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US6884466B2
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Process for low-temperature metal-organic chemical vapor deposition of tungsten nitride and tungsten nitride films
Assignee: Gelest Inc
•
Filing: 2003-04-28
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Granted: 2005-04-26
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Expires: 2023-04-28
Abstract
Abstract Processes for producing tungsten nitride and tungsten nitride films are provided in which a tungsten carbonyl compound and a nitrogen-containing reactant gas are reacted at a temperature below about 600° C. Tungsten nitride precursors are also included which comprise a tungsten carbonyl compound capable of forming a tungsten nitride film in the presence of a nitrogen-containing reactant gas at a temperature of less than about 600° C. A process for forming a film by atomic layer deposition is also provided which includes introducing a substrate having a surface into a deposition chamber and heating the substrate to a temperature sufficient to allow adsorption of a tungsten source precursor or an intermediate thereof, and thereafter sequentially introducing by pulsing: a tungsten source precursor which is absorbed as a monolayer, a purging inert gas, a nitrogen-containing gas for reacting with the monolayer to form a first tungsten nitride layer on the substrate surface, and an inert purging gas, and repeating the sequence to form a film of desired thickness.
Inventors
- 👤 Alain E. Kaloyeros
- 👤 Barry C. Arkles
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:08
CPC Classifications
B; B32; B32B; B32B9/00; C; C01; C01B; C01B21/00; C01B21/06; C01B21/0615; C01B21/062; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; C01P; C01P2002/00; C01P2002/70; C01P2002/72; C01P2002/77; C01P2004/00; C01P2004/01; C01P2004/03; C01P2004/04; C01P2006/00; C01P2006/10; C01P2006/40
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
62 words
A process for the production of tungsten nitride comprising reacting a tungsten carbonyl compound with a nitrogen-containing gas in a deposition chamber at a temperature below about 600° C., wherein the tungsten carbonyl compound is introduced into the chamber in a vapor state separately from the introduction of the nitrogen-containing gas prior to reacting the tungsten carbonyl compound and the nitrogen-containing gas.
Claim 2
Dependent Claim
62 words
A process for the production of tungsten nitride comprising reacting a tungsten carbonyl compound with a nitrogen-containing gas in a deposition chamber at a temperature below about 600° C., wherein the tungsten carbonyl compound is introduced into the chamber in a vapor state separately from the introduction of the nitrogen-containing gas prior to reacting the tungsten carbonyl compound and the nitrogen-containing gas.
Claim 3
Dependent Claim
19 words
A process for the production of tungsten nitride according to claim 1 , wherein the nitrogen-containing gas is ammonia.
Claim 4
Dependent Claim
25 words
The process for the production of tungsten nitride according to claim 1 , wherein the tungsten nitride has a formula WN x , wherein 0.1≦x≦2.0.
Claim 5
Dependent Claim
37 words
The process for the production of tungsten nitride according to claim 1 , wherein the nitrogen-containing gas is ammonia and the process further comprises reacting the tungsten carbonyl compound with the ammonia in the presence of hydrogen.
Claim 6
Dependent Claim
25 words
The process for the production of tungsten nitride according to claim 1 , wherein the temperature is from about 200° C. to about 350° C.
Claim 7
Dependent Claim
25 words
The process for the production of tungsten nitride according to claim 5 , wherein the temperature is from about 200° C. to about 275° C.
Claim 8
Dependent Claim
56 words
The process for the production of tungsten nitride according to claim 1 , wherein the tungsten carbonyl compound is a compound according to formula (I): W(CO) (6−n) X n (I) wherein X is a two-electron donor or a ligand selected from the group consisting of ammonia, amine, carbonyl and halogen, and n is 0 or 1.
