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US4766092A
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Method of growing heteroepitaxial InP on Si using Sn substrate implantation
Assignee: Hitachi Ltd
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Filing: 1986-12-02
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Granted: 1988-08-23
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Expires: 2006-12-02
Abstract
Abstract When a semiconductor device is produced by growing epitaxially a compound semiconductor layer on a Si or Ge substrate, lattice matching between the substrate crystal and the compound semiconductor layer to be formed on the substrate can be improved by ion-implanting an ion species element, which increases the lattice constant of Si or Ge as the substrate, into the Si or Ge substrate in order to increase its lattice constant. In comparison with conventional semiconductor devices using Si or Ge into which ion implantation is not made, the semiconductor device produced by the method described above can improve remarkably its characteristics. In the case of a semiconductor laser device, for example, its threshold value drops drastically and its service life can be prolonged remarkably.
Inventors
- 👤 Takao Kuroda
- 👤 Kenji Hiruma
- 👤 Hiroyoshi Matsumura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 00:17
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; H10P14/36; H10P30/208; H01; H01S; H01S2301/00; H01S2301/17; H01S2301/173; H01S2304/00; H01S2304/04; H01S5/00; H01S5/02; H01S5/0206; H01S5/021; H01S5/04; H01S5/042; H01S5/0421; H01S5/0422; H01S5/30; H01S5/305; H01S5/3054; Y; Y10; Y10S; Y10S148/00; Y10S148/072; Y10S148/097; Y10S148/119; Y10S438/00; Y10S438/933; Y10S438/938
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
43 words
A method of producing a semiconductor device comprising the steps of: ion-implanting an ion species of Sn, into a substrate of Si crystal; and growing epitaxially a layer of compound semiconductor material of single crystal InP on the ion-implanted surface of said substrate.
Claim 2
Independent Claim
43 words
A method of producing a semiconductor device comprising the steps of: ion-implanting an ion species of Sn, into a substrate of Si crystal; and growing epitaxially a layer of compound semiconductor material of single crystal InP on the ion-implanted surface of said substrate.
Claim 3
Dependent Claim
34 words
The method of producing a semiconductor device as defined in claim 1, wherein said ion species element is ion-implanted from the surface of said substrate crystal in a depth of 0.5 to 5 μm.
Claim 4
Dependent Claim
22 words
The method of producing a semiconductor device as defined in claim 1, wherein the compound semiconductor layer is epitaxially grown by MOCVD.
Claim 5
Dependent Claim
22 words
The method of producing a semiconductor device as defined in claim 1, wherein the compound semiconductor layer is epitaxially grown by MBE.
Claim 6
Dependent Claim
47 words
The method of producing a semiconductor device as defined in claim 1, wherein the ion-implanting is performed so as to change the lattice constant of the substrate of Si crystal to be less than 3% different than the lattice constant of said layer of compound semiconductor material.
Claim 7
Dependent Claim
34 words
The method of producing a semiconductor device as defined in claim 5, wherein said ion species element is ion-implanted from the surface of said substrate crystal in a depth of 0.5 to 5 μm.
Claim 8
Dependent Claim
28 words
The method of producing a semiconductor device as defined in claim 6, wherein the impurity concentration of the ion-implanted impurity is made substantially uniform in the depth direction.
Claim 9
Dependent Claim
47 words
The method of producing a semiconductor device as defined in claim 6, wherein the ion-implanting is performed so as to change the lattice constant of the substrate of Si crystal to be less than 1% different than the lattice constant of said layer of compound semiconductor material.
Claim 10
Independent Claim
53 words
A method of producing a semiconductor device comprising the steps of: ion-implanting an ion species of Sn into a substrate of Si crystal; and growing epitaxially a layer of compound semiconductor material selected from the group consisting of single crystal InP and InP system mixed crystal on the ion-implanted surface of said substrate.
Claim 11
Independent Claim
53 words
A method of producing a semiconductor device comprising the steps of: ion-implanting an ion species of Sn into a substrate of Si crystal; and growing epitaxially a layer of compound semiconductor material selected from the group consisting of single crystal InP and InP system mixed crystal on the ion-implanted surface of said substrate.
Claim 12
Dependent Claim
24 words
The method of producing a semiconductor device as defined in claim 9, wherein said layer of compound semiconductor material is InP system mixed crystal.
Claim 13
Dependent Claim
22 words
The method of producing a semiconductor device as defined in claim 10, wherein the compound semiconductor layer is epitaxially grown by MOCVD.
Claim 14
Dependent Claim
22 words
The method of producing a semiconductor device as defined in claim 10, wherein the compound semiconductor layer is epitaxially grown by MBE.
Claim 15
Dependent Claim
47 words
The method of producing a semiconductor device as defined in claim 10, wherein the ion-implanting is performed so as to change the lattice constant of the substrate of Si crystal to be less than 3% different than the lattice constant of said layer of compound semiconductor material.
Claim 16
Dependent Claim
34 words
The method of producing a semiconductor device as defined in claim 13, wherein said ion species element is ion-implanted from the surface of said substrate crystal in a depth of 0.5 to 5 μm.
Claim 17
Dependent Claim
28 words
The method of producing a semiconductor device as defined in claim 14, wherein the impurity concentration of the ion-implanted impurity is made substantially uniform in the depth direction.
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| 3.5 Years (Year 4) | 1991-08-23 | 1992-02-22 | 1992-08-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-08-23 | 1996-02-22 | 1996-08-23 | $3760.00 | Window Closed / Lapsed |
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