Dielectric composition

Claim 1

A composition for forming a multilayer ceramic device having a thin dielectric layer with lower porosity and having a dissipation factor of 2.5% of less, an insulation resistance of 1000 ohm-Farads or more at 25° C. and 100 ohm-Farads or more at 125° C. and a temperature coefficient of capacitance of ±15% deviation or less within a temperature range of -55° C. to +125° C. and consisting essentially of an admixture of: (a) 97 to 99 wt % of a major component ceramic powder particle; and (b) 1 to 3 wt % of minor component additives selected from the group consisting essentially of the oxides of cerium, neodymium, samarium, lanthanum, niobium, tantalum, manganese, cobalt, nickel, magnesium or mixtures thereof, provided that, a primary cation ratio, CR, equals A/B and ranges from more than 0 to about 0.30 wherein A is a sum of atom % for a cation selected from Ce, Nd, Sm, La or mixtures thereof; and B is a sum of atom % for a cation selected from Nb, Ta, Mn, Co, Ni, Mg or mixtures thereof and, further provided, a secondary cation ratio, BR, equals B1/(B2+0.5 Mn) and ranges from 1.8 to 2.2 wherein B1 is a sum of atom % of an electron donor selected from Nb, Ta or mixtures thereof; and B2 is a sum of atom % for an electron acceptor selected from Co, Ni, Mg or mixtures thereof Mn is atom % of manganese.