Claim 9
Dependent Claim
73 words
A process for the production of a tungsten nitride film comprising reacting a tungsten carbonyl compound with a nitrogen-containing gas in a deposition chamber having a substrate, wherein the substrate temperature is from about 200° C. to about 600° C., wherein the tungsten carbonyl compound is introduced into the chamber in a vapor state separately from the introduction of the nitrogen-containing gas prior to reacting the tungsten carbonyl compound and the nitrogen-containing gas.
Claim 10
Dependent Claim
73 words
A process for the production of a tungsten nitride film comprising reacting a tungsten carbonyl compound with a nitrogen-containing gas in a deposition chamber having a substrate, wherein the substrate temperature is from about 200° C. to about 600° C., wherein the tungsten carbonyl compound is introduced into the chamber in a vapor state separately from the introduction of the nitrogen-containing gas prior to reacting the tungsten carbonyl compound and the nitrogen-containing gas.
Claim 11
Dependent Claim
34 words
The process for the production of tungsten nitride film according to claim 8 , wherein the substrate temperature is from about 200° C. to about 275° C. and the tungsten nitride film is amorphous.
Claim 12
Dependent Claim
28 words
The process for the production of a tungsten nitride film according to claim 8 , wherein the tungsten nitride film has a formula WN x , wherein 0.1≦x≦2.0.
Claim 13
Dependent Claim
56 words
The process for the production of a tungsten nitride film according to claim 8 , wherein the tungsten carbonyl compound has the following formula (I): W(CO) (6−n) X n (I) wherein X is a two-electron donor or a ligand selected from the group consisting of ammonia, amine, carbonyl and halogen, and n is 0 or 1.
Claim 14
Dependent Claim
98 words
A process for the chemical vapor deposition of a tungsten nitride film onto a substrate, comprising: (a) introducing into a deposition chamber: (i) a substrate (ii) a tungsten carbonyl compound in a vapor state; and (iii) at least one nitrogen-containing gas; and (b) maintaining a substrate temperature of from about 200° C. to about 600° C. for a period of time sufficient to deposit a tungsten nitride film on the substrate, wherein the tungsten carbonyl compound is introduced into the deposition chamber separately from the nitrogen-containing gas prior to reacting the tungsten carbonyl compound and the nitrogen-containing gas.
Claim 15
Dependent Claim
98 words
A process for the chemical vapor deposition of a tungsten nitride film onto a substrate, comprising: (a) introducing into a deposition chamber: (i) a substrate (ii) a tungsten carbonyl compound in a vapor state; and (iii) at least one nitrogen-containing gas; and (b) maintaining a substrate temperature of from about 200° C. to about 600° C. for a period of time sufficient to deposit a tungsten nitride film on the substrate, wherein the tungsten carbonyl compound is introduced into the deposition chamber separately from the nitrogen-containing gas prior to reacting the tungsten carbonyl compound and the nitrogen-containing gas.
Claim 16
Dependent Claim
61 words
The process for the chemical vapor deposition of a tungsten nitride film onto a substrate according to claim 12 , wherein the tungsten carbonyl compound has the following formula (I): W(CO) (6−n) X n (I) wherein X is a two-electron donor or a ligand selected from the group consisting of ammonia, amine, carbonyl and halogen, and n is 0 or 1.
Claim 17
Dependent Claim
26 words
The process for the chemical vapor deposition of a tungsten nitride film onto a substrate according to claim 13 , wherein the nitrogen-containing gas is ammonia.
Claim 18
Dependent Claim
28 words
The process for the chemical vapor deposition of a tungsten nitride film onto a substrate according to claim 14 , further comprising introducing hydrogen to the deposition chamber.
Claim 19
Dependent Claim
33 words
The process for the chemical vapor deposition of a tungsten nitride film onto a substrate according to claim 13 , wherein the substrate temperature is from about 200° C. to about 350° C.
Claim 20
Dependent Claim
33 words
The process for the chemical vapor deposition of a tungsten nitride film onto a substrate according to claim 16 , wherein the substrate temperature is from about 200° C. to about 250° C.
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