US5874379A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dielectric thin film and fabrication method thereof
Assignee: SK Hynix Inc
•
Filing: 1996-03-04
•
Granted: 1999-02-23
•
Expires: 2016-03-04
Abstract
Abstract An improved dielectric thin film and a capacitor with the same for a semiconductor and a fabrication method thereof capable of preventing leakage current in operation, which dielectric thin film includes (Ba, Sr)TiO 3 containing Ta, and which the capacitor includes a substrate; an interlayer insulation layer formed on a substrate, thereby exposing a predetermined portion of the substrate to the outside; a lower electrode formed on a predetermined portion of the interlayer insulation layer including the exposed portion of the substrate; a dielectric thin film consisting of (Ba, Sr)TiO 3 containing Ta and formed on the interlayer insulation film including the lower electrode; and an upper electrode formed on the dielectric thin film.
Inventors
- 👤 Seung-Ki Joo
- 👤 Jae-Hyun Joo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:27
CPC Classifications
H; H10; H10B; H10B12/00; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; C; C23; C23C; C23C14/00; C23C14/06; C23C14/08; C23C14/088; H01; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/06; H01G4/08; H01G4/12; H01G4/1209; H01G4/1218; H01G4/1227
Claims Analysis
Total Claims: 47
Claim 1
Independent Claim
13 words
A dielectric thin film consisting essentially of (Ba, Sr) TiO 3 and Ta.
Claim 2
Dependent Claim
13 words
A dielectric thin film consisting essentially of (Ba, Sr) TiO 3 and Ta.
Claim 3
Dependent Claim
30 words
The dielectric thin film of claim 1, wherein said Ta is present in a range of 2-10 atom-percent based on the total weight of the (Ba, Sr)TiO 3 and Ta.
Claim 4
Dependent Claim
31 words
The dielectric thin film of claim 2, wherein said Ta is present in an amount of 10 atom-percent based on the total weight of the (Ba, Sr)TiO 3 and said Ta.
Claim 5
Dependent Claim
30 words
The dielectric thin film of claim 2, wherein said Ta is present in a range of 2-3 atom-percent based on the total weight of the (Ba, Sr)TiO 3 and Ta.
Claim 6
Dependent Claim
30 words
The dielectric thin film of claim 4, wherein said Ta is present in an amount of 2 atom-percent based on the total weight of the (Ba, Sr)TiO 3 and Ta.
Claim 7
Dependent Claim
30 words
The dielectric thin film of claim 4, wherein said Ta is present in an amount of 3 atom-percent based on the total weight of the (Ba, Sr)TiO 3 and Ta.
Claim 8
Dependent Claim
21 words
The dielectric thin film of claim 1, wherein said dielectric thin film has a thickness in a range of 200-2000 Å.
Claim 9
Dependent Claim
21 words
The dielectric thin film of claim 7, wherein said dielectric thin film has a thickness in a range of 400-1000 Å.
Claim 10
Independent Claim
47 words
A method of forming a dielectric thin film consisting essentially of (Ba, Sr)TiO 3 and Ta, the method comprising the steps of: providing a lower layer; heating said lower layer; and concurrently sputtering Ba, Sr, Ti, and Ta onto said lower layer in a sputtering gas atmosphere.
Claim 11
Independent Claim
47 words
A method of forming a dielectric thin film consisting essentially of (Ba, Sr)TiO 3 and Ta, the method comprising the steps of: providing a lower layer; heating said lower layer; and concurrently sputtering Ba, Sr, Ti, and Ta onto said lower layer in a sputtering gas atmosphere.
Claim 12
Dependent Claim
16 words
The method of claim 9, wherein said lower layer is a storage electrode of a capacitor.
Claim 13
Dependent Claim
24 words
The method of claim 10, wherein said lower layer includes at least one of Pt, Ir, Ru, IrO 2 , and RuO 2 .
Claim 14
Dependent Claim
39 words
The method of claim 9, wherein said sputtering produces a ratio of Ta to (Ba, Sr)TiO 3 where Ta is in a range of 2-10 atom-percent based on the total weight of said (Ba, Sr)TiO 3 and said Ta.
Claim 15
Dependent Claim
16 words
The method of claim 9, wherein said sputtering gas includes oxygen, argon or a mixture thereof.
Claim 16
Dependent Claim
23 words
The method of claim 9, wherein said sputtering gas includes oxygen by 10-90 volume-percent based on the total weight of the sputtering gas.
Claim 17
Dependent Claim
16 words
The method of claim 9, wherein said dielectric thin film has a thickness of 200-2000 Å.
Claim 18
Dependent Claim
15 words
The method of claim 9, wherein said lower layer is heated to a temperature 400°-700°.
Claim 19
Dependent Claim
33 words
The method of claim 9, wherein said dielectric thin film is formed by using a target including (Ba, Sr)TiO 3 and Ta, or (Ba, Sr) TiO 3 and Ta 2 O 5 .
Claim 20
Dependent Claim
38 words
The method of claim 9, wherein said dielectric thin film is formed by concurrently sputtering a target of BaTiO 3 , a target of SrTiO 3 , and a target of Ta or Ta 2 O 5 .
Claim 21
Dependent Claim
30 words
The method of claim 9, wherein said dielectric thin film is formed by concurrently sputtering a target of Sr, Ti, and Ta and a target of Ba, Ti, and Ta.
Claim 22
Dependent Claim
32 words
The method of claim 9, wherein said dielectric thin film is formed by concurrently sputtering a target of Ba, Sr, Ti and a target of Ta or Ta 2 O 5 .
