US4861736A
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Semiconductive ceramic composition
Assignee: TDK Corp
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Filing: 1987-08-04
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Granted: 1989-08-29
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Expires: 2007-08-04
Abstract
Abstract A semiconductive ceramic composition for a reduction reoxidation type semiconductive ceramic capacitor capable of increasing capacitor, dielectric strength of the capacitor and improving temperature characteristics of the capacitor. The composition includes a BaTIO 3 base component and a minor component consisting of Nb and Ce. Nb and Ce are present in amounts of 0.2 to 3.0 mol % on Nb 2 O 5 and CeO 2 bases. Addition of Co and the like increases insulation resistance and D.C. breakdown voltage of the capacitor and further improves temperature characteristics of the capacitor.
Inventors
- 👤 Shuichi Ono
- 👤 Masahiro Yahagi
- 👤 Shuichi Itagaki
- 👤 Nobuaki Kikuchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:38
CPC Classifications
C; C04; C04B; C04B35/00; C04B35/01; C04B35/46; H; H01; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/06; H01G4/08; H01G4/12; H01G4/1272; C04B35/462; C04B35/465; C04B35/468; C04B35/4682; H01B; H01B1/00; H01B1/06; H01B1/08
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
71 words
A semiconductive ceramic composition consisting essentially of 99.6 to 94.4 wt. % BaTiO 3 , 0.24 to 3.4 wt. % of Nb 2 O 5 , and 0.15 to 2.2 wt. % CeO 2 , and, based on the total amount of BaTiO 3 , Nb 2 O 5 and CeO 2 , 0.3 to 0.8 wt. % Co 3 O 4 and 0.003 to 0.25 wt. % MnCO 3 .
Claim 2
Dependent Claim
71 words
A semiconductive ceramic composition consisting essentially of 99.6 to 94.4 wt. % BaTiO 3 , 0.24 to 3.4 wt. % of Nb 2 O 5 , and 0.15 to 2.2 wt. % CeO 2 , and, based on the total amount of BaTiO 3 , Nb 2 O 5 and CeO 2 , 0.3 to 0.8 wt. % Co 3 O 4 and 0.003 to 0.25 wt. % MnCO 3 .
Claim 3
Dependent Claim
21 words
The semiconductive ceramic composition of claim 1 which is compacted and sintered to cause a surface layer thereof to be insulated.
Claim 4
Dependent Claim
79 words
A semiconductive ceramic composition consisting essentially of 99.6 to 94.4 wt. % BaTiO 3 , 0.25 to 3.4 wt. % of Nb 2 O 5 , and 0.15 to 2.2 wt. % CeO 2 , and, based on the total amount of BaTiO 3 , Nb 2 O 5 and CeO 2 , 0.3 to 0.8 wt. % Co 3 O 4 , 0.003 to 0.25 wt. % MnCO 3 and 0.05 to 0.25 wt. % SiO 2 .
Claim 5
Dependent Claim
79 words
A semiconductive ceramic composition consisting essentially of 99.6 to 94.4 wt. % BaTiO 3 , 0.25 to 3.4 wt. % of Nb 2 O 5 , and 0.15 to 2.2 wt. % CeO 2 , and, based on the total amount of BaTiO 3 , Nb 2 O 5 and CeO 2 , 0.3 to 0.8 wt. % Co 3 O 4 , 0.003 to 0.25 wt. % MnCO 3 and 0.05 to 0.25 wt. % SiO 2 .
Claim 6
Dependent Claim
21 words
The semiconductive ceramic composition of claim 3 which is compacted and sintered to cause a surface layer thereof to be insulated.
Claim 7
Dependent Claim
88 words
A semiconductive ceramic composition consisting essentially of 99.6 to 94.4 wt. % BaTiO 3 , 0.25 to 3.4 wt. % of Nb 2 O 5 , and 0.15 to 2.2 wt. % CeO 2 , and, based on the total amount of BaTiO 3 , Nb 2 O 5 and CeO 2 , 0.3 to 0.8 wt. % Co 3 O 4 , 0.003 to 0.25 wt. % MnCO 3 , 0.05 to 0.25 wt. % SiO 2 , and 0.5 to 20.0 wt. % SrTiO 3 .
Claim 8
Dependent Claim
88 words
A semiconductive ceramic composition consisting essentially of 99.6 to 94.4 wt. % BaTiO 3 , 0.25 to 3.4 wt. % of Nb 2 O 5 , and 0.15 to 2.2 wt. % CeO 2 , and, based on the total amount of BaTiO 3 , Nb 2 O 5 and CeO 2 , 0.3 to 0.8 wt. % Co 3 O 4 , 0.003 to 0.25 wt. % MnCO 3 , 0.05 to 0.25 wt. % SiO 2 , and 0.5 to 20.0 wt. % SrTiO 3 .
Claim 9
Dependent Claim
21 words
The semiconductive ceramic composition of claim 5 which is compacted and sintered to cause a surface layer thereof to be insulated.
Claim 10
Dependent Claim
97 words
A semiconductive ceramic composition consisting essentially of 99.6 to 94.4 wt. % BaTiO 3 , 0.25 to 3.4 wt.5 of Nb 2 O 5 , and 0.15 to 2.2 wt. % CeO 2 , and, based on the total amount of BaTiO 3 , Nb 2 O 5 and CeO 2 , 0.3 to 0.8 wt. % Co 3 O 4 , 0.003 to 0.25 wt. % MnCO 3 , 0.05 to 0.25 wt. % SiO 2 , 0.5 to 20.0 wt. % SrTiO 3 , and 0.1 to 3.0 wt. % Y 2 O 3 .
