Forming method of titanium nitride film

Abstract

Abstract PURPOSE:To prevent clogging of a pipe and generation of a particle by using the chemical vapor deposition(CVD) method employing a raw material gas including at least TiBr4 gas and N gas. CONSTITUTION:After forming an SiO2 insulation film 12 on a silicon substrate 10 where an impurity diffusion region 1 is formed, a contact hole 13 whose opening width is 0.5-0.6mum is provided for exposing the impurity diffusion region 11 and then a TiN film 14 is formed on the inner wall and the exposed surface. When forming the TiN film 14, a low pressure CVD furnace is used and then TiBi4 and ammonium (NH3) are used as source gases while H2 or N2 is used as a purge gas. Further, a tungsten film 15 is allowed to grow on the entire surface of the TiN film 14, the surface of the SiO2 insulation film 12 is exposed onto the surface by etching back a tungsten film 15, and then an upper-layer wire aluminum film 16 is formed on the tungsten film 15 and the SiO2 insulation film 12, thus preventing generation of particles and blocking of pipes etc.

Inventors

• 👤 Toshiaki Hasegawa
• 👤 利昭 長谷川
• 👤 Junichi Sato
• 👤 淳一 佐藤

Bibliographic Details