Claim 23
Dependent Claim
32 words
The method of claim 9, wherein said dielectric thin film is formed by concurrently sputtering a target of (Ba, Sr)TiO 3 and a target of Ta or Ta 2 O 5 .
Claim 24
Dependent Claim
29 words
The method of claim 9, wherein said dielectric thin film is formed by concurrently sputtering a target of BaTiO 3 and a target of Ta and SrTiO 3 .
Claim 25
Independent Claim
73 words
A method of forming a dielectric thin film consisting essentially of including (Ba, Sr)TiO 3 and Ta, the method comprising the steps of: providing a lower layer within a reaction chamber; heating said lower layer; introducing into said reaction chamber at least one reactive source gas of a metal-organic compound or a metal halogen compound each containing Ba, Sr, Ti, and Ta to form said dielectric thin film via chemical vapor deposition (CVD).
Claim 26
Independent Claim
73 words
A method of forming a dielectric thin film consisting essentially of including (Ba, Sr)TiO 3 and Ta, the method comprising the steps of: providing a lower layer within a reaction chamber; heating said lower layer; introducing into said reaction chamber at least one reactive source gas of a metal-organic compound or a metal halogen compound each containing Ba, Sr, Ti, and Ta to form said dielectric thin film via chemical vapor deposition (CVD).
Claim 27
Dependent Claim
16 words
The method of claim 23, wherein said lower layer is a storage electrode of a capacitor.
Claim 28
Dependent Claim
24 words
The method of claim 24, wherein said lower layer includes at least one of Pt, Ir, Ru, IrO 2 , and RuO 2 .
Claim 29
Dependent Claim
38 words
The method of claim 23, wherein said CVD produces a ratio of Ta to (Ba, Sr)TiO 3 where Ta is in a range of 2-10 atom-percent based on the total weight of said (Ba, Sr)TiO 3 and Ta.
Claim 30
Dependent Claim
17 words
The method of claim 23, wherein forms said dielectric thin film was a thickness of 200-2000 Å.
Claim 31
Dependent Claim
16 words
The method of claim 23, wherein said lower layer is heated to a temperature of 400°-7000°.
Claim 32
Dependent Claim
33 words
The method of claim 23, wherein said method introduces four metal-organic compound reactive source gases each containing Ba, Sr, Ti, and Ta or four metal halogen reactive source gases each containing the same.
Claim 33
Dependent Claim
51 words
The method of claim 23, wherein said dielectric thin film is formed by introducing a plurality of metal-organic compound reactive source gases each containing more than one element among Ba, Sr, Ti, and Ta or a plurality of metal halogen reactive source gases each containing the same into said reaction chamber.
Claim 34
Dependent Claim
27 words
The method of claim 23, wherein said method further comprises: providing energy generated from plasma, infrared rays, electron rays, ion rays, or X-rays into the reaction container.
Claim 35
Dependent Claim
17 words
The method of claim 31, wherein said lower layer is heated to a temperature of 100°-200° C.
Claim 36
Dependent Claim
36 words
The method of claim 12, wherein said ratio of said Ta to said (Ba, Sr)TiO 3 is in a range of 2-3 atom-percent based on the total weight of said (Ba, Sr)TiO 3 and said Ta.
Claim 37
Dependent Claim
36 words
The method of claim 33, wherein said ratio of said Ta to said (Ba, Sr)TiO 3 is in an amount of 2 atom-percent based on the total weight of said (Ba, Sr)TiO 3 and said Ta.
Claim 38
Dependent Claim
37 words
The method of claim 33, wherein wherein said ratio of said Ta to said (Ba, Sr)TiO 3 is in an amount of 3 atom-percent based on the total-weight of said (Ba, Sr) TiO 3 and said Ta.
Claim 39
Dependent Claim
19 words
The method of claim 15, wherein said dielectric thin film has a thickness in a range of 400-1000 Å.
Claim 40
Dependent Claim
36 words
The method of claim 26, wherein said ratio of said Ta to said (Ba, Sr)TiO 3 is in a range of 2-3 atom-percent based on the total weight of said (Ba, Sr)TiO 3 and said Ta.
Claim 41
Dependent Claim
37 words
The method of claim 27, wherein wherein said ratio of said Ta to said (Ba, Sr)TiO 3 is in an amount of 2 atom-percent based on the total weight of said (Ba, Sr)TiO 3 and said Ta.
Claim 42
Dependent Claim
38 words
The dielectric thin film of claim 37, wherein said ratio of said Ta to said (Ba, Sr)TiO 3 is in an amount of 3 atom-percent based on the total weight of said (Ba, Sr)TiO 3 and said Ta.
Claim 43
Dependent Claim
19 words
The method of claim 27, wherein said dielectric thin film has a thickness in a range of 400-1000 Å.
Claim 44
Dependent Claim
21 words
The method of claim 16, wherein said lower layer is heated to a temperature in a range of 550° C.-600° C.
Claim 45
Dependent Claim
17 words
The method of claim 41, wherein said lower layer is heated to a temperature of 550° C.
Claim 46
Dependent Claim
21 words
The method of claim 28, wherein said lower layer is heated to a temperature in a range of 550° C.-600° C.
Claim 47
Dependent Claim
17 words
The method of claim 43, wherein said lower layer is heated to a temperature of 550° C.
References Cited (Backward Citations)
US3033907A
Cited
US3819990A
Cited
US4642732A
Cited
US4957888A
Cited
US4987107A
Cited
US5051864A
Cited
US5086021A
Cited
US5441670A
Cited
US5314651A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-02-22 | 2002-08-24 | 2003-02-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-02-22 | 2006-08-24 | 2007-02-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-02-22 | 2010-08-24 | 2011-02-23 | $7700.00 | Window Closed / Lapsed |