US6833161B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Cyclical deposition of tungsten nitride for metal oxide gate electrode
Assignee: Applied Materials Inc
•
Filing: 2002-02-26
•
Granted: 2004-12-21
•
Expires: 2022-02-26
Abstract
Abstract A method for depositing a tungsten nitride layer is provided. The method includes a cyclical process of alternately adsorbing a tungsten-containing compound and a nitrogen-containing compound on a substrate. The barrier layer has a reduced resistivity, lower concentration of fluorine, and can be deposited at any desired thickness, such as less than 100 angstroms, to minimize the amount of barrier layer material.
Inventors
- 👤 Shulin Wang
- 👤 Ulrich Kroemer
- 👤 Lee Luo
- 👤 Aihua Chen
- 👤 Ming Li
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:42
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/02; C23C16/22; C23C16/30; C23C16/34; H; H10; H10D; H10D1/00; H10D1/01; H10D1/045; H10D1/047; H10D1/60; H10D1/68; H10D1/692; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312; H10D64/60; H10D64/66; H10D64/661; H10D64/662; H10D64/664; H10P; H10P14/00; H10P14/40; H10P14/418; H10P14/42; H10P14/43; H10P14/432; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/038
Claims Analysis
Total Claims: 57
Claim 1
Independent Claim
41 words
A method for forming a tungsten layer, comprising: depositing a tungsten nitride barrier layer by alternately pulsing a first tungsten-containing compound and a nitrogen-containing compound; and depositing a tungsten layer by alternately pulsing a second tungsten-containing compound and a reducing compound.
Claim 2
Independent Claim
41 words
A method for forming a tungsten layer, comprising: depositing a tungsten nitride barrier layer by alternately pulsing a first tungsten-containing compound and a nitrogen-containing compound; and depositing a tungsten layer by alternately pulsing a second tungsten-containing compound and a reducing compound.
Claim 3
Dependent Claim
32 words
The method of claim 1 , wherein the first tungsten-containing compound and the second tungsten-containing compound are each selected from the group consisting of tungsten hexafluoride, tungsten hexacarbonyl, and a combination thereof.
Claim 4
Dependent Claim
20 words
The method of claim 1 , wherein the first tungsten-containing compound and the second tungsten-containing compound both comprise tungsten hexafluoride.
Claim 5
Dependent Claim
34 words
The method of claim 1 , wherein the nitrogen-containing compound is selected from the group consisting of nitrogen gas, ammonia, hydrazine, monomethyl hydrazine, dimethyl hydrazine, t-butyl hydrazine, phenyl hydrazine, 2,2′-azoisobutane, ethylazide, and combinations thereof.
Claim 6
Dependent Claim
12 words
The method of claim 1 , wherein the nitrogen-containing compound comprises ammonia.
Claim 7
Dependent Claim
34 words
The method of claim 1 , wherein the reducing compound is selected from the group consisting of silane, disilane, dichlorosilane, borane, diborane, triborane, tetraborane, pentaborane, hexaborane, heptaborane, octaborane, nonaborane and decaborane, and combinations thereof.
Claim 8
Dependent Claim
12 words
The method of claim 1 , wherein the reducing compound comprises silane.
Claim 9
Dependent Claim
11 words
The method of claim 1 , further comprising continuously flowing argon.
Claim 10
Dependent Claim
26 words
The method of claim 1 , wherein the pulsing occurs at a pressure of about 1.5 Torr and a temperature of about 550° C. or more.
Claim 11
Dependent Claim
27 words
The method of claim 1 , wherein each pulse of the first and second tungsten-containing compounds has a duration between about 0.2 seconds and about 1 second.
Claim 12
Dependent Claim
24 words
The method of claim 1 , wherein each pulse of the nitrogen-containing compound has a duration between about 0.2 seconds and about 1 second.
Claim 13
Dependent Claim
24 words
The method of claim 1 , wherein each pulse of the reducing compound has a duration between about 0.2 seconds and about 1 second.
Claim 14
Dependent Claim
27 words
The method of claim 1 , wherein each pulse of the first and second tungsten-containing compounds has a flowrate between about 1 sccm and about 400 sccm.
Claim 15
Dependent Claim
24 words
The method of claim 1 , wherein each pulse of the nitrogen-containing compound has a flowrate between about 5 sccm and about 150 sccm.
