Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To effect monocrystalization at low temperature and to facilitate three-dimensional integration of semiconductors by a method wherein an amorphous semiconductor is deposited on an insulator and then annealed to be crystalized, and a laser or electron beam is irradiated onto the crystalized semiconductor film. CONSTITUTION:An amorphous semicondutor 12 is deposited on a ground vycor glass plate 11 in a given thickness with the electron beam evaporation process. This glass plate 11 is put in an electric furnace inclusing N2 passing therethrough and annealed at such temperature as where crystal nuclears can be produced naturally, thereby to effect crystalization. An energy beam 13 such as a laser or electron beam is continuously scanned and irradiated onto the surface of the semiconductor film thus crystalized. Then, the semiconductor film is monocrystalized at low temperature and an n type MOS transistor 14 or so is formed on the thus-monocrystalized thin film. By so doing, three-dimensional integration of semicondutors can be facilitated.

Inventors

• 👤 Kazumichi Omura
• 👤 大村　八通

Bibliographic Details