US6376349B1
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Process for forming a semiconductor device and a conductive structure
Assignee: NXP USA Inc
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Filing: 2000-01-19
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Granted: 2002-04-23
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Expires: 2020-01-19
Abstract
Abstract Semiconductor devices and conductive structures can be formed having a metallic layer. In one embodiment, a semiconductor device includes an amorphous metallic layer ( 22 ) and a crystalline metallic layer ( 42 ). The amorphous metallic layer ( 22 ) helps to reduce the likelihood of penetration of contaminants through the amorphous metallic layer ( 22 ). A more conductive crystalline metallic layer ( 42 ) can be formed on the amorphous metallic layer ( 22 ) to help keep resistivity relatively low. When forming a conductive structure, a metal-containing gas and a scavenger gas flow simultaneously during at least one point in time. The conductive structure may be part of a gate electrode.
Inventors
- 👤 Philip J. Tobin
- 👤 Olubunmi Adetutu
- 👤 Bikas Maiti
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 05:13
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/665; H10D64/666; H10D64/01; H10D64/011; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01316
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
81 words
A process for forming a semiconductor device comprising: forming an insulating layer over a semiconductor substrate; forming an amorphous metal-containing layer over the insulating layer, wherein the amorphous metal-containing layer is further characterized as a tungsten-containing layer that is formed using: a tungsten-containing gas that includes tungsten hexafluoride; and a semiconductor-containing gas that includes silane, wherein a gas flow ratio of silane to tungsten hexafluoride is less than approximately 3:1; and forming a crystalline metal-containing layer over the amorphous metal-containing layer.
Claim 2
Dependent Claim
81 words
A process for forming a semiconductor device comprising: forming an insulating layer over a semiconductor substrate; forming an amorphous metal-containing layer over the insulating layer, wherein the amorphous metal-containing layer is further characterized as a tungsten-containing layer that is formed using: a tungsten-containing gas that includes tungsten hexafluoride; and a semiconductor-containing gas that includes silane, wherein a gas flow ratio of silane to tungsten hexafluoride is less than approximately 3:1; and forming a crystalline metal-containing layer over the amorphous metal-containing layer.
Claim 3
Dependent Claim
15 words
The process of claim 1 , wherein the insulating layer includes a gate dielectric layer.
Claim 4
Dependent Claim
32 words
The process of claim 2 , wherein the gate dielectric layer includes a compound containing an element selected from a group consisting of silicon, nitrogen, tantalum, titanium, strontium, hafnium, zirconium, and aluminum.
Claim 5
Dependent Claim
21 words
The process of claim 1 , wherein a thickness of the tungsten-containing layer is in a range of approximately 2-20 nanometers.
Claim 6
Dependent Claim
15 words
The process of claim 1 , wherein the crystalline metal-containing layer includes a tungsten-containing layer.
Claim 7
Dependent Claim
22 words
The process of claim 1 , wherein a thickness of the crystalline tungsten-containing layer is in a range of approximately 20-50 nanometers.
Claim 8
Dependent Claim
26 words
The process of claim 1 , further comprising forming a refractory metal nitride layer after forming the insulating layer and before forming the amorphous tungsten-containing layer.
Claim 9
Dependent Claim
37 words
The process of claim 1 , further comprising: forming a gate electrode from the amorphous metal-containing layer and the crystalline metal-containing layer; forming an interconnect over the gate electrode; and forming a passivation layer over the interconnect.
Claim 10
Dependent Claim
73 words
A process for forming a conductive structure comprising: flowing a metal-containing gas; and flowing a scavenging gas, wherein: the scavenging gas includes a gas precursor selected from a group consisting of a semiconductive element, nitrogen, and oxygen; the metal-containing gas and the scavenging gas flow simultaneous during at least one point in time; and a metallic layer is formed and includes less than approximately ten percent of any element within the scavenging gas.
Claim 11
Dependent Claim
73 words
A process for forming a conductive structure comprising: flowing a metal-containing gas; and flowing a scavenging gas, wherein: the scavenging gas includes a gas precursor selected from a group consisting of a semiconductive element, nitrogen, and oxygen; the metal-containing gas and the scavenging gas flow simultaneous during at least one point in time; and a metallic layer is formed and includes less than approximately ten percent of any element within the scavenging gas.
Claim 12
Dependent Claim
15 words
The process of claim 9 , wherein the metal-containing gas includes a refractory metal element.
Claim 13
Dependent Claim
21 words
The process of claim 9 , wherein the metal-containing gas includes halogen atoms and the scavenging gas includes a semiconductive element.
Claim 14
Dependent Claim
20 words
The process of claim 9 , wherein the metal-containing gas includes carbon atoms and the scavenging gas includes oxygen atoms.
Claim 15
Dependent Claim
14 words
The process of claim 9 , wherein the metallic layer is amorphous as formed.
Claim 16
Dependent Claim
14 words
The process of claim 9 , wherein the conductive structure includes a gate electrode.
Claim 17
Dependent Claim
82 words
A process for forming a semiconductor device comprising: forming an insulating layer over a semiconductor substrate; forming an amorphous metal-containing layer over the insulating layer, wherein the amorphous metal-containing layer is further characterized as a tungsten-containing layer that is formed using: a tungsten-containing gas that includes tungsten hexafluoride; and a semiconductor-containing gas, wherein the semiconductor containing gas consists of a gas selected from a group consisting of chlorosilane, dichlorosilane, and germane; and forming a crystalline metal-containing layer over the amorphous metal-containing layer.
Claim 18
Dependent Claim
82 words
A process for forming a semiconductor device comprising: forming an insulating layer over a semiconductor substrate; forming an amorphous metal-containing layer over the insulating layer, wherein the amorphous metal-containing layer is further characterized as a tungsten-containing layer that is formed using: a tungsten-containing gas that includes tungsten hexafluoride; and a semiconductor-containing gas, wherein the semiconductor containing gas consists of a gas selected from a group consisting of chlorosilane, dichlorosilane, and germane; and forming a crystalline metal-containing layer over the amorphous metal-containing layer.
References Cited (Backward Citations)
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