US5326404A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plasma processing apparatus
Assignee: Sony Corp
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Filing: 1992-12-18
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Granted: 1994-07-05
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Expires: 2012-12-18
Abstract
Abstract A plasma processing apparatus for processing a semiconductor wafer by using a plasma to fabricate a semiconductor device comprises: a film forming vessel having at least one film forming chamber for forming a Ti/TiN laminate layer or a Ti/TiON/TiN laminate layer on a semiconductor wafer therein; and a heating system for heating the side wall of the film forming vessel so that the inner surface of the side wall is heated at a predetermined temperature to prevent the deposition of a coarse TiN film or TiN particles, which are liable to deteriorate the quality of the laminate layer formed on the semiconductor wafer, over the inner surface of the side wall of the film forming vessel.
Inventors
- 👤 Junichi Sato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 15:28
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/511; C23C16/4401
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
122 words
A plasma processing apparatus for processing semiconductor wafers, comprising: a electron cyclotron resonance plasma generating apparatus including a plasma chamber in which plasma is generated during processing; a wafer processing chamber in fluid communication with said plasma chamber to receive the plasma during the processing; a wafer supporting platform in said wafer processing chamber on which said semiconductor wafers are mounted for the processing; a first heater mounted in thermal communication with said wafer supporting platform and controllable to heat the semiconductor wafers during the processing; a second heater mounted in thermal communication with said wafer processing chamber to heat walls of said wafer processing chamber during the processing; and means for charging said wafer processing chamber with gases for the processing.
Claim 2
Dependent Claim
122 words
A plasma processing apparatus for processing semiconductor wafers, comprising: a electron cyclotron resonance plasma generating apparatus including a plasma chamber in which plasma is generated during processing; a wafer processing chamber in fluid communication with said plasma chamber to receive the plasma during the processing; a wafer supporting platform in said wafer processing chamber on which said semiconductor wafers are mounted for the processing; a first heater mounted in thermal communication with said wafer supporting platform and controllable to heat the semiconductor wafers during the processing; a second heater mounted in thermal communication with said wafer processing chamber to heat walls of said wafer processing chamber during the processing; and means for charging said wafer processing chamber with gases for the processing.
Claim 3
Dependent Claim
23 words
A plasma processing apparatus as claimed in claim 1, wherein said second heater is buried in said walls of said wafer processing chamber.
Claim 4
Dependent Claim
34 words
A plasma processing apparatus as claimed in claim 1, wherein said first heater and said second heater heat said wafer supporting platform to a same temperature as said plasma processing chamber during the process.
References Cited (Backward Citations)
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JPS5916329A
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JPH0426769A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-07-04 | 1998-01-03 | 1998-07-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-07-04 | 2002-01-03 | 2002-07-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-07-04 | 2006-01-03 | 2006-07-05 | $7700.00 | Window Closed / Lapsed |