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US3793093A Expired / Lapsed US ⏱️ 0.0 years remaining

Method for producing a semiconductor device having a very small deviation in lattice constant

Assignee: HANDOTAI KENKYU SHINKOKAI KAWAUCHI JA
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Filing: 1973-01-12
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Granted: 1974-02-19
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Expires: 1993-01-12
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Abstract

Abstract A method for producing a semiconductor device using a semiconductor, in which at least two kinds of impurities having different atomic radiuses from one another and from that of the semiconductor are doped in the semiconductor for providing one conduction band therein, so that the lattice constant of the semiconductor is substantially constant.

Inventors

  • 👤 J Nishizawa
  • 👤 I Sasaki

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-26 21:07
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/85; H10D62/854; H10D62/83; H10D62/834; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/018; Y10S148/04; Y10S148/056; Y10S148/061; Y10S148/065; Y10S148/097; Y10S438/00; Y10S438/938

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 25 words
A method for producing a semiconductor device according to claim 1 in which antimony and phosphorus are doped as the impurities in a germanium semiconductor.
Claim 2
Dependent Claim 24 words
A method for producing a semiconductor device according to claim 1 in which the impurities have the same conductivity type as the conduction band.
Claim 3
Dependent Claim 25 words
A method for producing a semiconductor device according to claim 3, in which antimony and phosphorus are dopes as the impurities in a germanium semiconductor.
Claim 4
Dependent Claim 24 words
A method for producing a semiconductor device according to claim 1, in which the impurities have the conductivity type different from the conduction band.
Claim 5
Dependent Claim 28 words
A method for producing a semiconductor device according to claim 1, in which tellurium and selenium are doped as the impurities in a compound semiconductor of gallium arsenide.

References Cited (Backward Citations)

US3249831A Cited
US3496118A Cited
US3445302A Cited
US3632431A Cited
US3663320A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1977-02-18 1977-08-20 1978-02-19 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1981-02-18 1981-08-20 1982-02-19 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1985-02-18 1985-08-20 1986-02-19 $7700.00 Window Closed / Lapsed

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