Patent US5796978A successfully refreshed from Google Patents.
US5923966A
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Laser processing method
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1995-07-20
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Granted: 1999-07-13
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Expires: 2015-07-20
Abstract
Abstract A laser processing apparatus provides a heating chamber, a chamber for laser light irradiation and a robot arm, wherein a temperature of a substrate on which a silicon film to be irradiated with laser light is formed is heated to 450 to 750° C. in the heating chamber followed by irradiating the silicon film with laser light so that a silicon film having a single crystal or a silicon film that can be regarded as the single crystal can be obtained.
Inventors
- 👤 Satoshi Teramoto
- 👤 Hisashi Ohtani
- 👤 Akiharu Miyanaga
- 👤 Toshiji Hamatani
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:19
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3808; H10P95/00; H10P95/90; B; B23; B23K; B23K3/00; B23K3/04; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3458; H10P14/3806; H10P14/381; H10P14/3816; H10P14/382; H10P14/40; H10P14/416; H10P72/00; H10P72/04; H10P72/0451; H10P72/0452; H10P72/0454; H10P72/0468; H10P72/0471; H10P72/0474; H10P72/0478; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/093; H10W20/097
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
73 words
A laser processing method comprising: a step of introducing into a semiconductor comprising amorphous silicon a metal element which promotes the crystallization of the amorphous silicon; a step of irradiating laser light to the semiconductor; and a step of heat annealing the semiconductor at a temperature of 500° C. or higher to reduce defect density, a step of heat annealing the semiconductor in an atmosphere comprising hydrogen to terminate internal defects with hydrogen.
Claim 2
Dependent Claim
73 words
A laser processing method comprising: a step of introducing into a semiconductor comprising amorphous silicon a metal element which promotes the crystallization of the amorphous silicon; a step of irradiating laser light to the semiconductor; and a step of heat annealing the semiconductor at a temperature of 500° C. or higher to reduce defect density, a step of heat annealing the semiconductor in an atmosphere comprising hydrogen to terminate internal defects with hydrogen.
Claim 3
Dependent Claim
28 words
The method of claim 1 wherein the crystallinity of the silicon film which is crystallized by the heat treating step is promoted by the laser light irradiating step.
Claim 4
Dependent Claim
39 words
The method of claim 1 wherein an element or a plurality of elements selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Zn, Ag and Au are used as the metal element.
Claim 5
Dependent Claim
83 words
A laser processing method comprising: a step of introducing into a semiconductor comprising amorphous silicon a metal element which promotes the crystallization of the amorphous silicon; a step of irradiating laser light to the semiconductor; and a step of heat annealing the semiconductor at a temperature of 500° C. or higher, a step of heat annealing the semiconductor in an atmosphere comprising hydrogen to contain hydrogen in the semiconductor, the concentration of hydrogen in the semiconductor being 10 20 cm -3 or lower.
Claim 6
Dependent Claim
83 words
A laser processing method comprising: a step of introducing into a semiconductor comprising amorphous silicon a metal element which promotes the crystallization of the amorphous silicon; a step of irradiating laser light to the semiconductor; and a step of heat annealing the semiconductor at a temperature of 500° C. or higher, a step of heat annealing the semiconductor in an atmosphere comprising hydrogen to contain hydrogen in the semiconductor, the concentration of hydrogen in the semiconductor being 10 20 cm -3 or lower.
Claim 7
Dependent Claim
28 words
The method of claim 4 wherein the crystallinity of the silicon film which is crystallized by the heat treating step is promoted by the laser light irradiating step.
Claim 8
Dependent Claim
39 words
The method of claim 4 wherein an element or a plurality of elements selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Zn, Ag and Au are used as the metal element.
Claim 9
Dependent Claim
99 words
A laser processing method comprising: a step of introducing into a semiconductor comprising amorphous silicon a metal element which promotes the crystallization of the amorphous silicon; a step of implanting an impurity ion into at least a part of the semiconductor; a step of irradiating laser light to the part into which the impurity ion is implanted by the implanting step; a step of heat annealing the crystallized semiconductor at a temperature of 500° C. or higher to reduce defect density, a step of heat annealing the semiconductor in an atmosphere comprising hydrogen to terminate internal defects with hydrogen.
