Plasma cvd treating device

Abstract

Abstract PURPOSE:To form a uniform coated film by arranging plural sets of opposed cathode plate and anode plate at regular intervals in a vacuum vessel provided with a heating means to uniformize the temp. of a material to be worked and the flow of a gas. CONSTITUTION:A cathode body 2, an anode body 3, and a heater 4 to be heated by an electric power source 6 are provided in plural stages at regular intervals in the vacuum vessel 1 provided with a gas supply port 1b and an exhaust port 1a to form the plasma CVD treating device. The material 5 to be worked is placed on the cathode body 2, heated by the heater 4 to about 550 deg.C, and coated with TiN, etc. The temp. of the material 5 to be worked is kept constant by this mechanism, and a uniform coated film can be formed. Besides, when a heating means is provided at the uppermost stage and the lowermost stage of the vessel 1 and further a temp. controller is furnished to each heating means, the temp. of the whole device can be uniformized. Since the electrode bodies 2 and 3 serve as the heating means, the throughput can be increased.

Inventors

• 👤 Takashi Fujita
• 👤 隆 藤田
• 👤 Yasuhisa Shiraishi
• 👤 泰久 白石

Bibliographic Details