Claim 16
Dependent Claim
24 words
The method of claim 1 , wherein each pulse of the reducing compound has a flowrate between about 5 sccm and about 150 sccm.
Claim 17
Dependent Claim
19 words
The method of claim 1 , wherein the tungsten nitride barrier layer has a thickness of about 20 angstroms.
Claim 18
Dependent Claim
17 words
The method of claim 1 , wherein the tungsten layer has a thickness greater than 300 angstroms.
Claim 19
Dependent Claim
23 words
The method of claim 1 , further comprising pulsing argon between the alternate pulses of the first tungsten-containing compound and the nitrogen-containing compound.
Claim 20
Dependent Claim
23 words
The method of claim 1 , further comprising pulsing argon between the alternate pulses of the second tungsten-containing compound and the reducing compound.
Claim 21
Independent Claim
34 words
A method for forming a tungsten layer, comprising: depositing a tungsten nitride barrier layer by alternately pulsing a first tungsten-containing compound and a nitrogen-containing compound; and depositing a tungsten layer on the barrier layer.
Claim 22
Independent Claim
34 words
A method for forming a tungsten layer, comprising: depositing a tungsten nitride barrier layer by alternately pulsing a first tungsten-containing compound and a nitrogen-containing compound; and depositing a tungsten layer on the barrier layer.
Claim 23
Dependent Claim
21 words
The method of claim 20 , wherein the tungsten layer is deposited by chemical vapor deposition or physical vapor deposition techniques.
Claim 24
Dependent Claim
23 words
The method of claim 20 , wherein the tungsten layer is deposited by alternately pulsing a second tungsten-containing compound and a reducing compound.
Claim 25
Dependent Claim
49 words
The method of claim 22 , wherein the tungsten layer is deposited by alternately pulsing the second tungsten-containing compound and the reducing compound to form a pre-layer having a thickness of about 50 angstroms or less followed by bulk tungsten deposition using chemical vapor deposition or physical vapor deposition.
Claim 26
Dependent Claim
25 words
The method claim 20 , wherein the first tungsten-containing compound is selected from the group consisting of tungsten hexafluoride, tungsten hexacarbonyl, and a combination thereof.
Claim 27
Dependent Claim
26 words
The method of claim 22 , wherein the second tungsten-containing compound is selected from the group consisting of tungsten hexafluoride, tungsten hexacarbonyl, and a combination thereof.
Claim 28
Dependent Claim
20 words
The method of claim 22 , wherein the first tungsten-containing compound and the second tungsten-containing compound both comprise tungsten hexafluoride.
Claim 29
Dependent Claim
34 words
The method of claim 20 , wherein the nitrogen-containing compound is selected from the group consisting of nitrogen gas, ammonia, hydrazine, monomethyl hydrazine, dimethyl hydrazine, t-butyl hydrazine, phenyl hydrazine, 2,2′-azoisobutane, ethylazide, and combinations thereof.
Claim 30
Dependent Claim
34 words
The method of claim 22 , wherein the reducing compound is selected from the group consisting of silane, disilane, dichlorosilane, borane, diborane, triborane, tetraborane, pentaborane, hexaborane, heptaborane, octaborane, nonaborane and decaborane, and combinations thereof.
Claim 31
Dependent Claim
12 words
The method of claim 22 , wherein the reducing compound comprises silane.
Claim 32
Dependent Claim
11 words
The method of claim 20 , further comprising continuously flowing argon.
Claim 33
Dependent Claim
26 words
The method of claim 20 , wherein the pulsing occurs at a pressure of about 1.5 Torr and a temperature of about 550° C. or more.
Claim 34
Dependent Claim
30 words
The method of claim 20 , wherein the tungsten nitride barrier layer has a thickness less than 20 angstroms and the tungsten layer has a thickness greater than 300 angstroms.
Claim 35
Independent Claim
96 words
A method for forming a metal gate electrode, comprising: heating a wafer having a polysilicon layer disposed thereon to a temperature of about 550° C. or more; forming a chlorine terminated surface by exposing the polysilicon layer to a chlorine-containing compound; depositing a tungsten nitride barrier layer over the polysilicon layer, wherein the tungsten nitride barrier layer is formed by alternately pulsing a first tungsten-containing compound and a nitrogen-containing compound until a tungsten nitride layer having a thickness less than about 50 angstroms is deposited; and depositing a tungsten layer on the tungsten nitride barrier layer.
