US6562491B1
Expired / Lapsed
US
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Preparation of composite high-K dielectrics
Assignee: GlobalFoundries US Inc
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Filing: 2001-10-15
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Granted: 2003-05-13
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Expires: 2021-10-15
Abstract
Abstract A semiconductor device and a method of making the semiconductor device having a composite dielectric layer including steps of providing a semiconductor substrate; depositing on the semiconductor substrate alternating sub-layers of a high-K dielectric material and a dielectric precursor material to form a composite layer having at least two sub-layers of at least one of the high-K dielectric material and the dielectric precursor material. The semiconductor device may be subjected to annealing at an elevated temperature to form a composite dielectric layer from the composite layer.
Inventors
- 👤 Joong Jeon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:02
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01342; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/691; H10D64/693; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
56 words
A semiconductor device having a composite layer, comprising: a semiconductor substrate; and alternating sub-layers of a high-K dielectric material and a dielectric precursor material, the sub-layers forming a composite layer on the semiconductor substrate, the composite layer having at least two sub-layers of at least one of the high-K dielectric material and the dielectric precursor material.
Claim 2
Dependent Claim
56 words
A semiconductor device having a composite layer, comprising: a semiconductor substrate; and alternating sub-layers of a high-K dielectric material and a dielectric precursor material, the sub-layers forming a composite layer on the semiconductor substrate, the composite layer having at least two sub-layers of at least one of the high-K dielectric material and the dielectric precursor material.
Claim 3
Dependent Claim
18 words
The semiconductor device of claim 1 , wherein the dielectric precursor material comprises amorphous silicon or polycrystalline silicon.
Claim 4
Dependent Claim
78 words
The semiconductor device of claim 1 , wherein the high-K dielectric material comprises at least one of hafnium oxide, zirconium oxide, tantalum oxide, titanium dioxide, cesium oxide, lanthanum oxide, tungsten oxide, yttrium oxide, bismuth silicon oxide (Bi 4 Si 2 O 12 ), barium strontium oxide (Ba 1−x Sr x O 3 ), BST (Ba 1−x Sr x TiO 3 ), PZN (PbZn x Nb 1−x O 3 ) and PST (PbSc x Ta 1−x O 3 ).
Claim 5
Dependent Claim
20 words
The semiconductor device of claim 1 , wherein a first sub-layer on the semiconductor substrate is the high-K dielectric material.
Claim 6
Dependent Claim
44 words
The semiconductor device of claim 1 , wherein the high-K dielectric material is hafnium oxide and the dielectric precursor material is aluminum, zirconium, yttrium, titanium, tantalum, lanthanum, cesium, tungsten, magnesium, zinc, barium, strontium, bismuth, niobium, scandium, amorphous silicon or polysilicon, or a combination thereof.
Claim 7
Dependent Claim
44 words
The semiconductor device of claim 1 , wherein the high-K dielectric material is zirconium oxide and the dielectric precursor material is aluminum, hafnium, yttrium, titanium, tantalum, lanthanum, cesium, tungsten, magnesium, zinc, barium, strontium, bismuth, niobium, scandium, amorphous silicon or polysilicon, or a combination thereof.
Claim 8
Dependent Claim
31 words
The semiconductor device of claim 1 , wherein the dielectric precursor material is convertible to a new dielectric material when the composite layer is subjected to annealing at an elevated temperature.
Claim 9
Dependent Claim
33 words
The semiconductor device of claim 7 , wherein the new dielectric material is capable of reaction or combination with the high-K material to form a reaction product comprising a metal composite dielectric material.
Claim 10
Dependent Claim
85 words
A semiconductor device having a composite layer, comprising: a semiconductor substrate; and alternating sub-layers of a high-K dielectric material and a dielectric precursor material, the sub-layers forming a composite layer on the semiconductor substrate, the composite layer having at least two sub-layers of at least one of the high-K dielectric material and the dielectric precursor material, wherein the dielectric precursor material is aluminum, zirconium, yttrium, titanium, tantalum, lanthanum, cesium, tungsten, magnesium, zinc, barium, strontium, bismuth, niobium, scandium, amorphous silicon or polysilicon, or a combination thereof.
Claim 11
Dependent Claim
85 words
A semiconductor device having a composite layer, comprising: a semiconductor substrate; and alternating sub-layers of a high-K dielectric material and a dielectric precursor material, the sub-layers forming a composite layer on the semiconductor substrate, the composite layer having at least two sub-layers of at least one of the high-K dielectric material and the dielectric precursor material, wherein the dielectric precursor material is aluminum, zirconium, yttrium, titanium, tantalum, lanthanum, cesium, tungsten, magnesium, zinc, barium, strontium, bismuth, niobium, scandium, amorphous silicon or polysilicon, or a combination thereof.
Claim 12
Dependent Claim
78 words
The semiconductor device of claim 9 , wherein the high-K dielectric material comprises at least one of hafnium oxide, zirconium oxide, tantalum oxide, titanium dioxide, cesium oxide, lanthanum oxide, tungsten oxide, yttrium oxide, bismuth silicon oxide (Bi 4 Si 2 O 12 ), barium strontium oxide (Ba 1−x Sr x O 3 ), BST (Ba 1−x Sr x TiO 3 ), PZN (PbZn x Nb 1−x O 3 ) and PST (PbSc x Ta 1−x O 3 ).
Claim 13
Dependent Claim
20 words
The semiconductor device of claim 9 , wherein a first sub-layer on the semiconductor substrate is the high-K dielectric material.
Claim 14
Dependent Claim
31 words
The semiconductor device of claim 9 , wherein the dielectric precursor material is convertible to a new dielectric material when the composite layer is subjected to annealing at an elevated temperature.
Claim 15
Dependent Claim
33 words
The semiconductor device of claim 12 , wherein the new dielectric material is capable of reaction or combination with the high-K material to form a reaction product comprising a metal composite dielectric material.
Claim 16
Dependent Claim
85 words
A semiconductor device having a composite layer, comprising: a semiconductor substrate; and alternating sub-layers of a high-K dielectric material and a dielectric precursor material, the sub-layers forming a composite layer on the semiconductor substrate, the composite layer having at least two sub-layers of at least one of the high-K dielectric material and the dielectric precursor material, wherein the high-K dielectric material is hafnium oxide or zirconium oxide, or a combination thereof and the dielectric precursor material is amorphous silicon or polysilicon, or a combination thereof.
Claim 17
Dependent Claim
85 words
A semiconductor device having a composite layer, comprising: a semiconductor substrate; and alternating sub-layers of a high-K dielectric material and a dielectric precursor material, the sub-layers forming a composite layer on the semiconductor substrate, the composite layer having at least two sub-layers of at least one of the high-K dielectric material and the dielectric precursor material, wherein the high-K dielectric material is hafnium oxide or zirconium oxide, or a combination thereof and the dielectric precursor material is amorphous silicon or polysilicon, or a combination thereof.
Claim 18
Dependent Claim
20 words
The semiconductor device of claim 14 , wherein a first sub-layer on the semiconductor substrate is the high-K dielectric material.
Claim 19
Dependent Claim
31 words
The semiconductor device of claim 14 , wherein the dielectric precursor material is convertible to a new dielectric material when the composite layer is subjected to annealing at an elevated temperature.
Claim 20
Dependent Claim
33 words
The semiconductor device of claim 14 , wherein the new dielectric material is capable of reaction or combination with the high-K material to form a reaction product comprising a metal composite dielectric material.
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