US6444041B2
Expired / Lapsed
US
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Methods, complexes, and system for forming metal-containing films
Assignee: Micron Technology Inc
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Filing: 2001-08-30
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Granted: 2002-09-03
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Expires: 2021-08-30
Abstract
Abstract A method of forming a film on a substrate using Group III metal complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.
Inventors
- 👤 Brian A. Vaartstra
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:55
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/06; C23C16/18; C07; C07F; C07F5/00; C07F5/06; C07F5/061; C07F5/065; C07F5/066; C23C16/22; C23C16/30; C23C16/301; H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
112 words
A chemical vapor deposition system comprising: a deposition chamber having a substrate positioned therein; a vessel containing a precursor comprising one or more complexes of the formula: M{[(C(R 1 ) 2 ) n ] x N(R 2 ) 3−x }(R 3 ) y (R 4 ) z (Formula I) wherein: M is a Group III metal; each R 1 , R 2 , R 3 , and R 4 group is independently H or an organic group; x=1 to3; n=1 to 6; y 1 when x=1 and y=3−x when x=2 or 3; and z=3−x−y; and a source of an inert carrier gas for transferring the precursor to the chemical vapor deposition chamber.
Claim 2
Dependent Claim
112 words
A chemical vapor deposition system comprising: a deposition chamber having a substrate positioned therein; a vessel containing a precursor comprising one or more complexes of the formula: M{[(C(R 1 ) 2 ) n ] x N(R 2 ) 3−x }(R 3 ) y (R 4 ) z (Formula I) wherein: M is a Group III metal; each R 1 , R 2 , R 3 , and R 4 group is independently H or an organic group; x=1 to3; n=1 to 6; y 1 when x=1 and y=3−x when x=2 or 3; and z=3−x−y; and a source of an inert carrier gas for transferring the precursor to the chemical vapor deposition chamber.
Claim 3
Dependent Claim
12 words
The system of claim 1 wherein the substrate is a silicon wafer.
Claim 4
Dependent Claim
18 words
The system of claim 1 wherein M is selected from the group consisting of Al, Ga, and In.
Claim 5
Dependent Claim
17 words
The system of claim 1 wherein at least one of R 3 and R 4 is H.
Claim 6
Dependent Claim
31 words
The system of claim 1 wherein each R 1 , R 2 , R 3 , and R 4 group is independently H or a (C 1 -C 8 )hydrocarbon group.
Claim 7
Dependent Claim
31 words
The system of claim 1 wherein each R 1 , R 2 , R 3 , and R 4 group is independently H or a (C 1 −C 201 )hydrocarbon group.
Claim 8
Dependent Claim
31 words
The system of claim 1 wherein each R 1 , R 2 , R 3 , and R 4 group is independently H or a (C 1 -C 4 )alkyl moiety.
Claim 9
Dependent Claim
11 words
The system of claim 1 wherein the precursor is a liquid.
Claim 10
Dependent Claim
13 words
The system of claim 1 further comprising a source of a reaction gas.
Claim 11
Dependent Claim
19 words
The system of claim 1 wherein the precursor further comprises one or more compounds containing a Group V element.
Claim 12
Dependent Claim
110 words
A chemical vapor deposition system comprising: a deposition chamber having a substrate positioned therein; a vessel containing a precursor comprising one or more complexes of the formula: M{[(C(R 1 ) 2 ) n ]N(R 2 ) 2 }(R 3 )(R 4 ) wherein: M is a Group m metal; each R 1 , R 2 , R 3 , and R 4 group is independently H or a (C 1 -C 30 )hydrocarbon group wherein optionally R 3 and R 4 are joined to form a ring or rings with the metal and none of the other R groups are joined together to form ring systems; and n=1 to 6.
Claim 13
Dependent Claim
110 words
A chemical vapor deposition system comprising: a deposition chamber having a substrate positioned therein; a vessel containing a precursor comprising one or more complexes of the formula: M{[(C(R 1 ) 2 ) n ]N(R 2 ) 2 }(R 3 )(R 4 ) wherein: M is a Group m metal; each R 1 , R 2 , R 3 , and R 4 group is independently H or a (C 1 -C 30 )hydrocarbon group wherein optionally R 3 and R 4 are joined to form a ring or rings with the metal and none of the other R groups are joined together to form ring systems; and n=1 to 6.