Claim 36
Independent Claim
96 words
A method for forming a metal gate electrode, comprising: heating a wafer having a polysilicon layer disposed thereon to a temperature of about 550° C. or more; forming a chlorine terminated surface by exposing the polysilicon layer to a chlorine-containing compound; depositing a tungsten nitride barrier layer over the polysilicon layer, wherein the tungsten nitride barrier layer is formed by alternately pulsing a first tungsten-containing compound and a nitrogen-containing compound until a tungsten nitride layer having a thickness less than about 50 angstroms is deposited; and depositing a tungsten layer on the tungsten nitride barrier layer.
Claim 37
Dependent Claim
12 words
The method of claim 33 , wherein the chlorine-containing compound comprises dichlorosilane.
Claim 38
Dependent Claim
21 words
The method of claim 33 , wherein the nitrogen-containing compound is pulsed first and the first tungsten-containing compound is pulsed second.
Claim 39
Dependent Claim
23 words
The method of claim 33 , wherein the tungsten layer is deposited by alternately pulsing a second tungsten-containing compound and a reducing compound.
Claim 40
Dependent Claim
20 words
The method of claim 33 , wherein the tungsten layer is deposited by chemical vapor deposition or physical vapor deposition.
Claim 41
Dependent Claim
50 words
The method of claim 36 , wherein the tungsten layer is deposited by alternately pulsing the second tungsten-containing compound and the reducing compound to form a pre-layer having a thickness of about 50 angstroms or less followed by chemical vapor deposition or physical vapor deposition to complete the tungsten layer.
Claim 42
Dependent Claim
17 words
The method of claim 33 , wherein the tungsten layer has a thickness greater than 300 angstroms.
Claim 43
Dependent Claim
26 words
The method of claim 33 , wherein the first tungsten-containing compound is selected from the group consisting of tungsten hexafluoride, tungsten hexacarbonyl, and a combination thereof.
Claim 44
Dependent Claim
26 words
The method of claim 36 , wherein the second tungsten-containing compound is selected from the group consisting of tungsten hexafluoride, tungsten hexacarbonyl, and a combination thereof.
Claim 45
Dependent Claim
34 words
The method of claim 33 , wherein the nitrogen-containing compound is selected from the group consisting of nitrogen gas, ammonia, hydrazine, monomethyl hydrazine, dimethyl hydrazine, t-butyl hydrazine, phenyl hydrazine, 2,2′-azoisobutane ethylazide, and combinations thereof.
Claim 46
Dependent Claim
34 words
The method of claim 36 , wherein the reducing compound is selected from the group consisting of silane, disilane, dichlorosilane, borane, diborane, triborane, tetraborane, pentaborane, hexaborane, heptaborane, octaborane, nonaborane and decaborane, and combinations thereof.
Claim 47
Dependent Claim
12 words
The method of claim 36 , wherein the reducing compound comprises silane.
Claim 48
Dependent Claim
11 words
The method of claim 33 , further comprising continuously flowing argon.
Claim 49
Dependent Claim
17 words
The method of claim 33 , wherein the pulsing occurs at a pressure of about 1.5 Torr.
Claim 50
Independent Claim
82 words
A method for forming a metal gate electrode on a wafer, comprising: heating a wafer having a polysilicon layer disposed thereon to a temperature of about 550°C. or more; forming a chlorine terminated surface by exposing the polysilicon layer to a chlorine-containing compound; reducing the chlorine terminated surface by exposing the polysilicon layer to a nitrogen-containing compound; and depositing a tungsten layer over the polysilicon layer, wherein the tungsten layer is formed by alternately pulsing a tungsten-containing compound and a reducing compound.
Claim 51
Independent Claim
82 words
A method for forming a metal gate electrode on a wafer, comprising: heating a wafer having a polysilicon layer disposed thereon to a temperature of about 550°C. or more; forming a chlorine terminated surface by exposing the polysilicon layer to a chlorine-containing compound; reducing the chlorine terminated surface by exposing the polysilicon layer to a nitrogen-containing compound; and depositing a tungsten layer over the polysilicon layer, wherein the tungsten layer is formed by alternately pulsing a tungsten-containing compound and a reducing compound.
