H 3−x , wherein each R is independently an organic group, and x is 1 to 3.
Claim 3
Dependent Claim
38 words
The apparatus of claim 1 further comprising one or more vessels comprising one or more silicon precursor compounds and optionally one or more vessels comprising one or more reaction gases other than the disilazanes and silicon precursor compounds.
Claim 4
Dependent Claim
16 words
The apparatus of claim 1 wherein the vapor deposition chamber is a chemical vapor deposition chamber.
Claim 5
Dependent Claim
17 words
The apparatus of claim 1 wherein the vapor deposition chamber is an atomic layer vapor deposition chamber.
Claim 6
Dependent Claim
12 words
The apparatus of claim 1 wherein the substrate comprises a semiconductor substrate.
Claim 7
Dependent Claim
12 words
The apparatus of claim 1 wherein the substrate comprises a silicon-containing surface.
Claim 8
Dependent Claim
12 words
The apparatus of claim 1 wherein the substrate comprises a silicon wafer.
Claim 9
Dependent Claim
21 words
The apparatus of claim 1 wherein Y is independently selected from the group consisting of F, Cl, I, and combinations thereof.
Claim 10
Dependent Claim
12 words
The apparatus of claim 1 wherein each Y is a fluorine atom.
Claim 11
Dependent Claim
20 words
The apparatus of claim 1 wherein M is selected from the group consisting of Ti, Nb, Ta, Mo, and W.
Claim 12
Dependent Claim
13 words
The apparatus of claim 1 wherein M is tantalum and n is 5.
Claim 13
Dependent Claim
20 words
The apparatus of claim 1 wherein each R is independently selected from the group consisting of a (C1–C6) organic group.
Claim 14
Dependent Claim
13 words
The apparatus of claim 12 wherein each R is independently ethyl or methyl.
Claim 15
Dependent Claim
22 words
The apparatus of claim 13 wherein the disilazane is tetramethyldisilazane (TMDS), (CH 3 ) 2 HSiNHSiH(CH 3 ) 2 , or hexamethyldisilazane.
Claim 16
Dependent Claim
10 words
The apparatus of claim 14 wherein the disilazane is tetramethyldisilazane.
Claim 17
Dependent Claim
17 words
The apparatus of claim 1 with the proviso that the one or more disilazanes are not hexamethyldisilazane.
Claim 18
Dependent Claim
55 words
The apparatus of claim 2 wherein the one or more silicon precursor compounds comprises silane (SiH 4 ), disilane (Si 2 H 6 ), halogenated silanes, and organic silanes of the formula SiH p R 1 q wherein p=1–4, q=4-p, and each R 1 is independently an organic group having up to six carbon atoms.
Claim 19
Dependent Claim
20 words
The apparatus of claim 17 wherein each R 1 is independently an organic group having up to two carbon atoms.
Claim 20
Dependent Claim
14 words
The apparatus of claim 17 wherein each R 1 is independently an organic moiety.
Claim 21
Dependent Claim
47 words
The apparatus of claim 2 wherein the one or more silicon precursor compounds is selected from the group consisting of silane (SiH 4 ), disilane (Si 2 H 6 ), dichlorosilane (SiH 2 Cl 2 ), trichlorosilane (SiHCl 3 ), and trimethylsilane (SiH(CH 3 ) 3 ).
Claim 22
Dependent Claim
40 words
The apparatus of claim 20 wherein the one or more reaction gases other than the nitrogen and silicon precursor compounds comprises NH 3 , N 2 H 4 , B 2 H 6 , PH 3 , and combinations thereof.
Claim 23
Dependent Claim
23 words
The apparatus of claim 21 further comprising an inert carrier gas selected from the group consisting of nitrogen, helium, argon, and mixtures thereof.