Claim 10
Dependent Claim
99 words
A laser processing method comprising: a step of introducing into a semiconductor comprising amorphous silicon a metal element which promotes the crystallization of the amorphous silicon; a step of implanting an impurity ion into at least a part of the semiconductor; a step of irradiating laser light to the part into which the impurity ion is implanted by the implanting step; a step of heat annealing the crystallized semiconductor at a temperature of 500° C. or higher to reduce defect density, a step of heat annealing the semiconductor in an atmosphere comprising hydrogen to terminate internal defects with hydrogen.
Claim 11
Dependent Claim
28 words
The method of claim 7 wherein the crystallinity of the silicon film which is crystallized by the heat treating step is promoted by the laser light irradiating step.
Claim 12
Dependent Claim
39 words
The method of claim 7 wherein an element or a plurality of elements selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Zn, Ag and Au are used as the metal element.
Claim 13
Dependent Claim
109 words
A laser processing method comprising: introducing into a semiconductor comprising amorphous silicon a metal element which promotes the crystallization of the amorphous silicon; moving laser light having a linear beam configuration successively from the side of the semiconductor to another side of the semiconductor, to irradiate the laser light to a surface of the semiconductor, heat annealing the semiconductor at a temperature of 500° C. or higher after the laser light irradiation to reduce defect density, and a step of heat annealing the semiconductor in an atmosphere comprising hydrogen to terminate internal defects with hydrogen; wherein an area of the semiconductor irradiated with the laser light is successively crystallized.
Claim 14
Dependent Claim
109 words
A laser processing method comprising: introducing into a semiconductor comprising amorphous silicon a metal element which promotes the crystallization of the amorphous silicon; moving laser light having a linear beam configuration successively from the side of the semiconductor to another side of the semiconductor, to irradiate the laser light to a surface of the semiconductor, heat annealing the semiconductor at a temperature of 500° C. or higher after the laser light irradiation to reduce defect density, and a step of heat annealing the semiconductor in an atmosphere comprising hydrogen to terminate internal defects with hydrogen; wherein an area of the semiconductor irradiated with the laser light is successively crystallized.
Claim 15
Dependent Claim
39 words
The method of claim 10 wherein an element or a plurality of elements selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Zn, Ag and Au are used as the metal element.
Claim 16
Dependent Claim
21 words
The method of claim 10 wherein the metal element is selectively introduced into a predetermined area of the amorphous silicon film.
Claim 17
Dependent Claim
82 words
A laser processing method comprising the steps of: producing laser light of a linear cross section; and directing said laser light to a surface of a semiconductor comprising amorphous silicon while moving said laser light from one side of said semiconductor to an opposite side of said semiconductor in succession; and heat annealing the semiconductor at a temperature of 500° C. or higher to reduce defect density, heat annealing the semiconductor in an atmosphere comprising hydrogen to terminate internal defects with hydrogen.
Claim 18
Dependent Claim
82 words
A laser processing method comprising the steps of: producing laser light of a linear cross section; and directing said laser light to a surface of a semiconductor comprising amorphous silicon while moving said laser light from one side of said semiconductor to an opposite side of said semiconductor in succession; and heat annealing the semiconductor at a temperature of 500° C. or higher to reduce defect density, heat annealing the semiconductor in an atmosphere comprising hydrogen to terminate internal defects with hydrogen.
Claim 19
Dependent Claim
113 words
A laser processing method comprising: a step of introducing into a semiconductor comprising amorphous silicon a metal element which promotes the crystallization of the amorphous silicon; a step of implanting an impurity ion into at least a part of the semiconductor; a step of irradiating laser light to the part into which the impurity ion is implanted by the implanting step; a step of heat annealing the crystallized semiconductor at a temperature of 500° C. or higher to reduce defect density, a step of heat annealing the semiconductor in an atmosphere comprising hydrogen to contain hydrogen in the semiconductor, the concentration of hydrogen in the semiconductor being 10 20 cm -3 or lower.
Claim 20
Dependent Claim
113 words
A laser processing method comprising: a step of introducing into a semiconductor comprising amorphous silicon a metal element which promotes the crystallization of the amorphous silicon; a step of implanting an impurity ion into at least a part of the semiconductor; a step of irradiating laser light to the part into which the impurity ion is implanted by the implanting step; a step of heat annealing the crystallized semiconductor at a temperature of 500° C. or higher to reduce defect density, a step of heat annealing the semiconductor in an atmosphere comprising hydrogen to contain hydrogen in the semiconductor, the concentration of hydrogen in the semiconductor being 10 20 cm -3 or lower.