Claim 52
Dependent Claim
53 words
The method of claim 47 , further comprising depositing a tungsten nitride barrier layer over the polysilicon layer prior to depositing the tungsten layer, wherein the tungsten nitride barrier layer is formed by alternately pulsing tungsten hexafluoride and ammonia until a tungsten nitride layer having a thickness less than 50 angstroms is deposited.
Claim 53
Dependent Claim
12 words
The method of claim 47 , wherein the chlorine-containing compound comprises dichlorosilane.
Claim 54
Dependent Claim
34 words
The method of claim 47 , wherein the reducing compound is selected from the group consisting of silane, disilane, dichlorosilane, borane, diborane, triborane, tetraborane, pentaborane, hexaborane, heptaborane, octaborane, nonaborane and decaborane, and combinations thereof.
Claim 55
Dependent Claim
25 words
The method of claim 47 , wherein the tungsten-containing compound is selected from the group consisting of tungsten hexafluoride, tungsten hexacarbonyl, and a combination thereof.
Claim 56
Dependent Claim
34 words
The method of claim 47 , wherein the nitrogen-containing compound is selected from the group consisting of nitrogen gas, ammonia, hydrazine, monomethyl hydrazine, dimethyl hydrazine, t-butyl hydrazine, phenyl hydrazine, 2,2′-azoisobutane, ethylazide, and combinations thereof.
Claim 57
Dependent Claim
17 words
The method of claim 47 , wherein the tungsten layer has a thickness greater than 300 angstroms.
References Cited (Backward Citations)
US6482262B1
Cited
US4058430A
Cited
US4413022A
Cited
US4389973A
Cited
US4486487A
Cited
JPS6065712A
Cited
US5443033A
Cited
US4806321A
Cited
US5693139A
Cited
US5294286A
Cited
US4975252A
Cited
US5250148A
Cited
US4829022A
Cited
US4917556A
Cited
US4838983A
Cited
US4767494A
Cited
US4960720A
Cited
US4859307A
Cited
US5246536A
Cited
US4834831A
Cited
US4838993A
Cited
US5882165A
Cited
US4951601A
Cited
US5000113A
Cited
US5923985A
Cited
US4813846A
Cited
US4861417A
Cited
US4845049A
Cited
US5348911A
Cited
US5441703A
Cited
US4840921A
Cited
US4859627A
Cited
US4876218A
Cited
US4993357A
Cited
FR2626110A1
Cited
US5166092A
Cited
US5300186A
Cited
US5484664A
Cited
US5130269A
Cited
EP0344352A1
Cited
US5439876A
Cited
US4927670A
Cited
US5234561A
Cited
US4931132A
Cited
US5013683A
Cited
US5374570A
Cited
JPH0348421A
Cited
US5186718A
Cited
JPH0319211A
Cited
JPH0323294A
Cited
JPH0323299A
Cited
JPH0322569A
Cited
JPH0344967A
Cited
US5527733A
Cited
JPH0370124A
Cited
US5028565A
Cited
EP0429270A2
Cited
US5925574A
Cited
JPH03185716A
Cited
JPH03208885A
Cited
US5290748A
Cited
US5338389A
Cited
US5296403A
Cited
JPH03234025A
Cited
EP0442290A1
Cited
US5316615A
Cited
JPH03286531A
Cited
JPH03286522A
Cited
US5082798A
Cited
US5173474A
Cited
JPH0431391A
Cited
JPH0431396A
Cited
US5091320A
Cited
JPH04212411A
Cited
US5281274A
Cited
US5225366A
Cited
JPH04100292A
Cited
US5205077A
Cited
JPH04111418A
Cited
US5483919A
Cited
US5085885A
Cited
JPH04132214A
Cited
JPH04132681A
Cited
JPH04151822A
Cited
JPH04162418A
Cited
JPH04175299A
Cited
JPH04186824A
Cited
US5286296A
Cited
US5705224A
Cited
US5259881A
Cited
US5270247A
Cited
US5637530A
Cited
US6001669A
Cited
US5311055A
Cited
US5254207A
Cited
US5336324A
Cited
US5580380A
Cited
US5480818A
Cited
US5256244A
Cited
US5458084A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2007-12-21 | 2008-06-21 | 2008-12-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2011-12-21 | 2012-06-21 | 2012-12-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2015-12-21 | 2016-06-21 | 2016-12-21 | $7700.00 | Window Closed / Lapsed |