US6664186B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of film deposition, and fabrication of structures
Assignee: GlobalFoundries US Inc
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Filing: 2000-09-29
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Granted: 2003-12-16
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Expires: 2020-09-29
Abstract
Abstract A method of fabricating aluminum oxide films utilizing aluminum alkoxide precursors is described. The aluminum oxide film is formed by (a) providing an aluminum alkoxide precursor that is dissolved, emulsified or suspended in a liquid; (b) providing a vapor generated from the aluminum alkoxide precursor; and (c) depositing an aluminum oxide film:on the substrate at a temperature greater than 500° C.
Inventors
- 👤 Alessandro C. Callegari
- 👤 Deborah Ann Neumayer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:30
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01342; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/403; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; H10D64/01304; H10D64/01316; H10D64/01344; H10D64/60; H10D64/66; H10D64/665; H10D64/68; H10D64/681; H10D64/685; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0181; H10D84/02; H10D84/03; H10D84/038; H10D84/201; H10D84/204; H10D84/212; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6516; H10P14/6529; H10D64/691; H10D64/693; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10P14/66; H10P14/668; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; H10P14/69396; H10P14/69397; Y; Y10; Y10T; Y10T428/00; Y10T428/24; Y10T428/24802; Y10T428/24917
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
81 words
A method for forming an aluminum oxide film on a substrate comprising: (a) providing an aluminum oxide precursor having the formula Al(OR) 3 wherein R is a ligand selected from linear or branched C 1-12 alkyls that is dissolved, emulsified or suspended in a liquid; (b) providing a vapor generated from the aluminum oxide precursor; and (c) depositing by chemical vapor deposition or atomic layer deposition an aluminum oxide film from said vaporized precursor at a temperature greater than 500° C.
Claim 2
Independent Claim
81 words
A method for forming an aluminum oxide film on a substrate comprising: (a) providing an aluminum oxide precursor having the formula Al(OR) 3 wherein R is a ligand selected from linear or branched C 1-12 alkyls that is dissolved, emulsified or suspended in a liquid; (b) providing a vapor generated from the aluminum oxide precursor; and (c) depositing by chemical vapor deposition or atomic layer deposition an aluminum oxide film from said vaporized precursor at a temperature greater than 500° C.
Claim 3
Dependent Claim
17 words
The method of claim 1 wherein an oxidizing reactant is introduced separately from said vaporized aluminum alkoxide.
Claim 4
Dependent Claim
26 words
The method of claim 2 wherein said oxidizing reactant is selected from the group consisting of oxygen, ozone, water, hydrogen peroxide, nitrous oxide, and combinations thereof.
Claim 5
Dependent Claim
40 words
The method of claim 1 wherein the aluminum alkoxide precursor includes aluminum alkoxide selected from the group consisting of aluminum iso-propoxide, aluminum sec-butoxide, aluminum ethoxide, aluminum neo-pentoxide, aluminum iso-butoxide, aluminum methoxide, aluminum propoxide, aluminum butoxide, aluminum tertiary-butoxide, and aluminum phenoxide.
Claim 6
Dependent Claim
27 words
The method of claim 1 wherein the liquid is selected from the group consisting of pentane, hexane, octane, heptane, nonane, decane, dodecane, iso-propanol, tetrahydrofuran, and butyl acetate.
Claim 7
Dependent Claim
49 words
The method of claim 1 wherein the liquid is selected from the group consisting aliphatic hydrocarbons, aromatic hydrocarbons, alcohols, ethers, aldehydes, ketones, acids, phenols, esters, amines, alkylnitriles, halgonated hydrocarbons, silylated hydrocarbons, thioethers, amines, cyanates, isocyanates, thiocyanates, silicone oils, nitroalkyls, alkylnitrates and/or mixtures of one or more of the above.
Claim 8
Dependent Claim
20 words
The method of claim 1 wherein the aluminum alkoxide of said precursor is aluminum iso-propoxide and the liquid is iso-propanol.
Claim 9
Dependent Claim
65 words
The method of claim 1 , wherein the vapor of the aluminum alkoxide precursor is obtained from the vaporization of a mixture of aluminum alkoxide and a liquid wherein the liquid vaporizes at a higher temperature than the aluminum alkoxide such that the liquid is not vaporized when the aluminum alkoxide is vaporized and the nonvaporized liquid is diverted from the chemical vapor deposition reactor.
Claim 10
Dependent Claim
49 words
The method of claim 1 further comprising introducing the vaporized aluminum alkoxide into a reactor with separate addition of an oxidant and an inert purge gas and depositing a film on said substrate by sequential introduction of alternating pulses of vaporized aluminum alkoxide(s), purge gas, co-reactant(s) and purge gas.
Claim 11
Dependent Claim
50 words
The method of claim 1 wherein the substrate is selected from the group consisting of semiconductor substrates, dielectrics, metals, organic substrates, glasses, metal oxides, and plastic polymeric substrates, Si-containing semiconductor substrates, silicon on insulator substrates, Si substrates, Ge substrates, SiGe substrates, GaAs substrates, InP substrates and mixtures or multilayers thereof.
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| 3.5 Years (Year 4) | 2006-12-15 | 2007-06-16 | 2007-12-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-12-15 | 2011-06-16 | 2011-12-16 | $3760.00 | Window Closed / Lapsed |
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