Claim 11
Dependent Claim
97 words
A semiconductive ceramic composition consisting essentially of 99.6 to 94.4 wt. % BaTiO 3 , 0.25 to 3.4 wt.5 of Nb 2 O 5 , and 0.15 to 2.2 wt. % CeO 2 , and, based on the total amount of BaTiO 3 , Nb 2 O 5 and CeO 2 , 0.3 to 0.8 wt. % Co 3 O 4 , 0.003 to 0.25 wt. % MnCO 3 , 0.05 to 0.25 wt. % SiO 2 , 0.5 to 20.0 wt. % SrTiO 3 , and 0.1 to 3.0 wt. % Y 2 O 3 .
Claim 12
Dependent Claim
21 words
The semiconductive ceramic composition of claim 7 which is compacted and sintered to cause a surface layer thereof to be insulated.
Claim 13
Dependent Claim
88 words
A semiconductive ceramic composition consisting essentially of 99.6 to 84.4 wt. % BaTiO 3 , 0.25 to 3.5 wt. % of Nb 2 O 5 , and 0.15 to 2.2 wt. % CeO 2 , and, based on the total amount of BatiO 3 , Nb 2 O 5 and CeO 2 , 0.3 to 0.8 wt. % Co 3 O 4 , 0.003 to 0.25 wt. % MnCO 3 , 0.05 to 0.25 wt. % SiO 2 , and 0.2 to 15.0 wt. % CaTiO 3 .
Claim 14
Dependent Claim
88 words
A semiconductive ceramic composition consisting essentially of 99.6 to 84.4 wt. % BaTiO 3 , 0.25 to 3.5 wt. % of Nb 2 O 5 , and 0.15 to 2.2 wt. % CeO 2 , and, based on the total amount of BatiO 3 , Nb 2 O 5 and CeO 2 , 0.3 to 0.8 wt. % Co 3 O 4 , 0.003 to 0.25 wt. % MnCO 3 , 0.05 to 0.25 wt. % SiO 2 , and 0.2 to 15.0 wt. % CaTiO 3 .
Claim 15
Dependent Claim
21 words
The semiconductive ceramic composition of claim 9 which is compacted and sintered to cause a surface layer thereof to be insulated.
Claim 16
Dependent Claim
98 words
A semiconductive ceramic composition consisting essentially of 99.6 to 94.4 wt. % BaTiO 3 , 0.25 to 3.4 wt. % of Nb 2 O 5 , and 0.15 to 2.2 wt. % CeO 2 , and, based on the total amount of BaTiO 3 , Nb 2 O 5 and CeO 2 , 0.3 to 0.8 wt. % Co 3 O 4 , 0.003 to 0.25 wt. % MnCO 3 , 0.05 to 0.25 wt. % SiO 2 , 0.2 to 15.0 wt. % CaTiO 3 , and 0.1 to 3.0 wt. % Y 2 O 3 .
Claim 17
Dependent Claim
98 words
A semiconductive ceramic composition consisting essentially of 99.6 to 94.4 wt. % BaTiO 3 , 0.25 to 3.4 wt. % of Nb 2 O 5 , and 0.15 to 2.2 wt. % CeO 2 , and, based on the total amount of BaTiO 3 , Nb 2 O 5 and CeO 2 , 0.3 to 0.8 wt. % Co 3 O 4 , 0.003 to 0.25 wt. % MnCO 3 , 0.05 to 0.25 wt. % SiO 2 , 0.2 to 15.0 wt. % CaTiO 3 , and 0.1 to 3.0 wt. % Y 2 O 3 .
Claim 18
Dependent Claim
21 words
The semiconductive ceramic composition of claim 11 which is compacted and sintered to cause a surface layer thereof to be insulated.
Claim 19
Dependent Claim
89 words
A semiconductive ceramic composition consisting essentially of 99.6 to 94.4 wt. % BaTiO 3 , 0.25 to 3.4 wt. % of Nb 3 O 5 and 0.15 to 2.2 wt. % CeO 2 , and, based on the total amount of BaTiO 3 , Nb 2 O 5 and CeO 2 , 0.3 to 0.8 wt. % Co 3 O 4 , 0.003 to 0.25 wt. % MnCO 3 , 0.05 to 0.25 wt. % SiO 2 , and 0.1 to 3.0 wt. % Y 2 O 3 .
Claim 20
Dependent Claim
89 words
A semiconductive ceramic composition consisting essentially of 99.6 to 94.4 wt. % BaTiO 3 , 0.25 to 3.4 wt. % of Nb 3 O 5 and 0.15 to 2.2 wt. % CeO 2 , and, based on the total amount of BaTiO 3 , Nb 2 O 5 and CeO 2 , 0.3 to 0.8 wt. % Co 3 O 4 , 0.003 to 0.25 wt. % MnCO 3 , 0.05 to 0.25 wt. % SiO 2 , and 0.1 to 3.0 wt. % Y 2 O 3 .
Claim 21
Dependent Claim
21 words
The semiconductive ceramic composition of claim 13 which is compacted and sintered to cause a surface layer thereof to be insulated.
References Cited (Backward Citations)
FR1592107A
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US4014707A
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JPS5270398A
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JPS57128903A
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JPS57208003A
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JPS5815078A
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JPS6199207A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-08-28 | 1993-02-27 | 1993-08-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-08-28 | 1997-02-27 | 1997-08-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-08-28 | 2001-02-27 | 2001-08-29 | $7700.00 | Window Closed / Lapsed |