US5085731A
Expired / Lapsed
US
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Volatile liquid precursors for the chemical vapor deposition of copper
Assignee: Versum Materials US LLC
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Filing: 1991-02-04
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Granted: 1992-02-04
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Expires: 2011-02-04
Abstract
Abstract Volatile liquid organometallic copper complexes are provided which are capable of selectively depositing a copper film onto metallic or other electrically conducting portions of a substrate surface under CVD conditions. These organometallic copper complexes are represented by the structural formula: ##STR1## wherein R 1 and R 3 are each independently C 1 -C 8 perfluoroalkyl, R 2 is H, F or C 1 -C 8 perfluoroalkyl, R 4 is H, C 1 -C 8 alkyl, or Si(R 6 ) 3 , each R 5 is independently H or C 1 --C 8 alkyl and each R 6 is independently phenyl or C 1 -C 8 alkyl. A process for depositing copper films using these organometallic copper complexes is also provided.
Inventors
- 👤 John A. T. Norman
- 👤 Beth A. Muratore
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 17:40
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/06; C23C16/18; C07; C07F; C07F7/00; C07F7/02; C07F7/08; C07F7/0803
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
132 words
A process for selectively depositing a copper metal film by chemical vapor deposition onto a metallic or other electrically conducting portion of a substrate surface, said process comprising contacting a substrate having a surface of which a portion comprises a metallic or electrically conducting material with a volatile organometallic copper complex under chemical vapor deposition conditions, said organometallic copper complex being represented by the structural formula: ##STR6## wherein R 1 and R 3 are each independently C 1 -C 8 perfluoroalkyl, R 2 is H, F or C 1 -C 8 perfluoroalkyl, R 4 is H, C 1 -C 8 alkyl, or Si(R 6 ) 3 , each R 5 is independently H or C 1 -C 8 alkyl and each R 6 is independently phenyl or C 1 -C 8 alkyl.
Claim 2
Dependent Claim
132 words
A process for selectively depositing a copper metal film by chemical vapor deposition onto a metallic or other electrically conducting portion of a substrate surface, said process comprising contacting a substrate having a surface of which a portion comprises a metallic or electrically conducting material with a volatile organometallic copper complex under chemical vapor deposition conditions, said organometallic copper complex being represented by the structural formula: ##STR6## wherein R 1 and R 3 are each independently C 1 -C 8 perfluoroalkyl, R 2 is H, F or C 1 -C 8 perfluoroalkyl, R 4 is H, C 1 -C 8 alkyl, or Si(R 6 ) 3 , each R 5 is independently H or C 1 -C 8 alkyl and each R 6 is independently phenyl or C 1 -C 8 alkyl.
Claim 3
Dependent Claim
11 words
The process of claim 1 wherein each R 5 is H.
Claim 4
Dependent Claim
10 words
The process of claim 2 wherein R 4 is H.
Claim 5
Dependent Claim
12 words
The process of claim 3 wherein R 6 is a methyl group.
Claim 6
Dependent Claim
10 words
The process of claim 1 wherein R 2 is H.
Claim 7
Dependent Claim
16 words
The process of claim 5 wherein both R 1 and R 3 are CF 3 .
Claim 8
Dependent Claim
28 words
The process of claim 1 wherein the surface onto which the copper metal film is deposited is selected from the group consisting of: W, TiN, Ta, and Al.
Claim 9
Dependent Claim
16 words
The process of claim 1 wherein the deposition temperature is from 120° C. to 200° C.
Claim 10
Dependent Claim
18 words
The process of claim 1 wherein said substrate is contacted with hydrogen gas along with the organometallic precursor.
Claim 11
Dependent Claim
117 words
A process for selectively etching a copper film from the surface of a substrate, said process comprising: contacting the substrate having a copper film surface with an organometallic copper complex and a silylolefin ligand, both in the gas phase, wherein said complex and said silylolefin ligand are represented by the structural formulae: ##STR7## wherein R 1 and R 3 are each independently C 1 -C 8 perfluoroalkyl, R2 is H, F or C 1 -C 8 perfluoroalkyl, R 4 is H, C 1 -C 8 alkyl, or Si(R 6 ) 3 , each R 5 is independently H or C 1 -C 8 alkyl and each R 6 is independently phenyl or C 1 -C 8 alkyl.
Claim 12
Dependent Claim
117 words
A process for selectively etching a copper film from the surface of a substrate, said process comprising: contacting the substrate having a copper film surface with an organometallic copper complex and a silylolefin ligand, both in the gas phase, wherein said complex and said silylolefin ligand are represented by the structural formulae: ##STR7## wherein R 1 and R 3 are each independently C 1 -C 8 perfluoroalkyl, R2 is H, F or C 1 -C 8 perfluoroalkyl, R 4 is H, C 1 -C 8 alkyl, or Si(R 6 ) 3 , each R 5 is independently H or C 1 -C 8 alkyl and each R 6 is independently phenyl or C 1 -C 8 alkyl.
Claim 13
Dependent Claim
22 words
The process of claim 10 wherein the organometallic copper complex is Cu +2 (hexafluoroacetylacetonate 31 1) 2 and the silylolefin is trimethylvinylsilane.
References Cited (Backward Citations)
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