US6884466B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for low-temperature metal-organic chemical vapor deposition of tungsten nitride and tungsten nitride films
Assignee: Gelest Inc
•
Filing: 2003-04-28
•
Granted: 2005-04-26
•
Expires: 2023-04-28
Abstract
Abstract Processes for producing tungsten nitride and tungsten nitride films are provided in which a tungsten carbonyl compound and a nitrogen-containing reactant gas are reacted at a temperature below about 600° C. Tungsten nitride precursors are also included which comprise a tungsten carbonyl compound capable of forming a tungsten nitride film in the presence of a nitrogen-containing reactant gas at a temperature of less than about 600° C. A process for forming a film by atomic layer deposition is also provided which includes introducing a substrate having a surface into a deposition chamber and heating the substrate to a temperature sufficient to allow adsorption of a tungsten source precursor or an intermediate thereof, and thereafter sequentially introducing by pulsing: a tungsten source precursor which is absorbed as a monolayer, a purging inert gas, a nitrogen-containing gas for reacting with the monolayer to form a first tungsten nitride layer on the substrate surface, and an inert purging gas, and repeating the sequence to form a film of desired thickness.
Inventors
- 👤 Alain E. Kaloyeros
- 👤 Barry C. Arkles
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:54
CPC Classifications
B; B32; B32B; B32B9/00; C; C01; C01B; C01B21/00; C01B21/06; C01B21/0615; C01B21/062; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; C01P; C01P2002/00; C01P2002/70; C01P2002/72; C01P2002/77; C01P2004/00; C01P2004/01; C01P2004/03; C01P2004/04; C01P2006/00; C01P2006/10; C01P2006/40
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
62 words
A process for the production of tungsten nitride comprising reacting a tungsten carbonyl compound with a nitrogen-containing gas in a deposition chamber at a temperature below about 600° C., wherein the tungsten carbonyl compound is introduced into the chamber in a vapor state separately from the introduction of the nitrogen-containing gas prior to reacting the tungsten carbonyl compound and the nitrogen-containing gas.
Claim 2
Dependent Claim
62 words
A process for the production of tungsten nitride comprising reacting a tungsten carbonyl compound with a nitrogen-containing gas in a deposition chamber at a temperature below about 600° C., wherein the tungsten carbonyl compound is introduced into the chamber in a vapor state separately from the introduction of the nitrogen-containing gas prior to reacting the tungsten carbonyl compound and the nitrogen-containing gas.
Claim 3
Dependent Claim
19 words
A process for the production of tungsten nitride according to claim 1 , wherein the nitrogen-containing gas is ammonia.
Claim 4
Dependent Claim
25 words
The process for the production of tungsten nitride according to claim 1 , wherein the tungsten nitride has a formula WN x , wherein 0.1≦x≦2.0.
Claim 5
Dependent Claim
37 words
The process for the production of tungsten nitride according to claim 1 , wherein the nitrogen-containing gas is ammonia and the process further comprises reacting the tungsten carbonyl compound with the ammonia in the presence of hydrogen.
Claim 6
Dependent Claim
25 words
The process for the production of tungsten nitride according to claim 1 , wherein the temperature is from about 200° C. to about 350° C.
Claim 7
Dependent Claim
25 words
The process for the production of tungsten nitride according to claim 5 , wherein the temperature is from about 200° C. to about 275° C.
Claim 8
Dependent Claim
56 words
The process for the production of tungsten nitride according to claim 1 , wherein the tungsten carbonyl compound is a compound according to formula (I): W(CO) (6−n) X n (I) wherein X is a two-electron donor or a ligand selected from the group consisting of ammonia, amine, carbonyl and halogen, and n is 0 or 1.
Claim 9
Dependent Claim
73 words
A process for the production of a tungsten nitride film comprising reacting a tungsten carbonyl compound with a nitrogen-containing gas in a deposition chamber having a substrate, wherein the substrate temperature is from about 200° C. to about 600° C., wherein the tungsten carbonyl compound is introduced into the chamber in a vapor state separately from the introduction of the nitrogen-containing gas prior to reacting the tungsten carbonyl compound and the nitrogen-containing gas.
Claim 10
Dependent Claim
73 words
A process for the production of a tungsten nitride film comprising reacting a tungsten carbonyl compound with a nitrogen-containing gas in a deposition chamber having a substrate, wherein the substrate temperature is from about 200° C. to about 600° C., wherein the tungsten carbonyl compound is introduced into the chamber in a vapor state separately from the introduction of the nitrogen-containing gas prior to reacting the tungsten carbonyl compound and the nitrogen-containing gas.
