US5691235A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of depositing tungsten nitride using a source gas comprising silicon
Assignee: Micron Technology Inc
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Filing: 1996-06-12
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Granted: 1997-11-25
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Expires: 2016-06-12
Abstract
Abstract A method for depositing tungsten nitride uses a source gas mixture having a silicon based gas, such as silane for depositing the tungsten nitride to overlie a deposition substrate. A non-planar storage capacitor has a tungsten nitride capacitor electrode.
Inventors
- 👤 Scott Meikle
- 👤 Trung Doan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 01:45
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10W20/056
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
63 words
A method for forming a layer overlying a substrate, comprising the following steps: providing the substrate in a chamber; introducing a gas comprising nitride into the chamber; introducing a gas comprising tungsten into the chamber; introducing a gas comprising silicon into the chamber; providing conditions sufficient to deposit tungsten nitride; and depositing a layer of tungsten nitride comprising silicon to overly the substrate.
Claim 2
Independent Claim
63 words
A method for forming a layer overlying a substrate, comprising the following steps: providing the substrate in a chamber; introducing a gas comprising nitride into the chamber; introducing a gas comprising tungsten into the chamber; introducing a gas comprising silicon into the chamber; providing conditions sufficient to deposit tungsten nitride; and depositing a layer of tungsten nitride comprising silicon to overly the substrate.
Claim 3
Dependent Claim
32 words
The method as specified in claim 1, wherein said step of providing further comprises maintaining a temperature of an interior wall of the chamber at a temperature greater than 25 degrees Celsius.
Claim 4
Dependent Claim
31 words
The method as specified in claim 1, wherein said step of providing further comprises maintaining a temperature of an interior wall of the chamber at a temperature which minimizes adduct formation.
Claim 5
Dependent Claim
31 words
The method as specified in claim 1, further comprising: forming a via; depositing a portion of said layer of tungsten nitride comprising silicon in at least a portion of the via.
Claim 6
Dependent Claim
42 words
The method as specified in claim 1, further comprising: providing a via; lining a wall of the via with at least a portion of said layer of tungsten nitride comprising silicon; and substantially filling a remaining portion of the via with tungsten.
Claim 7
Dependent Claim
25 words
The method as specified in claim 1, further comprising forming said layer of tungsten nitride comprising silicon between a polysilicon layer and a tungsten layer.
Claim 8
Dependent Claim
31 words
The method as specified in claim 6, further comprising patterning and etching said polysilicon layer, said layer of tungsten nitride comprising silicon and said tungsten layer to form a gate electrode.
Claim 9
Dependent Claim
39 words
The method as specified in claim 1, further comprising adjusting a flow rate of said gas comprising silicon to be within a range of 0.1% to 25% of a total flow rate of remaining gases introduced into said chamber.
Claim 10
Dependent Claim
55 words
The method as specified in claim 1, further comprising: creating a first capacitor electrode layer overlying the substrate; creating a dielectric layer overlying said first capacitor electrode layer; depositing said layer of tungsten nitride comprising silicon to overly said dielectric layer; and creating a second capacitor electrode from said layer of tungsten nitride comprising silicon.
Claim 11
Dependent Claim
58 words
The method as specified in claim 1, further comprising: creating a first capacitor electrode layer overlying the substrate; creating a dielectric layer of tantalum oxide overlying said first capacitor electrode layer; depositing said layer of tungsten nitride comprising silicon to overly said dielectric layer; and creating a second capacitor electrode from said layer of tungsten nitride comprising silicon.
Claim 12
Independent Claim
63 words
A method for forming a layer overlying a substrate, comprising the following steps: providing the substrate in a chamber; introducing a gas comprising nitride into the chamber; introducing a gas comprising tungsten into the chamber; introducing a gas comprising silane into the chamber; providing conditions sufficient to deposit tungsten nitride; and depositing a layer of tungsten nitride comprising silicon to overly the substrate.
Claim 13
Independent Claim
63 words
A method for forming a layer overlying a substrate, comprising the following steps: providing the substrate in a chamber; introducing a gas comprising nitride into the chamber; introducing a gas comprising tungsten into the chamber; introducing a gas comprising silane into the chamber; providing conditions sufficient to deposit tungsten nitride; and depositing a layer of tungsten nitride comprising silicon to overly the substrate.
Claim 14
Independent Claim
104 words
A method for forming a capacitor electrode, comprising the following steps: providing a substrate in a chamber; introducing a gas comprising nitride into the chamber; introducing a gas comprising tungsten into the chamber; introducing a gas comprising silicon into the chamber; providing conditions sufficient to deposit tungsten nitride; depositing a layer of tungsten nitride comprising silicon to overly the substrate; patterning said layer of tungsten nitride comprising silicon to define the electrode; and removing a portion of said layer of tungsten nitride comprising silicon, a remaining portion of said layer of tungsten nitride comprising silicon forming at least a portion of the capacitor electrode.
Claim 15
Independent Claim
104 words
A method for forming a capacitor electrode, comprising the following steps: providing a substrate in a chamber; introducing a gas comprising nitride into the chamber; introducing a gas comprising tungsten into the chamber; introducing a gas comprising silicon into the chamber; providing conditions sufficient to deposit tungsten nitride; depositing a layer of tungsten nitride comprising silicon to overly the substrate; patterning said layer of tungsten nitride comprising silicon to define the electrode; and removing a portion of said layer of tungsten nitride comprising silicon, a remaining portion of said layer of tungsten nitride comprising silicon forming at least a portion of the capacitor electrode.
Claim 16
Independent Claim
105 words
A method for forming a gate electrode, comprising the following steps: providing a substrate in a chamber; introducing a gas comprising nitride into the chamber; introducing a gas comprising tungsten into the chamber; introducing a gas comprising silicon into the chamber; providing conditions sufficient to deposit tungsten nitride; depositing a layer of tungsten nitride comprising silicon to overly the substrate; patterning said layer of tungsten nitride comprising silicon to define the gate electrode; and removing a portion of said layer of tungsten nitride comprising silicon, a remaining portion of said layer of tungsten nitride comprising silicon forming at least a portion of the gate electrode.
Claim 17
Independent Claim
105 words
A method for forming a gate electrode, comprising the following steps: providing a substrate in a chamber; introducing a gas comprising nitride into the chamber; introducing a gas comprising tungsten into the chamber; introducing a gas comprising silicon into the chamber; providing conditions sufficient to deposit tungsten nitride; depositing a layer of tungsten nitride comprising silicon to overly the substrate; patterning said layer of tungsten nitride comprising silicon to define the gate electrode; and removing a portion of said layer of tungsten nitride comprising silicon, a remaining portion of said layer of tungsten nitride comprising silicon forming at least a portion of the gate electrode.
Claim 18
Dependent Claim
89 words
The method as specified in claim 13, further comprising: forming a layer of silicon to overlie said substrate prior to said step of depositing said layer of tungsten nitride comprising silicon; forming a layer of tungsten to overlie said layer of tungsten nitride comprising silicon; and removing portions of said layer of tungsten and portions of said layer of silicon according to a pattern defined during said step of patterning, remaining portions of said layer of tungsten and said layer of silicon forming further portions of the gate electrode.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-11-24 | 2001-05-26 | 2001-11-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-11-24 | 2005-05-26 | 2005-11-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-11-24 | 2009-05-26 | 2009-11-25 | $7700.00 | Window Closed / Lapsed |