US6979370B2
Expired / Lapsed
US
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Methods, complexes, and system for forming metal-containing films
Assignee: Micron Technology Inc
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Filing: 2002-12-19
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Granted: 2005-12-27
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Expires: 2022-12-19
Abstract
Abstract A method of forming a film on a substrate using Group IIIA metal complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.
Inventors
- 👤 Brian A. Vaartstra
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:54
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/301; C07; C07F; C07F5/00; C07F5/06; C07F5/061; C07F5/065; C07F5/066; C23C16/06; C23C16/18; H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
116 words
A chemical vapor deposition system comprising: a deposition chamber having a substrate positioned there; a vessel containing a precursor comprising one or more hydride complexes of the formulas: wherein: M is a Group IIIA metal; each R 1 , R 2 , R 3 , R 4 , and R 5 group is independently H or a (C 1 –C 30 )organic group, wherein none of the R groups are joined together to form ring systems, at least one of R 3 and R 4 is H, and R 5 is H; and n=1 to 6; and a source of an inert carrier gas for transferring the complex or complexes to the chemical vapor deposition chamber.
Claim 2
Dependent Claim
116 words
A chemical vapor deposition system comprising: a deposition chamber having a substrate positioned there; a vessel containing a precursor comprising one or more hydride complexes of the formulas: wherein: M is a Group IIIA metal; each R 1 , R 2 , R 3 , R 4 , and R 5 group is independently H or a (C 1 –C 30 )organic group, wherein none of the R groups are joined together to form ring systems, at least one of R 3 and R 4 is H, and R 5 is H; and n=1 to 6; and a source of an inert carrier gas for transferring the complex or complexes to the chemical vapor deposition chamber.
Claim 3
Dependent Claim
117 words
A chemical vapor deposition system comprising: a deposition chamber having a substrate positioned therein; a vessel containing a liquid precursor comprising one or more hydride complexes of the formulas: wherein: M is a Group IIIA metal; each R 1 , R 2 , R 3 , R 4 , and R 5 group is independently H or a (C 1 –C 30 )organic group, wherein none of the R groups are joined together to form ring systems, at least one of R 3 and R 4 is H, and R 5 is H; and n=1 to 6; and a source of an inert carrier gas for transferring the complex or complexes to the chemical vapor deposition chamber.
Claim 4
Dependent Claim
117 words
A chemical vapor deposition system comprising: a deposition chamber having a substrate positioned therein; a vessel containing a liquid precursor comprising one or more hydride complexes of the formulas: wherein: M is a Group IIIA metal; each R 1 , R 2 , R 3 , R 4 , and R 5 group is independently H or a (C 1 –C 30 )organic group, wherein none of the R groups are joined together to form ring systems, at least one of R 3 and R 4 is H, and R 5 is H; and n=1 to 6; and a source of an inert carrier gas for transferring the complex or complexes to the chemical vapor deposition chamber.
Claim 5
Dependent Claim
117 words
A chemical vapor deposition system comprising: a deposition chamber having a semiconductor substrate positioned therein; a vessel containing a precursor comprising one or more hydride complexes of the formulas: wherein: M is a Group IIIA metal; each R 1 , R 2 , R 3 , R 4 , and R 5 group is independently H or a (C 1 –C 30 )organic group, wherein none of the R groups are joined together to form ring systems, at least one of R 3 and R 4 is H, and R 5 is H; and n=1 to 6; and a source of an inert carrier gas for transferring the complex or complexes to the chemical vapor deposition chamber.
Claim 6
Dependent Claim
117 words
A chemical vapor deposition system comprising: a deposition chamber having a semiconductor substrate positioned therein; a vessel containing a precursor comprising one or more hydride complexes of the formulas: wherein: M is a Group IIIA metal; each R 1 , R 2 , R 3 , R 4 , and R 5 group is independently H or a (C 1 –C 30 )organic group, wherein none of the R groups are joined together to form ring systems, at least one of R 3 and R 4 is H, and R 5 is H; and n=1 to 6; and a source of an inert carrier gas for transferring the complex or complexes to the chemical vapor deposition chamber.
Claim 7
Dependent Claim
119 words
A chemical vapor deposition system comprising: a deposition chamber having a semiconductor substrate positioned therein; a vessel containing a liquid precursor comprising one or more hydride complexes of the formulas: wherein: M is a Group IIIA metal; each R 1 , R 2 , R 3 , R 4 , and R 5 group is independently H or a (C 1 –C 30 ) organic group, wherein none of the R groups are joined together to form ring systems, at least one of R 3 and R 4 is H, and R 5 is H; and n=1 to 6; and a source of an inert carrier gas for transferring the complex or complexes to the chemical vapor deposition chamber.
Claim 8
Dependent Claim
119 words
A chemical vapor deposition system comprising: a deposition chamber having a semiconductor substrate positioned therein; a vessel containing a liquid precursor comprising one or more hydride complexes of the formulas: wherein: M is a Group IIIA metal; each R 1 , R 2 , R 3 , R 4 , and R 5 group is independently H or a (C 1 –C 30 ) organic group, wherein none of the R groups are joined together to form ring systems, at least one of R 3 and R 4 is H, and R 5 is H; and n=1 to 6; and a source of an inert carrier gas for transferring the complex or complexes to the chemical vapor deposition chamber.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2008-12-26 | 2009-06-27 | 2009-12-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2012-12-26 | 2013-06-27 | 2013-12-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2016-12-26 | 2017-06-27 | 2017-12-27 | $7700.00 | Window Closed / Lapsed |