US5238872A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Barrier metal contact architecture
Assignee: Samsung Semiconductor Inc
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Filing: 1992-10-02
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Granted: 1993-08-24
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Expires: 2012-10-02
Abstract
Abstract The interconnect system of the present invention is comprised of a TiW metal barrier layer as well as a Ti metal barrier layer deposited on the silicon surface. An anisotropic etch process for the Ti/TiW/Al metal sandwich has also been developed without corrosion and metal residue. The addition of the Ti layer between the TiW layer and the silicon surface reduces the contact resistance between the metal and P + silicon contact. This Ti layer also effectively improves the blocking of aluminum migration to the silicon surface through TiW grain boundaries. In order to realize good ohmic metal-P + contacts, the surface concentration of the silicon should be very high. Therefore, the present invention also employs a plasma mode etch which removes about 250 Å silicon since peak concentrations of P + dopants (boron) are often found about 400 Å below the silicon surface. This plasma mode etch will also remove silicon damage caused by previous etching. A detailed etching process is also developed in the present invention so as to avoid any corrosion or metal residue.
Inventors
- 👤 Gurunada Thalapaneni
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 23:39
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10W20/032; H10W20/033
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
218 words
A method for forming a barrier metal scheme for an interconnect system implemented in integrated devices comprising the following steps: providing in a first conductivity type substrate a first buried layer of a second conductivity type; forming a well for a contact area of said first conductivity type implanted into said first buried layer; etching away a portion of said contact area; forming a first oxide layer over said substrate and etching away said first oxide layer form said buried layer; forming a silicate glass layer over said first oxide layer and etching away said silicate glass layer from said contact area; forming a titanium layer over said silicate glass layer and said contact area; forming a metal barrier layer over said titanium layer; forming an aluminum layer over said metal barrier layer and physically contacting said metal barrier layer at said well; patterning said aluminum, metal barrier and titanium layers leaving said layers only over said contact area; said patterning comprising the following etching steps: a native oxide etch to break through native oxide of aluminum; an aluminum etch using chlorine, BCl 3 and trifluoromethane, an aluminum over-etch; a Ti/metal barrier etch using tetrafluoromethane a Ti overetch to remove Ti stringers using tetrafluoromethane BCl 3 and Cl 2 ; a passivation etch using trifluoromethane to avoid corrosion.
Claim 2
Independent Claim
218 words
A method for forming a barrier metal scheme for an interconnect system implemented in integrated devices comprising the following steps: providing in a first conductivity type substrate a first buried layer of a second conductivity type; forming a well for a contact area of said first conductivity type implanted into said first buried layer; etching away a portion of said contact area; forming a first oxide layer over said substrate and etching away said first oxide layer form said buried layer; forming a silicate glass layer over said first oxide layer and etching away said silicate glass layer from said contact area; forming a titanium layer over said silicate glass layer and said contact area; forming a metal barrier layer over said titanium layer; forming an aluminum layer over said metal barrier layer and physically contacting said metal barrier layer at said well; patterning said aluminum, metal barrier and titanium layers leaving said layers only over said contact area; said patterning comprising the following etching steps: a native oxide etch to break through native oxide of aluminum; an aluminum etch using chlorine, BCl 3 and trifluoromethane, an aluminum over-etch; a Ti/metal barrier etch using tetrafluoromethane a Ti overetch to remove Ti stringers using tetrafluoromethane BCl 3 and Cl 2 ; a passivation etch using trifluoromethane to avoid corrosion.
Claim 3
Dependent Claim
12 words
The method of claim 1 wherein said first conductivity type is P-type.
Claim 4
Dependent Claim
18 words
The method of claim 2 wherein said first oxide layer is a field oxide of approximately 5,000 Å.
Claim 5
Dependent Claim
16 words
The method of claim 3 wherein said silicate glass is borophosphosilicate glass of approximately 6,000-10,000 Å.
Claim 6
Dependent Claim
13 words
The method of claim 1 wherein said Ti layer is approximately 500 Å.
Claim 7
Dependent Claim
18 words
The method of claim 1 wherein said metal barrier is comprised of TiW and is approximately 1,000 Å.
Claim 8
Dependent Claim
13 words
The method of claim 1 wherein said aluminum layer is approximately 6,500 Å.
Claim 9
Dependent Claim
16 words
The method of claim 1 wherein the etching of said well is approximately 200-300 Å deep.
Claim 10
Independent Claim
205 words
A method for forming a barrier metal scheme for an interconnect system in integrated devices comprising the following steps: providing in a first conductivity type substrate a first buried layer of a second conductivity type; forming a well for a contact area of said first conductivity type implanted into said first buried layer; etching away a portion of said contact area; forming a first oxide layer over said substrate and etching away said first oxide layer from said buried layer; forming a silicate glass layer over said first oxide layer and etching away said silicate glass layer from said contact area; forming a titanium layer over said silicate glass layer and said contact area; forming a metal barrier layer over said titanium layer; forming an aluminum layer over said metal barrier layer; patterning said aluminum, metal barrier and titanium layers leaving said layers only over said contact area comprising the following etching steps: a native oxide etch to break through native oxide of aluminum; an aluminum etch using chlorine, BCl 3 and trifluoromethane an aluminum overetch; a Ti/metal barrier etch using tetrafluoromethane a Ti overetch to remove Ti stringers using tetrafluoromethane BCl 3 and Cl 2 ; a passivation etch using trifluoromethane to avoid corrosion.
Claim 11
Independent Claim
205 words
A method for forming a barrier metal scheme for an interconnect system in integrated devices comprising the following steps: providing in a first conductivity type substrate a first buried layer of a second conductivity type; forming a well for a contact area of said first conductivity type implanted into said first buried layer; etching away a portion of said contact area; forming a first oxide layer over said substrate and etching away said first oxide layer from said buried layer; forming a silicate glass layer over said first oxide layer and etching away said silicate glass layer from said contact area; forming a titanium layer over said silicate glass layer and said contact area; forming a metal barrier layer over said titanium layer; forming an aluminum layer over said metal barrier layer; patterning said aluminum, metal barrier and titanium layers leaving said layers only over said contact area comprising the following etching steps: a native oxide etch to break through native oxide of aluminum; an aluminum etch using chlorine, BCl 3 and trifluoromethane an aluminum overetch; a Ti/metal barrier etch using tetrafluoromethane a Ti overetch to remove Ti stringers using tetrafluoromethane BCl 3 and Cl 2 ; a passivation etch using trifluoromethane to avoid corrosion.
Claim 12
Dependent Claim
12 words
The method of claim 9 wherein said first conductivity type is P-type.
Claim 13
Dependent Claim
18 words
The method of claim 10 wherein said first oxide layer is a field oxide of approximately 5,000 Å.
Claim 14
Dependent Claim
16 words
The method of claim 11 wherein said silicate glass is borophosphosilicate glass of approximately 6,000-10,000 Å.
Claim 15
Dependent Claim
13 words
The method of claim 12 wherein said Ti layer is approximately 500 Å.
Claim 16
Dependent Claim
18 words
The method of claim 13 wherein said metal barrier is comprised of TiW and is approximately 1,000 Å.
Claim 17
Dependent Claim
13 words
The method of claim 14 wherein said aluminum layer is approximately 6,500 Å.
Claim 18
Dependent Claim
16 words
The method of claim 15 wherein the etching of said well is approximately 200-300 Å deep.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-08-23 | 1997-02-22 | 1997-08-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-08-23 | 2001-02-22 | 2001-08-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-08-23 | 2005-02-22 | 2005-08-24 | $7700.00 | Window Closed / Lapsed |