Claim 14
Dependent Claim
12 words
The system of claim 11 wherein the substrate is a silicon wafer.
Claim 15
Dependent Claim
18 words
The system of claim 11 wherein M is selected from the group consisting of Al, Ga, and In.
Claim 16
Dependent Claim
17 words
The system of claim 11 wherein at least one of R 3 and R 4 is H.
Claim 17
Dependent Claim
31 words
The system of claim 11 wherein each R 1 , R 2 , R 3 , and R 4 group is independently H or a (C 1 -C 8 )hydrocarbon group.
Claim 18
Dependent Claim
30 words
The system of claim 11 wherein each R 1 , R 2 , R 3 , and R group is independently H or a (C 1 -C 20 )hydrocarbon group.
Claim 19
Dependent Claim
31 words
The system of claim 11 wherein each R 1 , R 2 , R 3 , and R 4 group is independently H or a (C 1 -C 4 )alkyl moiety.
Claim 20
Dependent Claim
11 words
The system of claim 11 wherein the precursor is a liquid.
Claim 21
Dependent Claim
13 words
The system of claim 11 further comprising a source of a reaction gas.
Claim 22
Dependent Claim
19 words
The system of claim 11 wherein the precursor further comprises one or more compounds containing a Group V element.
Claim 23
Dependent Claim
109 words
A chemical vapor deposition system comprising: a deposition chamber having a substrate positioned therein; a vessel containing a precursor comprising one or more hydride complexes of the formula: M {[(C(R 1 ) 2 ) n ]N(R 2 ) 2 }(R 3 )(R 4 ) wherein: M is a Group ITI metal; each R 1 , R 2 , R 3 , and R 4 group is independently H or a (C 1 -C 30 ) hydrocarbon group, with the proviso that at least one of R 3 and R 4 is H and none of the R groups are joined together to form ring systems; and n=1 to 6.
Claim 24
Dependent Claim
109 words
A chemical vapor deposition system comprising: a deposition chamber having a substrate positioned therein; a vessel containing a precursor comprising one or more hydride complexes of the formula: M {[(C(R 1 ) 2 ) n ]N(R 2 ) 2 }(R 3 )(R 4 ) wherein: M is a Group ITI metal; each R 1 , R 2 , R 3 , and R 4 group is independently H or a (C 1 -C 30 ) hydrocarbon group, with the proviso that at least one of R 3 and R 4 is H and none of the R groups are joined together to form ring systems; and n=1 to 6.
Claim 25
Dependent Claim
9 words
The system of claim 21 wherein M is Al.
Claim 26
Dependent Claim
23 words
The system of claim 21 wherein R 1 , R 3 , and R 4 are each H, and R 2 is methyl.
Claim 27
Dependent Claim
23 words
The system of claim 22 wherein R 1 and R 3 are each H, and R 2 and R 4 are each methyl.
Claim 28
Dependent Claim
9 words
The system of claim 21 wherein M is Ga.
Claim 29
Dependent Claim
23 words
The system of claim 25 wherein R 1 , R 3 , and R 4 are each H, and R 2 is methyl.
Claim 30
Dependent Claim
23 words
The system of claim 25 wherein R 1 and R 3 are each H, and R 2 and R 4 are each methyl.
Claim 31
Dependent Claim
9 words
The system of claim 21 wherein M is In.
Claim 32
Dependent Claim
23 words
The system of claim 28 wherein R 1 , R 3 , and R 4 are each H, and R 2 is methyl.
Claim 33
Dependent Claim
23 words
The system of claim 28 wherein R 1 and R 3 are each H, and R 2 and R 4 are each methyl.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2005-09-02 | 2006-03-04 | 2006-09-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-09-02 | 2010-03-04 | 2010-09-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-09-02 | 2014-03-04 | 2014-09-03 | $7700.00 | Window Closed / Lapsed |