US6043148A
Expired / Lapsed
US
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Method of fabricating contact plug
Assignee: United Microelectronics Corp
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Filing: 1998-04-16
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Granted: 2000-03-28
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Expires: 2018-04-16
Abstract
Abstract A method of fabricating a metal plug. On a semiconductor substrate comprising a MOS device, a dielectric layer, and a via hole penetrating though the dielectric layer, a conformal titanium layer is formed on the dielectric layer and the via hole. A low temperature annealing is formed in a nitrogen environment, so that a surface of the titanium layer is transformed into a first thin titanium nitride layer. A conformal second titanium nitride layer is formed on the first thin titanium nitride layer by using collimator sputtering. A metal layer is formed and etched back on the second titanium nitride layer to form a metal plug.
Inventors
- 👤 Yuan-Ching Peng
- 👤 Lih-Juann Chen
- 👤 Yu-Ru Yang
- 👤 Win-Yi Hsieh
- 👤 Yong-Fen Hsieh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 20:24
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/047; H10W20/048; H10W20/033
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
109 words
A method of fabricating a metal plug, wherein a semiconductor substrate comprising a MOS device, a dielectric layer, and a via hole penetrating though the dielectric layer is provided, comprising: forming a conformal glue layer on the dielectric layer and the via hole; performing a low temperature annealing, wherein the low temperature annealing is performed in a nitrogen environment at about 350° C. to 450° C. for about 10 min; after the step of performing the low temperature annealing, forming a conformal barrier layer above the glue layer by using collimator sputtering; and forming and etching back a metal layer on the barrier layer to form a metal plug.
Claim 2
Independent Claim
109 words
A method of fabricating a metal plug, wherein a semiconductor substrate comprising a MOS device, a dielectric layer, and a via hole penetrating though the dielectric layer is provided, comprising: forming a conformal glue layer on the dielectric layer and the via hole; performing a low temperature annealing, wherein the low temperature annealing is performed in a nitrogen environment at about 350° C. to 450° C. for about 10 min; after the step of performing the low temperature annealing, forming a conformal barrier layer above the glue layer by using collimator sputtering; and forming and etching back a metal layer on the barrier layer to form a metal plug.
Claim 3
Dependent Claim
14 words
The method according to claim 1, wherein the glue layer includes a titanium layer.
Claim 4
Dependent Claim
16 words
The method according to claim 2, wherein the glue layer is formed by DC magnetron sputtering.
Claim 5
Dependent Claim
26 words
The method according to claim 1, wherein after the low temperature annealing, an additional thin barrier layer is formed on a surface of the glue layer.
Claim 6
Dependent Claim
15 words
The method according to claim 1, wherein the barrier layer includes a titanium nitride layer.
Claim 7
Dependent Claim
15 words
The method according to claim 1, wherein the barrier layer is formed by reactive sputtering.
Claim 8
Dependent Claim
14 words
The method according to claim 1, wherein the metal layer includes a tungsten layer.
Claim 9
Dependent Claim
14 words
The method according to claim 7, wherein the metal plug includes a tungsten plug.
Claim 10
Dependent Claim
16 words
The method according to claim 1, the metal layer is etched back by an anisostropic etching.
Claim 11
Independent Claim
137 words
A method of fabricating a metal plug, wherein a semiconductor substrate comprising a MOS device, a dielectric layer, and a via hole penetrating though the dielectric layer is provided, comprising: forming a conformal titanium layer on the dielectric layer and the via hole; performing a low temperature annealing in a nitrogen environment, so that a surface of the titanium layer is transformed into a first thin titanium nitride layer, wherein the low temperature annealing is performed in a nitrogen environment at about 350° C. to 450° C. for about 10 min; after the step of performing the low temperature annealing, forming a conformal second titanium nitride layer above the first thin titanium nitride layer by using collimator sputtering; and forming and etching back a metal layer on the second titanium nitride layer to form a metal plug.
Claim 12
Independent Claim
137 words
A method of fabricating a metal plug, wherein a semiconductor substrate comprising a MOS device, a dielectric layer, and a via hole penetrating though the dielectric layer is provided, comprising: forming a conformal titanium layer on the dielectric layer and the via hole; performing a low temperature annealing in a nitrogen environment, so that a surface of the titanium layer is transformed into a first thin titanium nitride layer, wherein the low temperature annealing is performed in a nitrogen environment at about 350° C. to 450° C. for about 10 min; after the step of performing the low temperature annealing, forming a conformal second titanium nitride layer above the first thin titanium nitride layer by using collimator sputtering; and forming and etching back a metal layer on the second titanium nitride layer to form a metal plug.
Claim 13
Dependent Claim
16 words
The method according to claim 10, wherein the titanium layer is formed by DC magnetron sputtering.
Claim 14
Dependent Claim
17 words
The method according to claim 10, wherein the second titanium nitride layer is formed by reactive sputtering.
Claim 15
Dependent Claim
14 words
The method according to claim 1, wherein the metal layer includes a tungsten layer.
Claim 16
Dependent Claim
14 words
The method according to claim 13, wherein the metal plug includes a tungsten plug.
Claim 17
Dependent Claim
16 words
The method according to claim 1, the metal layer is etched back by an anisostropic etching.
References Cited (Backward Citations)
US5893749A
Cited
US5723362A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-03-28 | 2003-09-27 | 2004-03-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-03-28 | 2007-09-27 | 2008-03-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-03-28 | 2011-09-27 | 2012-03-28 | $7700.00 | Window Closed / Lapsed |