Claim 21
Dependent Claim
126 words
A laser processing method comprising: introducing into a semiconductor comprising amorphous silicon a metal element which promotes the crystallization of the amorphous silicon; moving laser light having a linear beam configuration successively from the side of the semiconductor to another side of the semiconductor, to irradiate the laser light to a surface of the amorphous silicon film semiconductor, heat annealing the semiconductor at a temperature of 500° C. or higher after the laser light irradiation to reduce defect density, and a step of heat annealing the semiconductor in an atmosphere comprising hydrogen to contain hydrogen in the semiconductor, the concentration of hydrogen in the semiconductor being 10 20 cm -3 or lower, wherein an area of the semiconductor irradiated with the laser light is successively crystallized.
Claim 22
Dependent Claim
126 words
A laser processing method comprising: introducing into a semiconductor comprising amorphous silicon a metal element which promotes the crystallization of the amorphous silicon; moving laser light having a linear beam configuration successively from the side of the semiconductor to another side of the semiconductor, to irradiate the laser light to a surface of the amorphous silicon film semiconductor, heat annealing the semiconductor at a temperature of 500° C. or higher after the laser light irradiation to reduce defect density, and a step of heat annealing the semiconductor in an atmosphere comprising hydrogen to contain hydrogen in the semiconductor, the concentration of hydrogen in the semiconductor being 10 20 cm -3 or lower, wherein an area of the semiconductor irradiated with the laser light is successively crystallized.
Claim 23
Dependent Claim
97 words
A laser processing method comprising the steps of: producing laser light of a linear cross section; and directing said laser light to a surface of a semiconductor comprising amorphous silicon while moving said laser light from one side of said semiconductor to an opposite side of said semiconductor in succession; and heating annealing the semiconductor at a temperature of 500° C. or higher to reduce defect density, and heat annealing the semiconductor in an atmosphere comprising hydrogen to contain hydrogen in the semiconductor, the concentration of hydrogen in the semiconductor being 10 20 cm -3 or lower.
Claim 24
Dependent Claim
97 words
A laser processing method comprising the steps of: producing laser light of a linear cross section; and directing said laser light to a surface of a semiconductor comprising amorphous silicon while moving said laser light from one side of said semiconductor to an opposite side of said semiconductor in succession; and heating annealing the semiconductor at a temperature of 500° C. or higher to reduce defect density, and heat annealing the semiconductor in an atmosphere comprising hydrogen to contain hydrogen in the semiconductor, the concentration of hydrogen in the semiconductor being 10 20 cm -3 or lower.
Claim 25
Dependent Claim
81 words
A laser processing method comprising: a step of irradiating laser light to a semiconductor comprising silicon and containing a metal element which promotes the crystallization of the amorphous silicon; a step of heat annealing the semiconductor at a temperature of 500° C. or higher to reduce defect density, and a step of heat annealing the semiconductor in an atmosphere comprising hydrogen to contain hydrogen in the semiconductor, the concentration of hydrogen in the semiconductor being 10 20 cm -3 or lower.
Claim 26
Dependent Claim
81 words
A laser processing method comprising: a step of irradiating laser light to a semiconductor comprising silicon and containing a metal element which promotes the crystallization of the amorphous silicon; a step of heat annealing the semiconductor at a temperature of 500° C. or higher to reduce defect density, and a step of heat annealing the semiconductor in an atmosphere comprising hydrogen to contain hydrogen in the semiconductor, the concentration of hydrogen in the semiconductor being 10 20 cm -3 or lower.
Claim 27
Dependent Claim
64 words
A laser processing method comprising: a step of irradiating laser light to a semiconductor comprising silicon and containing a metal element which promotes the crystallization of the amorphous silicon; a step of heat annealing the semiconductor at a temperature of 500° C. or higher to reduce defect density, and heat annealing the semiconductor in an atmosphere comprising hydrogen to terminate internal defect with hydrogen.
Claim 28
Dependent Claim
64 words
A laser processing method comprising: a step of irradiating laser light to a semiconductor comprising silicon and containing a metal element which promotes the crystallization of the amorphous silicon; a step of heat annealing the semiconductor at a temperature of 500° C. or higher to reduce defect density, and heat annealing the semiconductor in an atmosphere comprising hydrogen to terminate internal defect with hydrogen.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-07-12 | 2003-01-11 | 2003-07-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-07-12 | 2007-01-11 | 2007-07-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-07-12 | 2011-01-11 | 2011-07-13 | $7700.00 | Window Closed / Lapsed |