US3632431A
Expired / Lapsed
US
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Method of crystallizing a binary semiconductor compound
Assignee: US Philips Corp
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Filing: 1968-10-21
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Granted: 1972-01-04
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Expires: 1988-10-21
Abstract
Abstract A method of crystallizing a binary semiconductor compound from a liquid solution of the compound in one of its components, e.g. gallium arsenide in gallium. A small quantity of an element of the same group of the periodic system of the elements as that component, but having a larger atomic radius, e.g. indium, is added to the solution. The binary compound can be epitaxially deposited on the surface of a semiconductor body. Instead of gallium arsenide, indium arsenide may be crystallized using thallium as an addition. Moreover, a crystalline body can be obtained by drawing. The added component can be introduced in a vapor phase or through a porous wall. Crystallization may also take place by a zone melting process.
Inventors
- 👤 Elie Andre
- 👤 Jean-Marc Le Duc
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 13:19
CPC Classifications
C; C30; C30B; C30B11/00; C30B11/04; C30B11/06; C30B19/00; C30B19/06; C30B19/061; C30B19/10; C30B19/106; H; H10; H10P; H10P95/00; Y; Y10; Y10S; Y10S117/00; Y10S117/912; Y10S148/00; Y10S148/049; Y10S148/107
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
18 words
A method as claimed in claim 1, wherein the semiconductor compound is epitaxially provided on a semiconductor body.
Claim 2
Dependent Claim
18 words
A method as claimed in claim 2, characterized in that the semiconductor body consists of the semiconductor compound.
Claim 3
Dependent Claim
20 words
A method as claimed in claim 1, wherein the starting material is a liquid solution of gallium arsenide in gallium.
Claim 4
Dependent Claim
27 words
A method as claimed in claim 4, wherein the concentration of the gallium arsenide with respect to the gallium lies between 3 and 20 percent by weight.
Claim 5
Dependent Claim
27 words
A method as claimed in claim 5, wherein the concentration of the gallium arsenide with respect to the gallium lies between 5 and 10 percent by weight.
Claim 6
Dependent Claim
13 words
A method as claimed in claim 4, wherein indium is the added element.
Claim 7
Dependent Claim
26 words
A method as claimed in claim 7, wherein maximally 5 percent by weight is used as the concentration of the indium with respect to the gallium.
Claim 8
Dependent Claim
24 words
A method as claimed in claim 8, wherein the indium concentration with respect to the gallium lies between 1 and 3 percent by weight.
Claim 9
Dependent Claim
60 words
A method as claimed in claim 9, wherein the solution is prepared in one part of a vessel and heated at a temperature which lies above the saturation temperature and the semiconductor body is placed in another part of the vessel, after which the vessel is tilted, in such manner that the solution contacts the semiconductor body, and is cooled.
Claim 10
Dependent Claim
22 words
A method as claimed in claim 10, wherein the temperature of the solution lies 20* to 50* C. above the saturation temperature.
Claim 11
Dependent Claim
20 words
A method as claimed in claim 11, wherein the rate of cooling lies between 0.1* and 50* C. per minute.
Claim 12
Dependent Claim
25 words
A method as claimed in any of the claim 9, wherein a crystalline body is obtained from the semiconductor compound by drawing from the solution.
Claim 13
Dependent Claim
53 words
A method as claimed in any of the claim 9, wherein during crystallization the concentration in the melt of the component other than the solvent is maintained by bringing the other component at a location in the solution where a temperature prevails which is higher than at the location where crystallization takes place.
Claim 14
Dependent Claim
20 words
A method as claimed in claim 14, wherein the other component is introduced in the solution via a vapor phase.
Claim 15
Dependent Claim
26 words
A method as claimed in claim 15, wherein the other component is intRoduced into a crystallization vessel, in which crystallization takes place, through a porous wall.
Claim 16
Dependent Claim
20 words
A method as claimed in any of the claim 9, wherein the crystallization takes place in a zone melting process.
References Cited (Backward Citations)
US3198606A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-01-03 | 1975-07-05 | 1976-01-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-01-03 | 1979-07-05 | 1980-01-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-01-03 | 1983-07-05 | 1984-01-04 | $7700.00 | Window Closed / Lapsed |