Claim 11
Dependent Claim
34 words
The process for the production of tungsten nitride film according to claim 8 , wherein the substrate temperature is from about 200° C. to about 275° C. and the tungsten nitride film is amorphous.
Claim 12
Dependent Claim
28 words
The process for the production of a tungsten nitride film according to claim 8 , wherein the tungsten nitride film has a formula WN x , wherein 0.1≦x≦2.0.
Claim 13
Dependent Claim
56 words
The process for the production of a tungsten nitride film according to claim 8 , wherein the tungsten carbonyl compound has the following formula (I): W(CO) (6−n) X n (I) wherein X is a two-electron donor or a ligand selected from the group consisting of ammonia, amine, carbonyl and halogen, and n is 0 or 1.
Claim 14
Dependent Claim
98 words
A process for the chemical vapor deposition of a tungsten nitride film onto a substrate, comprising: (a) introducing into a deposition chamber: (i) a substrate (ii) a tungsten carbonyl compound in a vapor state; and (iii) at least one nitrogen-containing gas; and (b) maintaining a substrate temperature of from about 200° C. to about 600° C. for a period of time sufficient to deposit a tungsten nitride film on the substrate, wherein the tungsten carbonyl compound is introduced into the deposition chamber separately from the nitrogen-containing gas prior to reacting the tungsten carbonyl compound and the nitrogen-containing gas.
Claim 15
Dependent Claim
98 words
A process for the chemical vapor deposition of a tungsten nitride film onto a substrate, comprising: (a) introducing into a deposition chamber: (i) a substrate (ii) a tungsten carbonyl compound in a vapor state; and (iii) at least one nitrogen-containing gas; and (b) maintaining a substrate temperature of from about 200° C. to about 600° C. for a period of time sufficient to deposit a tungsten nitride film on the substrate, wherein the tungsten carbonyl compound is introduced into the deposition chamber separately from the nitrogen-containing gas prior to reacting the tungsten carbonyl compound and the nitrogen-containing gas.
Claim 16
Dependent Claim
61 words
The process for the chemical vapor deposition of a tungsten nitride film onto a substrate according to claim 12 , wherein the tungsten carbonyl compound has the following formula (I): W(CO) (6−n) X n (I) wherein X is a two-electron donor or a ligand selected from the group consisting of ammonia, amine, carbonyl and halogen, and n is 0 or 1.
Claim 17
Dependent Claim
26 words
The process for the chemical vapor deposition of a tungsten nitride film onto a substrate according to claim 13 , wherein the nitrogen-containing gas is ammonia.
Claim 18
Dependent Claim
28 words
The process for the chemical vapor deposition of a tungsten nitride film onto a substrate according to claim 14 , further comprising introducing hydrogen to the deposition chamber.
Claim 19
Dependent Claim
33 words
The process for the chemical vapor deposition of a tungsten nitride film onto a substrate according to claim 13 , wherein the substrate temperature is from about 200° C. to about 350° C.
Claim 20
Dependent Claim
33 words
The process for the chemical vapor deposition of a tungsten nitride film onto a substrate according to claim 16 , wherein the substrate temperature is from about 200° C. to about 250° C.
References Cited (Backward Citations)
US1278580A
Cited
US2964387A
Cited
US2952524A
Cited
US3100687A
Cited
US3652324A
Cited
US3595616A
Cited
SU450642A1
Cited
US4058430A
Cited
US4389973A
Cited
US4535000A
Cited
US4608271A
Cited
JPS6295823A
Cited
US4995949A
Cited
US4884123A
Cited
US4859617A
Cited
US5077091A
Cited
US5149514A
Cited
US5017403A
Cited
US5232872A
Cited
US4980198A
Cited
JPH03214734A
Cited
US5175017A
Cited
US5180512A
Cited
US5820664A
Cited
US5273775A
Cited
US5144048A
Cited
US5187300A
Cited
US5085731A
Cited
US5380678A
Cited
US5173327A
Cited
US5487923A
Cited
US5326404A
Cited
US5393565A
Cited
US5271963A
Cited
USRE35614E
Cited
US5429989A
Cited
US6090709A
Cited
US5711811A
Cited
US5691235A
Cited
US6063179A
Cited
US6409851B1
Cited
US5919531A
Cited
US5972430A
Cited
US6270572B1
Cited
DE19853598A1
Cited
US6037001A
Cited
US6340827B1
Cited
US6099903A
Cited
US6376349B1
Cited
US6797340B2
Cited
US6833161B2
Cited
US6821563B2
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2008-04-25 | 2008-10-25 | 2009-04-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2012-04-25 | 2012-10-25 | 2013-04-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2016-04-25 | 2016-10-25 | 2017-04-26 | $7700.00 | Window Closed / Lapsed |