Claim 24
Dependent Claim
91 words
A vapor deposition apparatus comprising: a vapor deposition chamber; one or more vessels comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; and one or more vessels comprising one or more disilazanes of the formula (R) x H 3−x SiNHSi(R) x H 3−x , wherein each R is independently an organic group, and x is 1 to 3.
Claim 25
Dependent Claim
91 words
A vapor deposition apparatus comprising: a vapor deposition chamber; one or more vessels comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; and one or more vessels comprising one or more disilazanes of the formula (R) x H 3−x SiNHSi(R) x H 3−x , wherein each R is independently an organic group, and x is 1 to 3.
Claim 26
Dependent Claim
38 words
The apparatus of claim 23 further comprising one or more vessels comprising one or more silicon precursor compounds and optionally one or more vessels comprising one or more reaction gases other than the disilazanes and silicon precursor compounds.
Claim 27
Dependent Claim
16 words
The apparatus of claim 23 wherein the vapor deposition chamber is a chemical vapor deposition chamber.
Claim 28
Dependent Claim
17 words
The apparatus of claim 23 wherein the vapor deposition chamber is an atomic layer vapor deposition chamber.
Claim 29
Dependent Claim
99 words
A vapor deposition apparatus comprising: a vapor deposition chamber; one or more vessels comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M, with the proviso that M is not titanium; and one or more vessels comprising one or more disilazanes of the formula (R) x H 3−x SiNHSi(R) x H 3−x , wherein each R is independently an organic group, and x is 1 to 3.
Claim 30
Dependent Claim
99 words
A vapor deposition apparatus comprising: a vapor deposition chamber; one or more vessels comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M, with the proviso that M is not titanium; and one or more vessels comprising one or more disilazanes of the formula (R) x H 3−x SiNHSi(R) x H 3−x , wherein each R is independently an organic group, and x is 1 to 3.
Claim 31
Dependent Claim
15 words
The apparatus of claim 27 with the proviso that Y is not a chlorine atom.
Claim 32
Dependent Claim
101 words
A vapor deposition apparatus comprising: a vapor deposition chamber; one or more vessels comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M, with the proviso that Y is not a chlorine atom; and one or more vessels comprising one or more disilazanes of the formula (R) x H 3−x SiNHSi(R) x H 3−x , wherein each R is independently an organic group, and x is 1 to 3.
Claim 33
Dependent Claim
101 words
A vapor deposition apparatus comprising: a vapor deposition chamber; one or more vessels comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M, with the proviso that Y is not a chlorine atom; and one or more vessels comprising one or more disilazanes of the formula (R) x H 3−x SiNHSi(R) x H 3−x , wherein each R is independently an organic group, and x is 1 to 3.
Claim 34
Dependent Claim
103 words
A vapor deposition apparatus comprising: a vapor deposition chamber; one or more vessels comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; and one or more vessels comprising one or more disilazanes of the formula (R) x H 3−x SiNHSi(R) x H 3−x , wherein each R is independently an organic group, and x is 1 to 3, with the proviso that the one or more disilazanes are not hexamethyldisilazane.
Claim 35
Dependent Claim
103 words
A vapor deposition apparatus comprising: a vapor deposition chamber; one or more vessels comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; and one or more vessels comprising one or more disilazanes of the formula (R) x H 3−x SiNHSi(R) x H 3−x , wherein each R is independently an organic group, and x is 1 to 3, with the proviso that the one or more disilazanes are not hexamethyldisilazane.
Claim 36
Dependent Claim
13 words
The apparatus of claim 30 with the proviso that M is not titanium.
Claim 37
Dependent Claim
15 words
The apparatus of claim 30 with the proviso that Y is not a chlorine atom.
Claim 38
Dependent Claim
13 words
The apparatus of claim 32 with the proviso that M is not titanium.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2010-03-26 | 2010-09-25 | 2011-03-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2014-03-26 | 2014-09-25 | 2015-03-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2018-03-26 | 2018-09-25 | 2019-03-27 | $7700.00 | Window Closed / Lapsed |