US7087481B2
Expired / Lapsed
US
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Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands
Assignee: Micron Technology Inc
•
Filing: 2002-08-28
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Granted: 2006-08-08
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Expires: 2022-08-28
Abstract
Abstract A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include aminosilane ligands.
Inventors
- 👤 Brian A. Vaartstra
- 👤 Timothy A. Quick
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:43
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/405; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45553; H10P14/66; H10P14/668; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69393; H10D; H10D1/00; H10D1/60; H10D1/68; H10P14/6339; H10P14/6921; H10P14/69215; H10P14/69397
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
95 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing at least one precursor compound of the formula Y[N(tBu)Si(H)(Me) 2 ] 3 (Formula I); providing at least one source of oxygen; and contacting the at least one precursor compound and the at least one source of oxygen to form a metal oxide layer on one or more surfaces of the semiconductor substrate or substrate assembly using a vapor deposition process, wherein the metal oxide layer further comprises silicon that comes from the precursor compound of Formula I.
Claim 2
Independent Claim
95 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing at least one precursor compound of the formula Y[N(tBu)Si(H)(Me) 2 ] 3 (Formula I); providing at least one source of oxygen; and contacting the at least one precursor compound and the at least one source of oxygen to form a metal oxide layer on one or more surfaces of the semiconductor substrate or substrate assembly using a vapor deposition process, wherein the metal oxide layer further comprises silicon that comes from the precursor compound of Formula I.
Claim 3
Dependent Claim
16 words
The method of claim 1 wherein the semiconductor substrate or substrate assembly is a silicon wafer.
Claim 4
Dependent Claim
14 words
The method of claim 1 wherein the metal oxide layer is a dielectric layer.
Claim 5
Dependent Claim
21 words
The method of claim 1 wherein the metal oxide layer has a thickness of about 30 Å to about 80 Å.
Claim 6
Dependent Claim
23 words
The method of claim 1 further comprising providing at least one metal-containing precursor compound of a formula different than that of Formula I.
Claim 7
Dependent Claim
24 words
The method of claim 5 wherein the source of oxygen is the metal-containing precursor compound of a formula different than that of Formula I.
Claim 8
Dependent Claim
13 words
The method of claim 1 wherein the metal oxide comprises two different metals.
Claim 9
Independent Claim
96 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly within a deposition chamber; providing a vapor comprising at least one precursor compound of the formula Y[N(tBu)Si(H)(Me) 2 ] 3 (Formula I); providing a vapor comprising at least one source of oxygen; and directing the vapors to the semiconductor substrate or substrate assembly to form a metal oxide dielectric layer on one or more surfaces of the semiconductor substrate or substrate assembly, wherein the metal oxide layer further comprises silicon that comes from the precursor compound of Formula I.
Claim 10
Independent Claim
96 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly within a deposition chamber; providing a vapor comprising at least one precursor compound of the formula Y[N(tBu)Si(H)(Me) 2 ] 3 (Formula I); providing a vapor comprising at least one source of oxygen; and directing the vapors to the semiconductor substrate or substrate assembly to form a metal oxide dielectric layer on one or more surfaces of the semiconductor substrate or substrate assembly, wherein the metal oxide layer further comprises silicon that comes from the precursor compound of Formula I.
Claim 11
Dependent Claim
26 words
The method of claim 8 wherein the precursor compounds are directed to the semiconductor substrate or substrate assembly in the presence of an inert carrier gas.
Claim 12
Dependent Claim
19 words
The method of claim 8 wherein the providing and directing steps are accomplished using a chemical vapor deposition process.
Claim 13
Dependent Claim
23 words
The method of claim 10 wherein the temperature of the semiconductor substrate or substrate assembly is about 100° C. to about 600° C.
Claim 14
Dependent Claim
28 words
The method of claim 10 wherein the semiconductor substrate or substrate assembly is in a deposition chamber having a pressure of about 0.1 torr to about 10 torr.
Claim 15
Dependent Claim
25 words
The method of claim 8 wherein the providing and directing steps are accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 16
Dependent Claim
43 words
The method of claim 13 wherein during the atomic layer deposition process the metal oxide layer is formed by alternately introducing the vapor comprising at least one precursor compound and the vapor comprising at least one source of oxygen during each deposition cycle.
Claim 17
Dependent Claim
23 words
The method of claim 13 wherein the temperature of the semiconductor substrate or substrate assembly is about 25° C. to about 400° C.
Claim 18
Dependent Claim
29 words
The method of claim 13 wherein the semiconductor substrate or substrate assembly is in a deposition chamber having a pressure of about 10 −4 torr to about 1 torr.
Claim 19
Dependent Claim
13 words
The method of claim 8 wherein the metal oxide comprises two different metals.
Claim 20
Dependent Claim
26 words
The method of claim 8 further comprising providing a vapor comprising at least one metal-containing precursor compound of a formula different than that of Formula I.
Claim 21
Dependent Claim
24 words
The method of claim 18 wherein the source of oxygen is the metal-containing precursor compound of a formula different than that of Formula I.
Claim 22
Dependent Claim
20 words
The method of claim 1 wherein Si remains in the metal oxide layer after rapid thermal oxidation at 700° C.
Claim 23
Dependent Claim
24 words
The method of claim 20 wherein about 16 atom % Si remains in the metal oxide layer after rapid thermal oxidation at 700° C.
Claim 24
Dependent Claim
20 words
The method of claim 8 wherein Si remains in the metal oxide layer after rapid thermal oxidation at 700° C.
Claim 25
Dependent Claim
24 words
The method of claim 22 wherein about 16 atom % Si remains in the metal oxide layer after rapid thermal oxidation at 700° C.
Claim 26
Independent Claim
77 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing at least one precursor compound of the formula Y[N(tBU)Si(H)(Me) 2 ] 3 ; providing at least one source of oxygen; and contacting the at least one precursor compound and the at least one source of oxygen to form a metal oxide layer on one or more surfaces of the semiconductor substrate or substrate assembly using a vapor deposition process.
Claim 27
Independent Claim
77 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing at least one precursor compound of the formula Y[N(tBU)Si(H)(Me) 2 ] 3 ; providing at least one source of oxygen; and contacting the at least one precursor compound and the at least one source of oxygen to form a metal oxide layer on one or more surfaces of the semiconductor substrate or substrate assembly using a vapor deposition process.
Claim 28
Independent Claim
78 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly within a deposition chamber; providing a vapor comprising at least one precursor compound of the formula Y[N(tBu)Si(H)(Me) 2 ] 3 ; providing a vapor comprising at least one source of oxygen; and directing the vapors to the semiconductor substrate or substrate assembly to form a metal oxide dielectric layer on one or more surfaces of the semiconductor substrate or substrate assembly.
Claim 29
Independent Claim
78 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly within a deposition chamber; providing a vapor comprising at least one precursor compound of the formula Y[N(tBu)Si(H)(Me) 2 ] 3 ; providing a vapor comprising at least one source of oxygen; and directing the vapors to the semiconductor substrate or substrate assembly to form a metal oxide dielectric layer on one or more surfaces of the semiconductor substrate or substrate assembly.
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