US6103609A
Expired / Lapsed
US
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Method for fabricating semiconductor device
Assignee: SK Hynix Inc
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Filing: 1998-10-29
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Granted: 2000-08-15
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Expires: 2018-10-29
Abstract
Abstract Method for fabricating a semiconductor device, is disclosed, in which a grain size is made coarse for forming a thin film with a low resistance, including the steps of (1) depositing an insulating film on a substrate, (2) depositing a silicon layer on the insulating film, (3) depositing an amorphous metal nitride film on the silicon layer, and (4) heat treating the amorphous metal nitride film to alter into a crystalline pure metal film.
Inventors
- 👤 Kee Sun Lee
- 👤 Byung Hak Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 07:28
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312; H10D64/60; H10D64/66; H10D64/661; H10D64/662
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
56 words
A method for fabricating a semiconductor device comprising the steps of: (1) depositing an insulating film on a substrate; (2) depositing a silicon layer on the insulating film; (3) depositing an amorphous metal nitride film on the silicon layer; and, (4) heat treating the amorphous metal nitride film to alter into a crystalline pure metal film.
Claim 2
Independent Claim
56 words
A method for fabricating a semiconductor device comprising the steps of: (1) depositing an insulating film on a substrate; (2) depositing a silicon layer on the insulating film; (3) depositing an amorphous metal nitride film on the silicon layer; and, (4) heat treating the amorphous metal nitride film to alter into a crystalline pure metal film.
Claim 3
Dependent Claim
43 words
A method as claimed in claim 1, wherein the step (4) includes the step of heat treating the amorphous metal nitride film to alter into a state in which a crystalline pure metal film state and a metal nitride film state are coexistent.
Claim 4
Dependent Claim
19 words
A method as claimed in claim 1, wherein the amorphous metal nitride film is of either tungsten or molybdenum.
Claim 5
Dependent Claim
19 words
A method as claimed in claim 1, wherein the amorphous metal nitride film has a nitrogen concentration of 10%˜70%.
Claim 6
Dependent Claim
21 words
A method as claimed in claim 1, wherein the silicon layer is chemical vapor deposited to a thickness of 800˜1200 Å.
Claim 7
Dependent Claim
21 words
A method as claimed in claim 1, wherein the amorphous metal nitride film is formed to a thickness of 600˜1500 Å.
Claim 8
Dependent Claim
16 words
A method as claimed in claim 1, wherein the heat treatment is conducted at 900˜1410° C.
Claim 9
Dependent Claim
108 words
A method as claimed in claim 1, wherein the step (4) includes the steps of; a first heat treatment conducted at a temperature ranging 400˜600° C. for diffusing nitrogen in the metal nitride film to outside of the metal nitride film while the metal nitride film is kept amorphous, and a second heat treatment conducted at a temperature ranging 900˜1410° C. for diffusing nitrogen in the metal nitride film to outside of the metal nitride film while the metal nitride film is altered into a coexistence of a crystalline pure metal film in a surface portion thereof and a quasistable metal nitride film in a bottom portion thereof.
Claim 10
Dependent Claim
49 words
A method as claimed in claim 1, wherein the step (4) is conducted in a gas ambient containing hydrogen H 2 , nitrogen N 2 , and argon Ar, or any one of the gases under a vacuum to an extent the amorphous metal nitride film is not oxidized.
Claim 11
Dependent Claim
32 words
A method as claimed in claim 1, further comprising the step of selectively removing the silicon layer and the crystalline pure metal film, to form a gate electrode of the semiconductor device.
Claim 12
Dependent Claim
31 words
A method as claimed in claim 1, wherein the step (4) includes the step of forming a barrier layer at a boundary of the pure metal film and the silicon layer.
Claim 13
Independent Claim
85 words
A method for fabricating a semiconductor device comprising the steps of: (1) forming an insulating film on a semiconductor substrate; (2) forming a silicon layer on the insulating film; (3) depositing a first amorphous metal nitride film and a second amorphous metal nitride film in succession on the silicon layer; (4) injecting impurity ions to break a lattice of the second metal nitride film; and, (5) heat treating the second metal nitride film having a lattice broken to alter into a crystalline pure metal film.
Claim 14
Independent Claim
85 words
A method for fabricating a semiconductor device comprising the steps of: (1) forming an insulating film on a semiconductor substrate; (2) forming a silicon layer on the insulating film; (3) depositing a first amorphous metal nitride film and a second amorphous metal nitride film in succession on the silicon layer; (4) injecting impurity ions to break a lattice of the second metal nitride film; and, (5) heat treating the second metal nitride film having a lattice broken to alter into a crystalline pure metal film.
Claim 15
Dependent Claim
19 words
A method as claimed in claim 12, wherein the second metal nitride film has a nitrogen content of 20˜50%.
Claim 16
Dependent Claim
20 words
A method as claimed in claim 12, wherein the second metal nitride film has a nitrogen atom concentration below 20%.
Claim 17
Dependent Claim
20 words
A method as claimed in claim 12, wherein the heat treatment in the step (5) in conducted at 600˜1410° C.
Claim 18
Dependent Claim
34 words
A method as claimed in claim 12, wherein at least ions of one selected from phosphorus, boron, and arsenic are injected into the second metal nitride film as the impurities in the step (4).
Claim 19
Dependent Claim
20 words
A method as claimed in claim 12, wherein the first, and second metal nitride films are of tungsten or molybdenum.
Claim 20
Dependent Claim
38 words
A method as claimed in claim 12, wherein the second metal nitride film having a lattice broken as well as a portion of the first metal nitride film are altered into pure metal film in the step (5).
Claim 21
Dependent Claim
37 words
A method as claimed in claim 12, further comprising the step of selectively removing the silicon layer, the amorphous pure metal film, and the first metal nitride film, to form a gate electrode of the semiconductor device.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-08-15 | 2004-02-14 | 2004-08-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-08-15 | 2008-02-14 | 2008-08-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-08-15 | 2012-02-14 | 2012-08-15 | $7700.00 | Window Closed / Lapsed |