US6030491A
Expired / Lapsed
US
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Processing compositions and methods of using same
Assignee: Micron Technology Inc
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Filing: 1997-08-19
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Granted: 2000-02-29
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Expires: 2017-08-19
Abstract
Abstract Compositions and methods for processing (e.g., cleaning) substrates, such as semiconductor-based substrates, as well as processing equipment, include one or more compounds of Formula (I): ##STR1## wherein each R 1 , R 2 , R 3 , and R 4 is independently H or an organic group.
Inventors
- 👤 Brian A. Vaartstra
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 03:31
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/10; H10P70/15; C; C11; C11D; C11D7/00; C11D7/22; C11D7/26; C11D7/264; C11D7/32; C11D7/3209; C11D7/3236; C11D2111/00; C11D2111/10; C11D2111/14; C11D2111/22; H10P52/00; H10P52/40; H10P52/402; H10P95/00; H10P95/06; H10P95/062
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
51 words
A method of processing a substrate surface, the method comprising: providing a substrate surface; and processing the substrate surface with a processing composition comprising a compound of the formula: ##STR4## wherein each R 1 , R 2 , R 3 , and R 4 is independently H or an organic group.
Claim 2
Independent Claim
51 words
A method of processing a substrate surface, the method comprising: providing a substrate surface; and processing the substrate surface with a processing composition comprising a compound of the formula: ##STR4## wherein each R 1 , R 2 , R 3 , and R 4 is independently H or an organic group.
Claim 3
Dependent Claim
31 words
The method according to claim 1, wherein each R 1 , R 2 , R 3 , and R 4 is independently H or a (C 1 -C 20 )hydrocarbyl group.
Claim 4
Dependent Claim
58 words
The method according to claim 2, wherein at least one of R 1 , R 2 , R 3 , and R 4 is a hydrocarbyl group and at least one carbon atom in the hydrocarbyl group is replaced with one of a carbonyl group, a hydroxycarbyl group, an oxygen atom, a nitrogen atom, or an amninocarbyl group.
Claim 5
Dependent Claim
43 words
The method according to claim 2, wherein at least one of R 1 , R 2 , R 3 , and R 4 is a hydrocarbyl group and at least one hydrogen atom in the hydrocarbyl group is replaced with a fluorine atom.
Claim 6
Dependent Claim
27 words
The method according to claim 2, wherein at least one of R 1 , R 2 , R 3 , and R 4 is a methyl group.
Claim 7
Dependent Claim
24 words
The method according to claim 5, wherein R 2 is H and R 1 , R 3 , and R 4 are methyl groups.
Claim 8
Dependent Claim
20 words
The method according to claim 1, wherein the step of providing a substrate surface comprises providing a semiconductor-based substrate surface.
Claim 9
Dependent Claim
20 words
The method according to claim 7, wherein the step of processing the substrate surface comprises planarizing the semiconductor-based substrate surface.
Claim 10
Dependent Claim
20 words
The method according to claim 7, wherein the step of processing the substrate surface comprises cleaning the semiconductor-based substrate surface.
Claim 11
Dependent Claim
28 words
The method according to claim 1, wherein the compound of Formula I is present in the processing composition in an amount of less than about 50% by weight.
Claim 12
Dependent Claim
28 words
The method according to claim 10, wherein the compound of Formula I is present in the processing composition in an amount of less than about 10% by weight.
Claim 13
Dependent Claim
15 words
The method according to claim 1, wherein the processing composition further comprises an abrasive component.
Claim 14
Dependent Claim
15 words
The method according to claim 1, wherein the step of processing is a planarizing step.
Claim 15
Dependent Claim
15 words
The method according to claim 1, wherein the step of processing is a conditioning step.
Claim 16
Independent Claim
50 words
A method of cleaning a substrate surface, the method comprising: providing a substrate surface; and cleaning the substrate surface with a composition comprising a compound of the formula: ##STR5## wherein each R 1 , R 2 , R 3 , and R 4 is independently H or an organic group.
Claim 17
Independent Claim
50 words
A method of cleaning a substrate surface, the method comprising: providing a substrate surface; and cleaning the substrate surface with a composition comprising a compound of the formula: ##STR5## wherein each R 1 , R 2 , R 3 , and R 4 is independently H or an organic group.
Claim 18
Independent Claim
52 words
A method of processing a semiconductor-based substrate surface, the method comprising: planarizing the substrate surface; and cleaning the planarized substrate surface with a composition comprising a compound of the formula: ##STR6## wherein each R 1 , R 2 , R 3 , and R 4 is independently H or an organic group.
Claim 19
Independent Claim
52 words
A method of processing a semiconductor-based substrate surface, the method comprising: planarizing the substrate surface; and cleaning the planarized substrate surface with a composition comprising a compound of the formula: ##STR6## wherein each R 1 , R 2 , R 3 , and R 4 is independently H or an organic group.
Claim 20
Independent Claim
50 words
A method of cleaning planarization processing equipment, the method comprising: providing a planarization surface; and cleaning the planarization surface with a composition comprising a compound of the formula: ##STR7## wherein each R 1 , R 2 , R 3 , and R 4 is independently H or an organic group.
Claim 21
Independent Claim
50 words
A method of cleaning planarization processing equipment, the method comprising: providing a planarization surface; and cleaning the planarization surface with a composition comprising a compound of the formula: ##STR7## wherein each R 1 , R 2 , R 3 , and R 4 is independently H or an organic group.
Claim 22
Dependent Claim
18 words
The method according to claim 17, wherein the planarization surface is an abrasive pad or a polishing pad.
Claim 23
Dependent Claim
14 words
The method according to claim 17, wherein the composition further comprises an abrasive component.
Claim 24
Dependent Claim
18 words
The method according to claim 17, wherein the cleaning step is carried out during planarization of a substrate.
Claim 25
Independent Claim
44 words
A method of cleaning processing equipment, the method comprising cleaning the processing equipment with a composition comprising a compound of the formula: ##STR8## wherein each R 1 , R 2 , R 3 , and R 4 is independently H or an organic group.
Claim 26
Independent Claim
44 words
A method of cleaning processing equipment, the method comprising cleaning the processing equipment with a composition comprising a compound of the formula: ##STR8## wherein each R 1 , R 2 , R 3 , and R 4 is independently H or an organic group.
References Cited (Backward Citations)
US2857331A
Cited
US4544446A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2003-02-28 | 2003-08-30 | 2004-02-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-02-28 | 2007-08-30 | 2008-02-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-02-28 | 2011-08-30 | 2012-02-29 | $7700.00 | Window Closed / Lapsed |