US5583205A
Expired / Lapsed
US
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Metalorganic chemical vapor deposition method for depositing f-series metal or nitrogen and metal amides for use in mocvd
Assignee: Florida State University
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Filing: 1993-11-12
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Granted: 1996-12-10
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Expires: 2013-11-12
Abstract
Abstract A metalorganic chemical vapor deposition (MOCVD) method for depositing an F-series metal onto a semiconductor or other substrate or for incorporating nitrogen as a p-type dopant in Group II-VI semiconductor materials. The MOCVD method utilizes an F-series metal amide or zinc amide composition as the source compound for the F-series metal or nitrogen, respectively. Novel erbium amide and zinc amide compositions are disclosed along with methods for preparing the metal amide compositions.
Inventors
- 👤 William S. Rees, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:59
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/06; C23C16/18; C07; C07F; C07F3/00; C07F3/003; C07F5/00; C07F5/003; C07F7/00; C07F7/02; C07F7/08; C07F7/10; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/02
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
106 words
A zinc amide having a vapor pressure of at least 1×10 -5 torr at 200 ° C., the zinc amide having the formula ##STR13## wherein R 1 , R 2 , R' 1 and R' 2 are independently isopropyl, n-propyl, cyclohexyl, alkenyl, aryl, or di- or trialkyl-substituted silyl, or together with the nitrogen atom to which they are attached comprise a heterocyclic ring, provided that if R 1 , R 2 , R' 1 and R' 2 are each trialkyl-substituted silyl, at least one of R 1 , R 2 , R' 1 or R' 2 have at least one alkyl group containing a β hydrogen.
Claim 2
Dependent Claim
106 words
A zinc amide having a vapor pressure of at least 1×10 -5 torr at 200 ° C., the zinc amide having the formula ##STR13## wherein R 1 , R 2 , R' 1 and R' 2 are independently isopropyl, n-propyl, cyclohexyl, alkenyl, aryl, or di- or trialkyl-substituted silyl, or together with the nitrogen atom to which they are attached comprise a heterocyclic ring, provided that if R 1 , R 2 , R' 1 and R' 2 are each trialkyl-substituted silyl, at least one of R 1 , R 2 , R' 1 or R' 2 have at least one alkyl group containing a β hydrogen.
Claim 3
Dependent Claim
125 words
A zinc amide having a vapor pressure of at least 1×10 31 5 torr at 200 ° C., the zinc amide having the formula ##STR14## wherein R 1 , R 2 , R' 1 and R' 2 are independently alkyl, alkenyl, aryl, or di- or trialkyl-substituted silyl, or together with the nitrogen atom to which they are attached comprise a heterocyclic ring, provided that if R 1 , R 2 , R' 1 and R' 2 are each trialkyl-substituted silyl, at least one of R 1 , R 2 , R' 1 or R' 2 have at least one alkyl group containing a β hydrogen. R 1 , R 2 , R' 1 and R' 2 being selected such that the zinc amide is heteroleptic.
Claim 4
Dependent Claim
125 words
A zinc amide having a vapor pressure of at least 1×10 31 5 torr at 200 ° C., the zinc amide having the formula ##STR14## wherein R 1 , R 2 , R' 1 and R' 2 are independently alkyl, alkenyl, aryl, or di- or trialkyl-substituted silyl, or together with the nitrogen atom to which they are attached comprise a heterocyclic ring, provided that if R 1 , R 2 , R' 1 and R' 2 are each trialkyl-substituted silyl, at least one of R 1 , R 2 , R' 1 or R' 2 have at least one alkyl group containing a β hydrogen. R 1 , R 2 , R' 1 and R' 2 being selected such that the zinc amide is heteroleptic.
Claim 5
Dependent Claim
16 words
A zinc amide as set forth in claim 1 selected from the group consisting of ##STR15##
Claim 6
Dependent Claim
61 words
An erbium amide having a vapor pressure of at least 1×10 -5 torr at 100° C., the erbium amide having a formula selected from the group consisting of ##STR16## wherein Q is a monodentate or oligodentate ligand other than an amide ligand, and x is an integer≧1, and y is an integer≧0, such that erbium is substantially inert to further ligation.
Claim 7
Dependent Claim
61 words
An erbium amide having a vapor pressure of at least 1×10 -5 torr at 100° C., the erbium amide having a formula selected from the group consisting of ##STR16## wherein Q is a monodentate or oligodentate ligand other than an amide ligand, and x is an integer≧1, and y is an integer≧0, such that erbium is substantially inert to further ligation.
References Cited (Backward Citations)
EP0563557A2
Cited
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